SEMIX452GB126HDS_07 [SEMIKRON]
Trench IGBT Modules; 沟道IGBT模块
| 型号： | SEMIX452GB126HDS_07 |
| 厂家： | 
SEMIKRON INTERNATIONAL |
| 描述： | Trench IGBT Modules |
| 文件： | 总5页 (文件大小：1106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMiX 452GB126HDs
ꢋ
ꢏ ()*ꢕ- ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Absolute Maximum Ratings
ꢍꢐꢈꢅ
Symbol Conditions
IGBT
Values
Units
ꢔꢕꢖꢉ
ꢋ. ꢏ () *ꢕ
'(00
2))
ꢔ
"
"
1ꢕ
ꢋ. ꢏ ')0 *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ 30 *ꢕ
4(0
1ꢕ56
ꢔ8ꢖꢉ
ꢑꢚꢈꢍ
1ꢕ56ꢏ(+1ꢕꢆꢂꢃ
700
9 (0
'0
"
ꢔ
®
ꢔꢕꢕ ꢏ 700 ꢔ: ꢔ8ꢖ ; (0 ꢔ: ꢋ. ꢏ '() *ꢕ
ꢔꢕꢖꢉ < '(00 ꢔ
=ꢈ
SEMiX 2s
Inverse Diode
Trench IGBT Modules
1>
ꢋ. ꢏ ')0 *ꢕ
ꢋꢍ ꢏ () *ꢕ
ꢋꢍ ꢏ 30 *ꢕ
4?)
(@0
"
"
1>56
1>ꢉ6
1>56ꢏ(+1>ꢆꢂꢃ
700
"
"
SEMiX 452GB126HDs
SEMiX 452GAL126HDs
SEMiX 452GAR126HDs
Preliminary Data
ꢑꢚ ꢏ '0 ꢃꢈ: ꢈꢊꢆ,
ꢋ. ꢏ () *ꢕ
'?00
Module
1ꢑꢗ56ꢉꢘ
700
"
*ꢕ
*ꢕ
ꢔ
ꢋꢛ.
A 20 ,,, B ')0
A 20 ,,, B '()
2000
ꢋꢈꢑꢄ
ꢔꢊꢈꢂꢒ
"ꢕ- ' ꢃꢊꢆ,
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
ꢀ
ꢀ
ꢀ
ꢋ
ꢏ ()*ꢕ- ꢇꢆꢒꢅꢈꢈ ꢂꢑꢎꢅꢌꢙꢊꢈꢅ ꢈꢚꢅꢍꢊ ꢊꢅ#
Characteristics
Symbol Conditions
IGBT
ꢍꢐꢈꢅ
min.
typ.
max. Units
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢔ8ꢖꢗꢑꢎꢘ
ꢔ8ꢖ ꢏ ꢔꢕꢖ- 1ꢕ ꢏ '( ꢃ"
)
)-3
7-)
ꢔ
ꢀ
1ꢕꢖꢉ
ꢔ8ꢖ ꢏ 0 ꢔ- ꢔꢕꢖ ꢏ ꢔꢕꢖꢉ
ꢋ. ꢏ () *ꢕ
ꢋ. ꢏ () *ꢕ
0-4
'-(
ꢃ"
ꢔ
Typical Applications
ꢔꢕꢖ0
'
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢀ
ꢀ
ꢀ
ꢋ. ꢏ '() *ꢕ
ꢋ. ꢏ ()*ꢕ
0-?
(-4
4-@
'-@
(
'-'
ꢔ
ꢌꢕꢖ
ꢔ8ꢖ ꢏ ') ꢔ
4-(
ꢃC
ꢃC
ꢔ
ꢋ. ꢏ '()*ꢕ
2-)
Remarks
ꢔꢕꢖꢗꢈꢐꢑꢘ
1ꢕꢆꢂꢃ ꢏ 400 "- ꢔ8ꢖ ꢏ ') ꢔ ꢋ. ꢏ ()*ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ. ꢏ '()*ꢕꢍꢎꢊꢚꢒꢅꢛ,
(-')
(-2)
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
ꢀ
ꢔ
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢕ
ꢕꢊꢅꢈ
('-)
'-'4
ꢆ>
ꢆ>
ꢕꢂꢅꢈ
ꢔꢕꢖ ꢏ ()- ꢔ8ꢖ ꢏ 0 ꢔ
ꢔ8ꢖ ꢏ A3 ,,, B')ꢔ
ꢏ ' 6ꢁD
ꢕꢌꢅꢈ
E8
0-?3
ꢆ>
ꢆꢕ
(200
ꢑ#ꢗꢂꢆꢘ
ꢑꢌ
ꢖꢂꢆ
ꢑ#ꢗꢂ ꢘ
(30
7)
ꢆꢈ
ꢆꢈ
ꢃF
ꢆꢈ
ꢆꢈ
58ꢂꢆ ꢏ ( C
58ꢂ ꢏ ( C
ꢔꢕꢕ ꢏ 700ꢔ
1ꢕꢆꢂꢃꢏ 400"
ꢋ. ꢏ '() *ꢕ
4)
740
'40
ꢑ
ꢖꢂ
2)
ꢃF
5ꢑꢎꢗ.Aꢍꢘ
ꢚꢅꢌ 18Gꢋ
0-034
HI&
GB
GAL
GAR
1
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max. Units
ꢔ> ꢏ ꢔꢖꢕ
1>ꢆꢂꢃ ꢏ 400 ": ꢔ8ꢖ ꢏ 0 ꢔ
ꢋ. ꢏ () *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ. ꢏ '() *ꢕꢍꢎꢊꢚꢒꢅꢛ,
ꢋ. ꢏ () *ꢕ
'-7
'-7
'
'-3
'-3
'-'
0-?
(-4
4
ꢔ
ꢔ
ꢔ>0
ꢔ
ꢋ. ꢏ '() *ꢕ
ꢋ. ꢏ () *ꢕ
0-3
(
ꢔ
ꢌ>
ꢃC
ꢃC
ꢋ. ꢏ '() *ꢕ
ꢋ. ꢏ '() *ꢕ
(-@
®
1556
Eꢌꢌ
1>ꢆꢂꢃ ꢏ 400 "
4@)
@)
"
SEMiX 2s
#ꢊI#ꢑ ꢏ 7(00 "I=ꢈ
=ꢕ
ꢖꢌꢌ
ꢔ8ꢖ ꢏ A') ꢔ: ꢔꢕꢕ ꢏ 700 ꢔ
ꢚꢅꢌ #ꢊꢂ#ꢅ
44
ꢃF
Trench IGBT Modules
5ꢑꢎꢗ.AꢍꢘJ
0-')
HI&
Module
Kꢕꢖ
'3
0-@
'
ꢆꢁ
ꢃC
ꢃC
SEMiX 452GB126HDs
SEMiX 452GAL126HDs
SEMiX 452GAR126HDs
Preliminary Data
5ꢕꢕLBꢖꢖL
ꢌꢅꢈ,- ꢑꢅꢌꢃꢊꢆꢐꢒAꢍꢎꢊꢚ
ꢋꢍꢐꢈꢅꢏ () *ꢕ
ꢋꢍꢐꢈꢅꢏ '() *ꢕ
5ꢑꢎꢗꢍAꢈꢘ
6ꢈ
ꢚꢅꢌ ꢃꢂ#ꢇꢒꢅ
0-02)
HI&
Nꢃ
Nꢃ
ꢄ
ꢑꢂ ꢎꢅꢐꢑ ꢈꢊꢆM ꢗ6)ꢘ
ꢑꢂ ꢑꢅꢌꢃꢊꢆꢐꢒꢈ ꢗ67ꢘ
4
)
)
6ꢑ
(-)
ꢙ
()0
Features
ꢁꢂꢃꢂꢄꢅꢆꢅꢂꢇꢈ ꢉꢊ
ꢋꢌꢅꢆꢍꢎ ꢏ ꢋꢌꢅꢆꢍꢎꢄꢐꢑꢅ ꢑꢅꢍꢎꢆꢂꢒꢂꢄꢓ
Temperature sensor
ꢀ
ꢀ
ꢀ
5'00
ꢋꢍꢏ'00*ꢕ ꢗ5()ꢏ) MCꢘ
5ꢗꢋꢘꢏ5'00ꢅ+ꢚPG'00I'()ꢗ'IꢋA'Iꢋ'00ꢘQ:
ꢋPHQ: G
0-2?49)O
4))09(O
MC
H
G'00I'()
ꢔ
ꢙꢊꢑꢎ ꢚꢂꢈꢊꢑꢊꢛꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌꢅ
ꢕꢖꢗꢈꢐꢑꢘ
ꢍꢂꢅ ꢊꢍꢊꢅꢆꢑ
ꢁꢊꢄꢎ ꢈꢎꢂꢌꢑ ꢍꢊꢌꢍꢇꢊꢑ ꢍꢐꢚꢐ!ꢊꢒꢊꢑꢓ
ꢀ
Typical Applications
"ꢕ ꢊꢆꢛꢅꢌꢑꢅꢌ #ꢌꢊꢛꢅꢈ
$%ꢉ
ꢖꢒꢅꢍꢑꢌꢂꢆꢊꢍ &ꢅꢒ#ꢊꢆꢄ
ꢀ
ꢀ
ꢀ
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Remarks
ꢕꢐꢈꢅ ꢑꢅꢃꢚꢅꢌꢐꢑꢇꢌ ꢒꢊꢃꢊꢑꢅ# ꢑꢂ
ꢋ ꢏ'()*ꢕ ꢃꢐ+,
ꢀ
ꢕ
GB
GAL
GAR
2
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 5 Typ. transfer characteristic
3
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
19-04-2007 SCH
© by SEMIKRON
SEMiX 452GB126HDs
ꢕꢐꢈꢅ ꢉꢖ6ꢊR (ꢈ
%ꢊꢆꢂꢇꢑ
8G
%ꢊꢆꢂꢇꢑ
8"K
%ꢊꢆꢂꢇꢑ
8"5
5
19-04-2007 SCH
© by SEMIKRON
相关型号：
©2020 ICPDF网 联系我们和版权申明