SEMIX452GB126HDS_06 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX452GB126HDS_06 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总4页 (文件大小：1334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 452GB126HDs
ꢋ
ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
Values
Units
IGBT
ꢔꢕꢖꢉ
*&++
/0+ ꢗ11+ꢘ
4++
ꢔ
"
,
,
ꢋꢍ ꢏ &' ꢗ.+ꢘ (ꢕ
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ꢕ
"
ꢕ23
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6 &+
ꢔ
ꢋꢛ7) ꢗꢋꢈꢑꢄ
ꢘ
ꢋ8%ꢖ2"ꢋ,89 : ꢋꢈꢑꢄ
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(ꢕ
ꢔꢊꢈꢂꢒ
/+++
ꢔ
Inverse diode
®
SEMiX 2s
,
ꢋꢍ ꢏ &' ꢗ.+ꢘ (ꢕ
1'+ ꢗ&/+ꢘ
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Trench IGBT Modules
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ꢏ &'(ꢕ) ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
SEMiX 452GB126HDs
SEMiX 452GAL126HDs
SEMiX 452GAR126HDs
Preliminary Data
ꢔ5ꢖꢗꢑꢎꢘ
ꢔ5ꢖ ꢏ ꢔꢕꢖ) ,ꢕ ꢏ *& ꢃ"
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').
4)'
&
ꢔ
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ꢔ
,
ꢔ5ꢖ ꢏ +) ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ) ꢋ7 ꢏ &' ꢗ*&'ꢘ (ꢕ
ꢕꢖꢉ
ꢔꢕꢖꢗꢋ8ꢘ
ꢌꢕꢖ
ꢋ7 ꢏ &' ꢗ*&'ꢘ (ꢕ
* ꢗ+)@ꢘ
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1)& ꢗ/)'ꢘ
ꢔ5ꢖ ꢏ *' ꢔ) ꢋ7 ꢏ &' ꢗ*&'ꢘ (ꢕ
&)& ꢗ1)0ꢘ
ꢃA
ꢔꢕꢖꢗꢈꢐꢑꢘ
,ꢕꢆꢂꢃ ꢏ 1++ ") ꢔ5ꢖ ꢏ *' ꢔ)
*)0 ꢗ&ꢘ
&)*' ꢗ&)/'ꢘ
ꢔ
ꢋ7 ꢏ &' ꢗ*&'ꢘ (ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
Features
ꢕꢊꢅꢈ
ꢕꢂꢅꢈ
ꢕꢌꢅꢈ
Cꢕꢖ
ꢇꢆ#ꢅꢌ ꢂꢒꢒꢂꢙꢊꢆꢄ ꢍꢂꢆ#ꢊꢑꢊꢂꢆꢈ
&&
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*
ꢆ>
ꢆ>
ꢆ>
ꢆꢁ
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢔ5ꢖ ꢏ +) ꢔꢕꢖ ꢏ &' ꢔ) ꢏ * 3ꢁB
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
*.
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
2ꢕꢕD=ꢖꢖD
ꢑꢅꢌꢃꢊꢆꢐꢒ;ꢍꢎꢊꢚ) ꢋꢍꢏ &' ꢗ*&'ꢘ (ꢕ
ꢃA
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
ꢑ#ꢗꢂꢆꢘEꢑꢌ
ꢔꢕꢕ ꢏ 4++ ꢔ) ,ꢕꢆꢂꢃ ꢏ 1++ "
ꢔ5ꢖ ꢏ 6 *' ꢔ
&.' E 4'
ꢆꢈ
ꢆꢈ
ꢑ#ꢗꢂ ꢘEꢑ
41' E *1+
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ ꢙꢅꢒ#ꢅꢌꢈ
ꢖꢂꢆ ꢗꢖꢂ
ꢘ
25ꢂꢆ ꢏ 25ꢂ ꢏ & A) ꢋ7 ꢏ *&' (ꢕ
1' ꢗ/'ꢘ
ꢃF
ꢀ
ꢀ
ꢀ
Inverse diode
ꢔ> ꢏ ꢔꢖꢕ
,>ꢆꢂꢃ ꢏ 1++ "? ꢔ5ꢖ ꢏ + ꢔ? ꢋ7 ꢏ &' ꢗ*&'ꢘ
*)4 ꢗ*)4ꢘ
*). ꢗ*).ꢘ
*)* ꢗ+)@ꢘ
ꢔ
(ꢕ) ꢍꢎꢊꢚ ꢒꢅꢛꢅꢒ
ꢔꢗꢋ8ꢘ
ꢌꢋ
ꢋ7 ꢏ &' ꢗ*&'ꢘ (ꢕ
ꢋ7 ꢏ &' ꢗ*&'ꢘ (ꢕ
* ꢗ+).ꢘ
& ꢗ&)0ꢘ
ꢗ10'ꢘ
ꢗ0'ꢘ
ꢔ
ꢃA
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223
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ꢖꢌꢌ
#ꢊE#ꢑ ꢏ 4&++ "EHꢈ
Hꢕ
ꢔ5ꢖ ꢏ ;*' ꢔ
ꢗ11ꢘ
ꢃF
Thermal characteristics
2ꢑꢎꢗ7;ꢍꢘ
ꢚꢅꢌ ,5Iꢋ
+)+.
+)*.
JEK
JEK
JEK
2ꢑꢎꢗ7;ꢍꢘL
2ꢑꢎꢗ7;ꢍꢘ>L
ꢚꢅꢌ ,ꢆꢛꢅꢌꢈꢅ Lꢊꢂ#ꢅ
ꢚꢅꢌ >KL
2ꢑꢎꢗꢍ;ꢈꢘ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
+)+/'
JEK
Temperature sensor
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ꢋꢍ ꢏ &' (ꢕ
' 6'M
1/&+
NO
J
I&'E.'
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Mechanical data
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' E'
9ꢃ
ꢄ
ꢙ
&'+
GB
GAL
GAR
1
06-04-2006 GES
© by SEMIKRON
SEMiX 452GB126HDs
Fig. 1 output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
2
06-04-2006 GES
© by SEMIKRON
SEMiX 452GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 Transient thermal impedance of FWD
Fig. 12 Typ. CAL diode peak reverse recovery current
Fig. 9 Transient thermal impedance of IGBT
Fig. 11 CAL diode forward characteristic
3
06-04-2006 GES
© by SEMIKRON
SEMiX 452GB126HDs
Fig. 13 Typ. CAL diode recovered charge
5I
%ꢊꢆꢂꢇꢑ ꢉꢖ3ꢊS &
ꢕꢐꢈꢅ ꢉꢖ3ꢊS &
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
06-04-2006 GES
© by SEMIKRON
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