ST2N3416 [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
ST2N3416
型号: ST2N3416
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管
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ST 2N3416 / 2N3417  
NPN Silicon Epitaxial Planar Transistor  
General Purpose Amplifier  
For use as general purpose amplifiers and switches  
requiring collector current to 300 mA.  
TO-92 Plastic Package  
Weight approx. 0.19g  
Absolute Maximum Ratings* (Ta = 25)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
Unit  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current  
50  
V
V
50  
5
500  
V
mA  
mW  
mW/ OC  
OC  
Total Device Dissipation  
Derate above 25 OC  
625  
Ptot  
5
Junction Temperature  
Storage Temperature Range  
Tj  
150  
TS  
-55 to +150  
OC  
*These ratings are limiting values above which the serviceability of semiconductor device may be impaired.  
Notes:  
1) These ratings are based on a maximum junction temperature of 150  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 25/07/2003  
ST 2N3416 / 2N3417  
Characteristics at Tamb=25 OC  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at VCE=4.5V, IC=2mA  
ST 2N3416  
ST 2N3417  
hFE  
hFE  
75  
-
-
225  
540  
-
-
180  
Small Signal Current Gain  
at VCE=4.5V, IC=2mA, f =1kHz  
ST 2N3416  
ST 2N3417  
hfe  
hfe  
75  
-
-
-
-
-
-
180  
Collector Cutoff Current  
at VCB=25V  
ICBO  
ICBO  
-
-
-
-
100  
15  
nA  
at VCB=18V, Ta=100  
μA  
Emitter Cutoff Current  
at VEB=5V  
IEBO  
-
-
-
-
-
-
100  
0.3  
1.3  
-
nA  
V
Collector Saturation Voltage  
at IC=50mA, IB=3mA  
Base Saturation Voltage  
at IC=50mA, IB=3mA  
VCE(sat)  
VBE(sat)  
V(BR)CEO  
V(BR)CBO  
-
0.6  
50  
50  
V
Collector Emitter Breakdown Voltage*  
at IC=10Ma  
V
Collector Base Breakdown Voltage  
at IC=10μA  
-
V
Emitter Base Breakdown Voltage  
at IE=10μA  
V(BR)EBO  
RthA  
5
-
-
-
-
-
V
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Case  
200  
83.3  
OC /W  
OC /W  
RthC  
-
μs  
*Pulse Test : Pulse width300 , Duty Cycle2%.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 25/07/2003  

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