ST2N3704 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
| 型号： | ST2N3704 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2N3704
NPN Silicon Epitaxial Planar Transistor
for general purpose applications.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC)
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
50
30
5
V
V
600
mA
mW
℃
Power Dissipation
Ptot
625
Junction Temperature
Storage Temperature Range
Tj
150
TS
-55 to +150
℃
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/04/2005
ST 2N3704
Characteristics at Tamb=25℃
Symbol
*hFE
Min.
100
50
30
5
Typ.
Max.
300
-
Unit
-
DC Current Gain
at VCE=2V, IC=50mA
-
-
-
-
-
-
-
-
-
-
Collector Base Breakdown Voltage
at IC=100μA
BVCBO
*BVCEO
BVEBO
ICBO
V
Collector Emitter Breakdown Voltage
at IC=10mA
-
V
Emitter Base Breakdown Voltage
at IE=100μA
-
V
Collector Cutoff Current
at VCB=20V
-
100
100
12
0.6
1
nA
nA
pF
V
Emitter Cutoff Current
at VBE=3V
IEBO
-
Output Capacitance
Cob
-
at VCB=10V, f=1MHz
Collector Emitter Saturation Voltage
at IC=100mA, IB=5mA
Base Emitter On Voltage
at VCE=2V, IC=100mA
Current Gain Bandwidth Product
at VCE=2V, IC=50mA, f=20MHz
*VCE(sat)
*VBE(on)
fT
-
0.5
100
V
-
MHz
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/04/2005
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