STPS80H100C_10 [STMICROELECTRONICS]
High voltage power Schottky rectifier; 高压功率肖特基整流器
| 型号： | STPS80H100C_10 |
| 厂家： | 
ST |
| 描述： | High voltage power Schottky rectifier |
| 文件： | 总7页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STPS80H100C
High voltage power Schottky rectifier
Features
A1
K
■ High reverse voltage
A2
■ Negligible switching losses
■ Low forward voltage drop
■ Low leakage current
■ High temperature
■ Low thermal resistance
■ Avalanche capability specified
A2
K
A1
Max247
STPS80H100CY
Description
Dual center tap Schottky rectifier suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
j
Table 1.
Device summary
Symbol
IF(AV)
VRRM
Value
Packaged in Max247, this device is intended for
use in high frequency computer and telecom
converters.
2 x 40 A
100 V
Tj (max)
VF(max)
175 °C
0.70 V
June 2010
Doc ID 6727 Rev 3
1/7
www.st.com
7
Characteristics
STPS80H100C
1
Characteristics
Table 2.
Symbol
Absolute ratings (limiting values, per diode)
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
100
50
V
A
IF(RMS) Forward rms current
Tc = 155 °C Per diode
δ = 0.5 Per device
40
80
IF(AV) Average forward current
A
IFSM
IRRM
PARM Repetitive peak avalanche power
Surge non repetitive forward current tp = 10 ms sinusoidal
400
2
A
A
Repetitive peak reverse current
tp = 2 µs, F= 1 kHz
tp = 1 µs, Tj = 25 °C
39200
-65 to + 175
175
W
Tstg
Tj
Storage temperature range
Maximum operating junction temperature(1)
°C
°C
V/µs
dV/dt Critical rate of rise of reverse voltage
10000
1
dPtot
dTj
<
1.
condition to avoid thermal runaway for a diode on its own heatsink
Rth(j-a)
Table 3.
Symbol
Thermal resistance
Parameter
Value
Unit
Per diode
Total
0.7
0.5
Rth(j-c) Junction to case
Rth(c) Coupling
°C/W
0.3
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R
th(j-c)
th(c)
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
20
20
µA
Reverse leakage
current
(1)
IR
VR = VRRM
IF = 40 A
7
mA
0.8
Tj = 125 °C IF = 40 A
Tj = 25 °C IF = 80 A
Tj = 125 °C IF = 80 A
0.65
0.79
0.7
(2)
VF
Forward voltage drop
V
0.94
0.84
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
2
P = 0.5 x I
+ 0.0055 I
F(AV)
F (RMS)
2/7
Doc ID 6727 Rev 3
STPS80H100C
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
Average forward current versus
versus average forward current
(per diode)
ambient temperature
(δ = 0.5, per diode)
PF(av)(W)
IF(av)(A)
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
δ = 0.5
Rth(j-a)=Rth(j-c)
δ = 0.2
δ = 1
δ = 0.1
δ = 0.05
Rth(j-a)=5°C/W
T
T
tp
=tp/T
δ
IF(av) (A)
tp
=tp/T
Tamb(°C)
δ
0
0
0
25
50
75
100
125
150
175
0
5
10 15 20 25 30 35 40 45 50
Figure 3.
Normalized avalanche power
derating versus pulse duration
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(t )
PARM(1µs)
p
PARM(Tj)
PARM(25 °C)
1
1.2
1
0.1
0.8
0.6
0.4
0.2
0
0.01
Tj(°C)
150
tp(µs)
1000
0.001
25
50
75
100
125
0.01
0.1
1
10
100
Figure 5.
Non repetitive surge peak forward Figure 6.
current versus overload duration
(maximum values, per diode)
Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
IM(A)
Zth(j-c)/Rth(j-c)
500
1.0
0.8
0.6
0.4
0.2
0.0
400
300
200
Tc=50°C
δ = 0.5
Tc=75°C
δ = 0.2
δ = 0.1
Tc=110°C
T
IM
100
t
Single pulse
δ=0.5
t(s)
tp(s)
tp
=tp/T
δ
0
1E-3
1E-2
1E-1
1E+0
1E-3
1E-2
1E-1
1E+0
Doc ID 6727 Rev 3
3/7
Characteristics
STPS80H100C
Figure 7.
Reverse leakage current versus
Figure 8.
Junction capacitance versus
reverse voltage applied
reverse voltage applied
(typical values, per diode)
(typical values, per diode)
IR(µA)
C(nF)
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
5.0
F=1MHz
Tj=25°C
Tj=125°C
1.0
Tj=25°C
VR(V)
VR(V)
0.1
1
0
10 20 30 40 50 60 70 80 90 100
2
5
10
20
50
100
Figure 9.
Forward voltage drop versus forward current (maximum value, per diode)
IFM(A)
500
Tj=125°C
100
Tj=25°C
10
VFM(V)
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
4/7
Doc ID 6727 Rev 3
STPS80H100C
Package information
2
Package information
●
●
Epoxy meets UL94, V0
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Table 5.
Max247 dimensions
Dimensions
Millimeters
Ref.
Inches
Min. Max.
Min.
Max.
A
A1
b
4.70
2.20
1.00
2.00
3.00
0.40
19.70
5.35
15.30
14.20
3.70
5.30
2.60
1.40
2.40
3.40
0.80
20.30
5.55
15.90
15.20
4.30
0.185
0.087
0.038
0.079
0.118
0.016
0.776
0.211
0.602
0.559
0.146
0.209
0.102
0.055
0.094
0.133
0.031
0.799
0.219
0.626
0.598
0.169
E
A
b1
b2
c
D
L1
A1
b1
D
L
b2
e
E
b
c
L
e
L1
Doc ID 6727 Rev 3
5/7
Ordering information
STPS80H100C
3
Ordering information
Table 6.
Order code
STPS80H100CY
Ordering information
Marking
Package Weight Base qty Delivery mode
STPS80H100CY
Max247
4.4 g
30
Tube
4
Revision history
Table 7.
Date
Document revision history
Revision
Change
July-2003
2B
Last release.
Updated package illustration on page 1 and Section 2: Package
information on page 5.
21-Jun-2010
3
6/7
Doc ID 6727 Rev 3
STPS80H100C
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Doc ID 6727 Rev 3
7/7
相关型号：
STPS80H100TV
Rectifier Diode, Schottky, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon, SOT-227, 4 PIN
MICROSEMI
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