ST2N4402 [SEMTECH]

PNP Epitaxial Silicon Transistor; PNP外延硅晶体管
ST2N4402
型号: ST2N4402
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

PNP Epitaxial Silicon Transistor
PNP外延硅晶体管

晶体 晶体管
文件: 总5页 (文件大小:329K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ST 2N4402 / 2N4403  
PNP Epitaxial Silicon Transistor  
General purpose transistor  
Collector Emitter Voltage: VCEO = 40 V  
Collector Dissipation: PC (max) = 625 mW  
On special request, these transistors can be  
manufactured in different pin configurations.  
TO-92 Plastic Package  
Weight approx. 0.19g  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
Symbol  
-VCBO  
-VCEO  
-VEBO  
-IC  
Value  
Unit  
40  
V
V
40  
5
V
Collector Current  
600  
mA  
mW  
Power Dissipation  
Ptot  
625  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
C
TS  
-55 to +150  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N4402 / 2N4403  
O
Characteristics at Tamb=25 C  
Parameter  
Symbol  
Min.  
Max.  
Unit  
DC Current Gain  
at -VCE=1V, -IC=0.1mA  
at -VCE=1V, -IC=1mA  
ST 2N4403  
hFE  
hFE  
hFE  
hFE  
30  
30  
60  
-
-
-
-
-
-
ST 2N4402  
ST 2N4403  
at -VCE=1V, -IC=10mA  
at -VCE=1V, -IC=150mA  
at -VCE=2V, -IC=500mA  
ST 2N4402  
ST 2N4403  
50  
100  
-
-
-
-
hFE  
hFE  
hFE  
ST 2N4402  
ST 2N4403  
50  
100  
150  
300  
-
-
ST 2N4403  
ST 2N4403  
hFE  
hFE  
20  
20  
-
-
-
-
Collector Cutoff Current  
at -VCB=35V  
-ICBO  
-
100  
100  
-
nA  
nA  
V
Emitter Cutoff Current  
at -VEB=5V  
-IEBO  
-
Collector Emitter Breakdown Voltage  
at -IC=1mA  
-V(BR)CEO  
-V(BR)CBO  
-V(BR)EBO  
-VCEsat  
40  
40  
5
Collector Base Breakdown Voltage  
at -IC=100µA  
-
V
Emitter Base Breakdown Voltage  
at -IE=100µA  
-
V
Collector Saturation Voltage  
at -IC=150mA, -IB=15mA  
Base Saturation Voltage  
at -IC=150mA, -IB=15mA  
Gain Bandwidth Product  
at -VCE=10V, -IC=20mA, f=100MHz  
-
0.4  
0.95  
V
-VBEsat  
0.75  
V
fT  
fT  
150  
200  
-
-
MHz  
MHz  
ST 2N4402  
ST 2N4403  
Collector Base Capacitance  
at -VCB=10V, f=140MHz  
Turn On Time  
CCBO  
ton  
-
-
-
8.5  
35  
pF  
ns  
ns  
at -VCC=30V, -VBE=2V, -IC=150mA, -IB1=15mA  
Turn Off Time  
toff  
255  
at -VCC=30V, -IC=150mA, -IB1=-IB2=15mA  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N4402 / 2N4403  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N4402 / 2N4403  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  
ST 2N4402 / 2N4403  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 02/12/2005  

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