ST2N3416 [SEMTECH]
NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管![ST2N3416](http://pdffile.icpdf.com/pdf1/p00142/img/icpdf/ST2N3_785125_icpdf.jpg)
型号: | ST2N3416 |
厂家: | ![]() |
描述: | NPN Silicon Epitaxial Planar Transistor |
文件: | 总2页 (文件大小:191K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
ST 2N3416 / 2N3417
NPN Silicon Epitaxial Planar Transistor
General Purpose Amplifier
For use as general purpose amplifiers and switches
requiring collector current to 300 mA.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings* (Ta = 25℃)
Symbol
VCEO
VCBO
VEBO
IC
Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
50
V
V
50
5
500
V
mA
mW
mW/ OC
OC
Total Device Dissipation
Derate above 25 OC
625
Ptot
5
Junction Temperature
Storage Temperature Range
Tj
150
TS
-55 to +150
OC
*These ratings are limiting values above which the serviceability of semiconductor device may be impaired.
Notes:
1) These ratings are based on a maximum junction temperature of 150℃
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/07/2003
ST 2N3416 / 2N3417
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE=4.5V, IC=2mA
ST 2N3416
ST 2N3417
hFE
hFE
75
-
-
225
540
-
-
180
Small Signal Current Gain
at VCE=4.5V, IC=2mA, f =1kHz
ST 2N3416
ST 2N3417
hfe
hfe
75
-
-
-
-
-
-
180
Collector Cutoff Current
at VCB=25V
ICBO
ICBO
-
-
-
-
100
15
nA
at VCB=18V, Ta=100℃
μA
Emitter Cutoff Current
at VEB=5V
IEBO
-
-
-
-
-
-
100
0.3
1.3
-
nA
V
Collector Saturation Voltage
at IC=50mA, IB=3mA
Base Saturation Voltage
at IC=50mA, IB=3mA
VCE(sat)
VBE(sat)
V(BR)CEO
V(BR)CBO
-
0.6
50
50
V
Collector Emitter Breakdown Voltage*
at IC=10Ma
V
Collector Base Breakdown Voltage
at IC=10μA
-
V
Emitter Base Breakdown Voltage
at IE=10μA
V(BR)EBO
RthA
5
-
-
-
-
-
V
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
200
83.3
OC /W
OC /W
RthC
-
μs
*Pulse Test : Pulse width≦300 , Duty Cycle≦2%.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/07/2003
相关型号:
©2020 ICPDF网 联系我们和版权申明