ST2N3905 [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | ST2N3905 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总3页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2N3905 / 2N3906
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
As complementary types the NPN transistors
2N3903 and 2N3904 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Weight approx. 0.19g
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
40
V
V
40
6
200
V
mA
mW
Power Dissipation
Ptot
625
O
Junction Temperature
Storage Temperature Range
Tj
150
C
O
C
TS
- 55 to + 150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007
ST 2N3905 / 2N3906
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 1 V, -IC = 0.1 mA
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
30
60
40
80
50
100
30
60
15
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
at -VCE = 1 V, -IC = 1 mA
at -VCE = 1 V, -IC = 10 mA
at -VCE = 1 V, -IC = 50 mA
at -VCE = 1 V, -IC = 100 mA
150
300
-
-
-
-
Collector Cutoff Current
at -VCB = 30 V
Emitter Cutoff Current
at -VEB = 6 V
Collector Base Breakdown Voltage
at -IC = 10 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
-ICBO
-
-
50
50
-
nA
nA
V
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
40
40
6
-
V
Emitter Base Breakdown Voltage
at -IE = 10 µA
-
V
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
-VCEsat
-VCEsat
-
-
0.25
0.4
V
V
Base Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
-VBEsat
-VBEsat
-
-
0.85
0.95
V
V
Gain Bandwidth Product
at -VCE = 20 V, -IC = 10 mA, f = 100 MHz
2N3905
2N3906
fT
fT
200
250
-
-
MHz
MHz
Collector Base Capacitance
at -VCB = 5 V, f = 100 KHz
Ccb
-
4.5
pF
Emitter Base Capacitance
at -VEB = 0.5 V, f = 100 KHz
Ceb
-
-
10
pF
Thermal Resistance Junction to Ambient
RthA
250 1)
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007
ST 2N3905 / 2N3906
DC Current Gain
2
VCE=1V
TJ=125
C
1
25
C
-55
C
0.2
0.1
1
100
200
0.1
10
IC (mA)
Collector Saturation Region
1
0.8
0.6
TJ=25
C
30mA
100mA
IC=1mA
0.4
0.2
0
10mA
10
0.001
0.1
1
IB (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 09/03/2007
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