ST2N2907A [SEMTECH]
PNP Silicon Epitaxial Planar Transistor; PNP硅外延平面晶体管
| 型号： | ST2N2907A |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | PNP Silicon Epitaxial Planar Transistor |
| 文件： | 总2页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2N2907 / 2N2907A
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group
according to its DC current gain. As
complementary type the NPN transistor ST
2N2222 and ST 2N2222A are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
O
Absolute Maximum Ratings (Ta = 25 C)
Value
Parameter
Symbol
Unit
ST 2N2907 ST 2N2907A
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-VCBO
-VCEO
-VEBO
-IC
60
V
V
40
60
5
V
600
625
150
mA
mW
Power Dissipation
Ptot
O
C
Junction Temperature
Storage Temperature Range
Tj
O
C
TS
-55 to +150
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005
ST 2N2907 / 2N2907A
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
ST 2N2907
ST 2N2907A
ST 2N2907
ST 2N2907A
ST 2N2907
ST 2N2907A
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
hFE
35
75
-
-
-
-
-
-
-
-
-
-
at -IC = 0.1 mA, -VCE = 10 V
-
50
-
at -IC = 1 mA, -VCE = 10 V
at -IC = 10 mA, -VCE = 10 V
100
75
-
-
100
100
30
-
300
at -IC = 150 mA, -VCE = 10 V
at -IC = 500 mA, -VCE = 10 V
ST 2N2907
-
-
ST 2N2907A
50
Collector Cutoff Current
at -VCB = 50 V
ST 2N2907
-ICBO
-ICBO
-
-
20
10
nA
nA
ST 2N2907A
Collector Base Breakdown Voltage
at -IC = 10 µA
-V(BR)CBO
60
-
V
Collector Emitter Breakdown Voltage
at -IC = 10 mA
ST 2N2907
-V(BR)CEO
-V(BR)CEO
40
60
-
-
V
V
ST 2N2907A
Emitter Base Breakdown Voltage
at -IE = 10 µA
-V(BR)EBO
5
-
V
Collector Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
Base Saturation Voltage
at -IC = 150 mA, -IB = 15 mA
at -IC = 500 mA, -IB = 50 mA
Gain Bandwidth Product
at -IC = 50 mA , -VCE = 20 V, f = 100 MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Input Capacitance
-VCE(sat)
-VCE(sat)
-
-
0.4
1.6
V
V
-VBE(sat)
-VBE(sat)
-
-
1.3
2.6
V
V
fT
200
-
MHz
pF
Cob
Cib
-
-
8
at -VBE = 2 V, f = 1 MHz
30
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/12/2005
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