VNN7NV04PTR-E [STMICROELECTRONICS]
OMNIFET II fully autoprotected Power MOSFET; OMNIFET II完全autoprotected功率MOSFET
| 型号： | VNN7NV04PTR-E |
| 厂家： | 
ST |
| 描述： | OMNIFET II fully autoprotected Power MOSFET |
| 文件： | 总29页 (文件大小：412K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VNN7NV04P-E, VNS7NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Features
2
Type
RDS(on)
Ilim
Vclamp
3
2
VNN7NV04P-E
VNS7NV04P-E
1
60 mΩ
6 A
40 V
SO-8
SOT-223
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
Description
The VNN7NV04P-E, VNS7NV04P-E, are
monolithic devices designed in
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
STMicroelectronics VIPower™ M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
Directive
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1.
Package
Device summary
Order codes
Tube
Tape and reel
SOT-223
SO-8
-
VNN7NV04PTR-E
VNS7NV04P-E VNS7NV04PTR-E
July 2011
Doc ID 15632 Rev 3
1/29
www.st.com
1
Contents
VNN7NV04P-E, VNS7NV04P-E
Contents
1
2
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.1
2.2
2.3
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3.1
3.2
3.3
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
SO-8 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . . 16
SOT-223 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . 17
4
5
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.1
4.2
SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5.1
5.2
5.3
5.4
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
2/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Device summary. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SOT-223 thermal parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Doc ID 15632 Rev 3
3/29
List of figures
VNN7NV04P-E, VNS7NV04P-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test circuit for diode recovery times. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 10. Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 11. Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 12. Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 13. Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 14. Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 15. Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 16. Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 17. Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 18. Static drain-source on resistance vs Id. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 19. Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 20. Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 21. Turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 22. Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 23. Output characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 24. Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 25. Switching time resistive load (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 26. Switching time resistive load (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Figure 27. Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 28. Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 29. Step response current limit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 30. SO-8 maximum turn-off current versus load inductance. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 31. SO-8 demagnetization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 32. SOT-223 maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 33. SOT-223 demagnetization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 34. SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 35. Rthj-amb vs PCB copper area in open box free air condition. . . . . . . . . . . . . . . . . . . . . . . 18
Figure 36. SO-8 thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 37. Thermal fitting model of an OMNIFET II in SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 38. SOT-223 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 39. Rthj-amb vs PCB copper area in open box free air condition. . . . . . . . . . . . . . . . . . . . . . . 20
Figure 40. SOT-223 thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 41. Thermal fitting model of an OMNIFET II in SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 42. SOT-223 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 43. SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 44. SOT-223 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 45. SO-8 tube shipment (no suffix). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 46. SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
4/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Block diagram and pin description
1
Block diagram and pin description
Figure 1.
Block diagram
DRAIN
2
Overvoltage
Clamp
INPUT
Gate
Control
1
Linear
Current
Limiter
Over
Temperature
3
SOURCE
FC01000
Figure 2.
Configuration diagram (top view)
(1)
SO-8 Package
1
DRAIN
DRAIN
DRAIN
DRAIN
SOURCE
SOURCE
SOURCE
INPUT
8
5
4
1. For the pins configuration related to SOT-223 see outlines at page 1.
Doc ID 15632 Rev 3
5/29
Electrical specifications
VNN7NV04P-E, VNS7NV04P-E
2
Electrical specifications
Figure 3.
Current and voltage conventions
I
D
V
DS
DRAIN
R
I
IN
IN
INPUT
SOURCE
V
IN
2.1
Absolute maximum ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
SOT-223
SO-8
VDS
VIN
Drain-source voltage (VIN = 0 V)
Input voltage
Internally clamped
Internally clamped
+/-20
V
V
IIN
Input current
mA
Ω
RIN MIN
ID
Minimum input series impedance
Drain current
150
Internally limited
-10.5
A
IR
Reverse DC output current
A
Electrostatic discharge (R = 1.5 KΩ,
C = 100 pF)
VESD1
4000
V
Electrostatic discharge on output pin only
(R = 330 Ω, C = 150 pF)
VESD2
Ptot
EMAX
16500
V
Total dissipation at Tc = 25 °C
7
4.6
37
W
Maximum switching energy (L = 0.7 mH;
RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C;
IL = 9 A)
40
mJ
mJ
Maximum switching energy (L = 0.6 mH;
RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C;
IL = 9 A)
EMAX
Tj
Tc
Operating junction temperature
Case operating temperature
Storage temperature
Internally limited
Internally limited
-55 to 150
°C
°C
°C
Tstg
6/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Electrical specifications
2.2
Thermal data
Table 3.
Thermal data
Value
Unit
Symbol
Parameter
SOT-223
SO-8
Rthj-case
Rthj-lead
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-lead max
Thermal resistance junction-ambient max
18
°C/W
°C/W
°C/W
27
96(1)
90(1)
2
1. When mounted on a standard single-sided FR4 board with 0.5 mm of Cu (at least 35 µm thick) connected
to all DRAIN pins.
2.3
Electrical characteristics
-40 °C < Tj < 150 °C, unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min
Typ
Max
Unit
Off
Drain-source clamp
voltage
VCLAMP
VIN = 0 V; ID = 3.5 A
40
45
55
V
Drain-source clamp
threshold voltage
VCLTH
VINTH
IISS
VIN = 0 V; ID = 2 mA
VDS = VIN; ID = 1 mA
VDS = 0 V; VIN = 5 V
36
V
V
Input threshold voltage
0.5
2.5
Supply current from input
pin
100
6.8
150
µA
I
IN = 1 mA
6
8
V
V
Input-source clamp
voltage
VINCL
IIN = -1 mA
-1.0
-0.3
30
V
DS = 13 V; VIN = 0 V; Tj = 25 °C
DS = 25 V; VIN = 0 V
µA
µA
Zero input voltage drain
current (VIN = 0 V)
IDSS
V
75
On
VIN = 5 V; ID = 3.5 A; Tj = 25 °C
IN = 5 V; ID = 3.5 A
65
mΩ
mΩ
Static drain-source on
resistance
RDS(on)
V
130
Dynamic (Tj = 25 °C, unless otherwise specified)
Forward
transconductance
(1)
gfs
VDD = 13 V; ID = 3.5 A
9
S
COSS
Output capacitance
VDS = 13 V; f = 1 MHz; VIN = 0 V
220
pF
Doc ID 15632 Rev 3
7/29
Electrical specifications
VNN7NV04P-E, VNS7NV04P-E
Table 4.
Symbol
Electrical characteristics (continued)
Parameter Test conditions
Min
Typ
Max
Unit
Switching (Tj = 25 °C, unless otherwise specified)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
100
470
500
350
0.75
4.6
300
1500
1500
1000
2.3
ns
ns
ns
ns
µs
µs
µs
µs
VDD = 15 V; ID = 3.5 A;
Vgen = 5 V; Rgen = RIN MIN = 150 Ω;
(see figure Figure 4)
Turn-off delay time
Fall time
Turn-on delay time
Rise time
VDD = 15 V; ID = 3.5 A;
Vgen = 5 V; Rgen = 2.2 KΩ;
(see figure Figure 4)
14.0
16.0
11.0
Turn-off delay time
Fall time
5.4
3.6
VDD = 15 V; ID = 3.5 A; Vgen = 5 V;
Rgen = RIN MIN = 150 Ω
(dI/dt)on Turn-on current slope
Qi Total input charge
6.5
18
A/µs
nC
VDD = 12 V; ID = 3.5 A; VIN = 5 V;
I
gen = 2.13 mA (see figure Figure 7)
Source drain diode (Tj = 25 °C, unless otherwise specified)
(1)
VSD
trr
Forward on voltage
ISD = 3.5 A; VIN = 0 V
0.8
220
0.28
2.5
V
ns
µC
A
Reverse recovery time
ISD = 3.5 A; dI/dt = 20 A/µs;
Qrr
Reverse recovery charge VDD = 30 V; L = 200 µH;
(see test circuit, figure Figure 5)
IRRM
Reverse recovery current
Protections (-40 °C < Tj < 150 °C, unless otherwise specified)
Ilim
Drain current limit
VIN = 5 V; VDS = 13 V
VIN = 5 V; VDS = 13 V
6
9
12
A
Step response current
limit
tdlim
4.0
µs
Overtemperature
shutdown
Tjsh
150
135
175
15
200
°C
Tjrs
Igf
Overtemperature reset
Fault sink current
°C
VIN = 5 V; VDS = 13 V; Tj = Tjsh
mA
starting Tj = 25 °C; VDD = 24 V; VIN = 5 V;
Rgen = RIN MIN = 150 Ω; L = 24 mH;
(see Figure 6 and Figure 8)
Single pulse avalanche
energy
Eas
200
mJ
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
8/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Protection features
3
Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
Power MOSFET through a low impedance path.
The device then behaves like a standard Power MOSFET and can be used as a switch from
DC up to 50 kHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100µA) flows into the input pin in order to supply the internal circuitry.
The device integrates:
●
●
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the overtemperature threshold Tjsh
.
●
Overtemperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Overtemperature cutout occurs in the range 150 to 190 °C, a
typical value being 170 °C. The device is automatically restarted when the chip
temperature falls of about 15 °C below shutdown temperature.
●
Status feedback: in the case of an overtemperature fault condition (Tj > Tjsh), the device
tries to sink a diagnostic current Igf through the input pin in order to indicate fault
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current Igf, the input pin falls to 0 V. This
however not affects the device operation: no requirement is put on the current capability
of the input pin driver except to be able to supply the normal operation drive current
IISS
.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL logic circuit.
Doc ID 15632 Rev 3
9/29
Protection features
Figure 4.
VNN7NV04P-E, VNS7NV04P-E
Switching time test circuit for resistive load
ID
90%
tf
tr
10%
t
t
td(on)
td(off)
Vgen
Figure 5.
Test circuit for diode recovery times
A
A
B
D
I
FAST
DIODE
L=100uH
OMNIFET
S
B
150Ω
D
S
V
DD
R
gen
I
OMNIFET
V
gen
8.5
Ω
10/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Protection features
Figure 6.
Unclamped inductive load test
circuits
Figure 7.
Input charge test circuit
V
IN
R
GEN
V
IN
P
W
Figure 8.
Unclamped inductive waveforms
Doc ID 15632 Rev 3
11/29
Protection features
VNN7NV04P-E, VNS7NV04P-E
3.1
Electrical characteristics curves
Figure 9.
Derating curve
Figure 10. Transconductance
Gfs (S)
20
18
16
14
12
10
8
Vds=13V
Tj=-40ºC
Tj=25ºC
Tj=150ºC
6
4
2
0
0
1
2
3
4
5
6
7
8
Id(A)
Figure 11. Static drain-source on resistance
vs input voltage (part 1/2)
Figure 12. Static drain-source on resistance
vs input voltage (part 2/2)
Rds(on) (mOhm)
140
Rds(on) (mOhm)
120
110
120
Id=3.5A
Tj=150ºC
100
90
100
Tj=150ºC
Id=6A
80
70
60
Id=1A
80
Tj=25ºC
60
50
Tj=25ºC
40
Id=6A
Id=1A
Tj=-40ºC
40
20
0
30
Tj= - 40ºC
Id=6A
Id=1A
20
10
0
3
3.5
4
4.5
5
5.5
6
6.5
7
3
3.5
4
4.5
Vin(V)
5
5.5
6
6.5
Vin(V)
Figure 13. Source-drain diode forward
characteristics
Figure 14. Static drain source on resistance
Vsd (mV)
1000
Rds(on) (mohms)
150
950
Vin=0V
900
125
Vin=5V
850
800
750
700
650
600
550
500
100
Tj=150ºC
75
50
Tj=25ºC
Tj=-40ºC
25
0
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
Id(A)
Id(A)
12/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Protection features
Figure 15. Turn-on current slope (part 1/2)
Figure 16. Turn-on current slope (part 2/2)
di/dt(A/us)
2.25
di/dt(A/us)
8
2
7
6
5
4
3
2
1
0
Vin=3.5V
Vdd=15V
Id=3.5A
Vin=5V
Vdd=15V
Id=3.5A
1.75
1.5
1.25
1
0.75
0.5
0.25
100 200 300 400 500 600 700 800 900 1000 1100
100 200 300 400 500 600 700 800 900 1000 1100
Rg(ohm)
Rg(ohm)
Figure 17. Transfer characteristics
Figure 18. Static drain-source on resistance
vs Id
Rds(on) (mOhm)
140
Idon(A)
10
Tj=25ºC
9
Tj=-40ºC
Vds=13.5V
120
Tj=150ºC
8
Vin=3.5V
100
7
6
5
4
3
2
1
0
Tj=150ºC
Vin=5V
80
60
40
20
0
Vin=3.5V
Tj=25ºC
Tj=-40ºC
Vin=5V
Vin=3.5V
Vin=5V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Id(A)
Vin(V)
Figure 19. Input voltage vs input charge
Figure 20. Turn-off drain source voltage slope
(part 1/2)
dv/dt(V/us)
300
Vin(V)
8
7
250
Vds=12V
Id=3.5A
Vin=5V
Vdd=15V
6
200
Id=3.5A
5
4
3
2
1
0
150
100
50
0
200
400
600
Rg(ohm)
800
1000
900 1100
100
300
500
700
0
5
10
15
20
25
Qg(nC)
Doc ID 15632 Rev 3
13/29
Protection features
VNN7NV04P-E, VNS7NV04P-E
Figure 21. Turn-off drain source voltage slope Figure 22. Capacitance variations
(part 2/2)
C(pF)
dv/dt(v/us)
600
300
250
500
f=1MHz
Vin=0V
Vin=3.5V
Vdd=15V
Id=3.5A
200
150
100
50
400
300
200
100
0
100 200 300 400 500 600 700 800 900 1000 1100
Rg(ohm)
0
5
10
15
20
25
30
35
Vds(V)
Figure 23. Output characteristics
Figure 24. Normalized on resistance vs
temperature
v
Rds(on)
2.25
ID(A)
12
11
10
9
2
Vin=5V
Id=3.5A
Vin=5V
Vin=4.5V
Vin=4V
1.75
8
7
1.5
1.25
1
Vin=3V
6
5
4
3
Vin=2.5V
Vin=2V
2
0.75
0.5
1
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13
-50
-25
0
25
50
75
100 125 150
175
VDS(V)
T(ºC)
Figure 25. Switching time resistive load (part Figure 26. Switching time resistive load (part
1/2)
2/2)
t(us)
5.5
t(ns)
1600
tr
5
4.5
4
Vdd=15V
Id=3.5A
Vin=5V
1400
1200
1000
800
600
400
200
0
tr
tf
td(off)
Vdd=15V
Id=3.5A
Rg=150ohm
3.5
3
2.5
2
1.5
1
td(off)
td(on)
tf
td(on)
0.5
0
250
750
1250
1750
2250
2500
0
500
1000
1500
2000
3.25
3.5
3.75
4
4.25
Vin(V)
4.5
4.75
5
5.25
Rg(ohm)
14/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Protection features
Figure 27. Normalized input threshold voltage Figure 28. Normalized current limit vs junction
vs temperature
temperature
Vin(th)
1.15
Ilim (A)
15
14
13
12
11
10
9
1.1
1.05
1
Vds=13V
Vin=5V
Vds=Vin
Id=1mA
0.95
0.9
0.85
0.8
8
7
0.75
0.7
6
5
-50
-25
0
25
50
75
100 125 150
175
-50
-25
0
25
50
75
100
125
150
175
T(ºC)
Tj (ºC)
Figure 29. Step response current limit
Tdlim(us)
7
6.5
Vin=5V
Rg=150ohm
6
5.5
5
4.5
4
3.5
5
10
15
20
25
30
35
Vdd(V)
Doc ID 15632 Rev 3
15/29
Protection features
VNN7NV04P-E, VNS7NV04P-E
3.2
SO-8 maximum demagnetization energy
Figure 30. SO-8 maximum turn-off current versus load inductance
LMAX (A)
I
100
10
A
B
C
1
0.1
1
10
100
L(mH)
Legend
A = Single Pulse at T
= 150 °C
Jstart
B = Repetitive pulse at T
= 100 °C
Jstart
C = Repetitive Pulse at T
= 125 °C
Jstart
Conditions:
V
CC = 13.5 V
Values are generated with RL = 0 Ω. In case of repetitive pulses, Tjstart (at beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
Figure 31. SO-8 demagnetization
V
, I
L
IN
Demagnetization
Demagnetization
Demagnetization
t
16/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Protection features
3.3
SOT-223 maximum demagnetization energy
Figure 32. SOT-223 maximum turn-off current versus load inductance
LMAX (A)
I
100
10
1
0.01
0.1
1
10
L(mH)
Legend
A = Single Pulse at T
= 150 °C
Jstart
B = Repetitive pulse at T
= 100 °C
Jstart
C = Repetitive Pulse at T
= 125 °C
Jstart
Conditions:
V
CC = 13.5 V
Values are generated with RL = 0 Ω. In case of repetitive pulses, Tjstart (at beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
Figure 33. SOT-223 demagnetization
V
, I
L
IN
Demagnetization
Demagnetization
Demagnetization
t
Doc ID 15632 Rev 3
17/29
Package and PCB thermal data
VNN7NV04P-E, VNS7NV04P-E
4
Package and PCB thermal data
4.1
SO-8 thermal data
Figure 34. SO-8 PC board
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: 0.14 cm2, 0.8 cm2, 2 cm2).
Figure 35. Rthj-amb vs PCB copper area in open box free air condition
SO-8 at 2 pins connected to TAB
RTHj_amb (ºC/W)
110
105
100
95
90
85
80
75
70
0
0.5
1
1.5
2
2.5
PCBCu heatsink area (cm^2)
18/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Package and PCB thermal data
Figure 36. SO-8 thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
100
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
T ime (s)
Figure 37. Thermal fitting model of an OMNIFET II in SO-8
Tj
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
Pd
T_amb
Equation 1 Pulse calculation formula
= R ⋅ δ + Z (1 – δ)
Z
THδ
TH
THtp
where δ = t ⁄ T
p
Table 5.
SO-8 thermal parameter
Area/island (cm2)
Footprint
2
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
0.2
0.9
3.5
21
16
58
28
3.00E-04
Doc ID 15632 Rev 3
19/29
Package and PCB thermal data
Table 5. SO-8 thermal parameter (continued)
VNN7NV04P-E, VNS7NV04P-E
Area/island (cm2)
Footprint
2
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
9.00E-04
7.50E-03
0.045
0.35
1.05
2
4.2
SOT-223 thermal data
Figure 38. SOT-223 PC board
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: 0.11 cm2, 1 cm2, 2 cm2).
Figure 39. Rthj-amb vs PCB copper area in open box free air condition
RTH j-amb (°C/W)
140
130
120
110
100
90
80
70
60
0
0.5
1
1.5
2
2.5
Cu area (cm^2)
20/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Package and PCB thermal data
Figure 40. SOT-223 thermal impedance junction ambient single pulse
ZTH (°C/W)
1000
100
10
1
0.1
0.0001 0.001
0.01
0.1
1
10
100
1000
Time (s)
Figure 41. Thermal fitting model of an OMNIFET II in SOT-223
Tj
C1
R1
C2
R2
C3
R3
C4
R4
C5
R5
C6
R6
Pd
T_amb
Equation 2 Pulse calculation formula
= R ⋅ δ + Z (1 – δ)
Z
THδ
TH
THtp
where δ = t ⁄ T
p
Doc ID 15632 Rev 3
21/29
Package and PCB thermal data
VNN7NV04P-E, VNS7NV04P-E
Table 6.
SOT-223 thermal parameter
Area/island (cm2)
Footprint
2
R1 (°C/W)
R2 (°C/W)
R3 (°C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
0.2
1.1
4.5
24
0.1
100
45
3.00E-04
9.00E-04
3.00E-02
0.16
1000
0.5
2
22/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Package and packing information
5
Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
5.1
SOT-223 mechanical data
Table 7.
SOT-223 mechanical data
millimeters
Typ.
Symbol
Min.
Max.
A
B
1.8
0.85
3.15
0.35
6.7
0.6
2.9
0.7
3
B1
c
0.24
6.3
0.26
6.5
D
e
2.3
e1
E
4.6
3.3
6.7
3.5
3.7
7.3
H
7
V
10 (max)
A1
0.02
0.1
Figure 42. SOT-223 package dimensions
0046067
Doc ID 15632 Rev 3
23/29
Package and packing information
VNN7NV04P-E, VNS7NV04P-E
5.2
SO-8 mechanical data
Table 8.
SO-8 mechanical data
mm
Dim.
Min.
Typ.
Max.
1.75
0.25
1.65
0.85
0.48
0.25
0.5
A
a1
a2
a3
b
0.1
0.65
0.35
0.19
0.25
b1
C
c1
D
45 (typ.)
4.8
5.8
5
E
6.2
e
1.27
3.81
e3
F
3.8
0.4
4
L
1.27
0.6
M
S
8 (max.)
L1
0.8
1.2
24/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Figure 43. SO-8 package dimensions
Package and packing information
Doc ID 15632 Rev 3
25/29
Package and packing information
VNN7NV04P-E, VNS7NV04P-E
5.3
SOT-223 packing information
Figure 44. SOT-223 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C ( 0.2)
F
1000
1000
330
1.5
13
20.2
12.4
60
G (+ 2 / -0)
N (min)
T (max)
18.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
W
12
4
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
P0 ( 0.1)
P
8
D ( 0.1/-0)
D1 (min)
F ( 0.05)
K (max)
P1 ( 0.1)
1.5
1.5
5.5
4.5
2
Compartment Depth
Hole Spacing
All dimensions are in mm.
End
Start
Top
No components
500mm min
Components
No components
500mm min
cover
tape
Empty components pockets
saled with cover tape.
User direction of feed
26/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
Package and packing information
5.4
SO-8 packing information
Figure 45. SO-8 tube shipment (no suffix)
B
C
Base Q.ty
Bulk Q.ty
Tube length ( 0.5)
A
100
2000
532
3.2
6
A
B
C ( 0.1)
0.6
Figure 46. SO-8 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C ( 0.2)
F
2500
2500
330
1.5
13
20.2
12.4
60
G (+ 2 / -0)
N (min)
T (max)
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
W
P0 ( 0.1)
P
12
4
Tape Hole Spacing
Component Spacing
Hole Diameter
8
D ( 0.1/-0) 1.5
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
D1 (min)
F ( 0.05)
K (max)
1.5
5.5
4.5
2
P1 ( 0.1)
End
All dimensions are in mm.
Start
Top
No components
500mm min
Components
No components
cover
tape
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
Doc ID 15632 Rev 3
27/29
Revision history
VNN7NV04P-E, VNS7NV04P-E
6
Revision history
Table 9.
Date
Document revision history
Revision
Changes
15-Oct-2009
26-Oct-2009
1
2
Initial release.
Updated Figure 43: SO-8 package dimensions.
Updated Table 8: SO-8 mechanical data.
Table 4: Electrical characteristics:
05-Jul-2011
3
– RDS(on): updated maximum values
– td(on), tr, td(off), tf: updated min, typ and max values
28/29
Doc ID 15632 Rev 3
VNN7NV04P-E, VNS7NV04P-E
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29/29
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