ST2N2222 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | ST2N2222 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2N2222 / 2N2222A
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group
according to its DC current gain. As complementary
type the PNP transistor ST 2N2907 and ST
2N2907A are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
O
Absolute Maximum Ratings (Ta = 25 C)
Symbol
Value
Unit
ST 2N2222 ST 2N2222A
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
60
30
5
75
40
6
V
V
V
600
625
mA
mW
Power Dissipation
Ptot
Tj
O
C
Junction Temperature
Storage Temperature Range
150
O
C
TS
-55 to +150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005
ST 2N2222 / 2N2222A
O
Characteristics at Tamb=25 C
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
hFE
hFE
hFE
hFE
hFE
hFE
35
50
-
-
-
-
-
-
-
-
-
-
-
-
-
at IC=0.1mA, VCE=10V
at IC=1mA, VCE=10V
at IC=10mA, VCE=10V
at IC=150mA, VCE=10V
at IC=500mA, VCE=10V
-
75
-
100
30
300
ST 2N2222
-
-
ST 2N2222A
40
Collector Cutoff Current
at VCB=50V
ST 2N2222
ICBO
ICBO
-
-
-
-
0.01
0.01
µA
µA
ST 2N2222A
at VCB=60V
Collector Base Breakdown Voltage
at IC=10µA
V(BR)CBO
V(BR)CBO
60
75
-
-
-
-
V
V
ST 2N2222
ST 2N2222A
Collector Emitter Breakdown Voltage
V(BR)CEO
V(BR)CEO
30
40
-
-
-
-
V
V
at IC=10mA
ST 2N2222
ST 2N2222A
Emitter Base Breakdown Voltage
at IE=10µA
V(BR)EBO
V(BR)EBO
5
6
-
-
-
-
V
V
ST 2N2222
ST 2N2222A
Collector Saturation Voltage
at IC=150mA, IB=15mA
VCE(sat)
VCE(sat)
VCE(sat)
VCE(sat)
-
-
-
-
-
-
-
-
0.4
0.3
1.6
1
V
V
V
V
ST 2N2222
ST 2N2222A
ST 2N2222
ST 2N2222A
at IC=500mA, IB=50mA
Base Saturation Voltage
at IC=150mA, IB=15mA
VBE(sat)
VBE(sat)
VBE(sat)
VBE(sat)
-
0.6
-
-
-
-
-
1.3
1.2
2.6
2.0
V
V
V
V
ST 2N2222
ST 2N2222A
ST 2N2222
ST 2N2222A
at IC=500mA, IB=50mA
Gain Bandwidth Product
-
fT
250
-
-
-
-
MHz
pF
at IC=20mA, VCE=20V, f=100MHz
Collector Output Capacitance
at VCB=10V, f=1MHz
Cob
Cib
-
-
8
Input Capacitance
30
pF
at VCB=0.5V, f=1MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005
ST 2N2222 / 2N2222A
Figure 1. DC Current Gain
1000
700
500
TJ=125oC
300
200
25oC
100
70
50
-55oC
30
20
VCE=1.0V
VCE=10V
10
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200 300
700 1.0 K
500
IC, COLLECTOR CURENT (mA)
Figure 2. Collector Saturetion Region
1.0
0.8
0.6
0.4
TJ= 25oC
10mA
500mA
IC=1.0mA
150mA
0.2
0
0.005 0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
IB, BASE CURENT (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005
ST 2N2222 / 2N2222A
Figure 3. Capacitances
Figure 4. Current-Gain Bandwidth Product
30
500
VCE=20V
TJ= 25oC
20
300
200
Ceb
10
7.0
5.0
100
70
Ccb
3.0
2.0
50
0.1
0.20.3 0.5 0.71.0 2.0 3.0 5.07.010 20 30 50
REVERSE VOLTAGE (VOLTS)
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 05/10/2005
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