ST2N4400 [SEMTECH]

NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
ST2N4400
型号: ST2N4400
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Epitaxial Silicon Transistor
NPN外延硅晶体管

晶体 晶体管
文件: 总4页 (文件大小:257K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ST 2N4400 / 2N4401  
NPN Epitaxial Silicon Transistor  
General purpose transistor  
Collector Emitter Voltage: VCEO = 40 V  
Collector Dissipation: PC (max) = 625 mW  
On special request, these transistors can be  
manufactured in different pin configurations.  
TO-92 Plastic Package  
Weight approx. 0.19g  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
60  
V
V
40  
6
V
Collector Current  
600  
mA  
mW  
Power Dissipation  
Ptot  
625  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
TS  
-55 to +150  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N4400 / 2N4401  
O
Characteristics at Tamb = 25 C  
Parameter  
Symbol  
Min.  
20  
Max.  
-
Unit  
-
DC Current Gain  
at VCE=1V, IC=0.1mA  
ST 2N4401  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
at VCE=1V, IC=1mA  
at VCE=1V, IC=10mA  
at VCE=1V, IC=150mA  
at VCE=2V, IC=500mA  
ST 2N4400  
ST 2N4401  
20  
40  
-
-
-
-
ST 2N4400  
ST 2N4401  
40  
58  
-
-
-
-
ST 2N4400  
ST 2N4401  
50  
100  
20  
150  
300  
-
-
-
-
-
-
ST 2N4400  
ST 2N4401  
40  
Collector Cutoff Current  
at VCB=35V  
ICBO  
-
100  
nA  
nA  
V
Emitter Cutoff Current  
at VEB=5V  
IEBO  
-
100  
Collector Emitter Breakdown Voltage  
at IC=1mA  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
40  
60  
6
-
-
-
Collector Base Breakdown Voltage  
at IC=100µA  
V
Emitter Base Breakdown Voltage  
at IE=100µA  
V
Collector Emitter Saturation Voltage  
at IC=150mA, IB=15mA  
at IC=500mA, IB=50mA  
Collector Saturation Voltage  
at IC=150mA, IB=15mA  
at IC=500mA, IB=50mA  
Gain Bandwidth Product  
at VCE=10V, IC=20mA, f=100MHz  
VCEsat  
VCEsat  
-
-
0.4  
V
V
0.75  
VBEsat  
VBEsat  
0.75  
-
0.95  
1.2  
V
V
ST 2N4400  
ST 2N4401  
fT  
fT  
200  
250  
-
-
MHz  
MHz  
Collector Base Capacitance  
at VCB=5V, f=100MHz  
CCBO  
ton  
-
-
6.5  
35  
pF  
ns  
ns  
Turn On Time  
at VCC=30V, VBE=2V, IC=150mA, IB1=15mA  
Turn Off Time  
toff  
255  
at VCC=30V, IC=150mA, IB1=IB2=15mA  
-
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N4400 / 2N4401  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N4400 / 2N4401  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  

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