MAAPGM0018-DIE [TE]
2W Ku-Band Power Amplifier 12.0-15.5 GHz; 2W Ku波段功率放大器12.0-15.5 GHz的
| 型号： | MAAPGM0018-DIE |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | 2W Ku-Band Power Amplifier 12.0-15.5 GHz |
| 文件： | 总6页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RO-P-DS-3009 - -
2W Ku-Band Power Amplifier
12.0-15.5 GHz
Preliminary Information
Features
12.0-15.5 GHz GaAs MMIC Amplifier
♦ 12.0-15.5 GHz Operation
♦ 2 Watt Saturated Output Power Level
♦ Variable Drain Voltage (4-10V) Operation
♦ Excellent Input and Output VSWR
♦ Self-Aligned MSAG® MESFET Process
Primary Applications
♦ Point-to-Point Radio
♦ SatCom
Description
The MAAPGM0018-Die is a 3-stage 2 W power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-
Aligned Gate (MSAG®) MESFET Process. This process features
silicon nitride passivation and polyimide scratch protection.
Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 18 dBm
Parameter
Symbol
Typical
Units
Bandwidth
12.0-15.5
GHz
f
Output Power
33
25
dBm
%
POUT
PAE
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
32
18
dBm
dB
P1dB
G
Input VSWR
Gate Current
Drain Current
2nd Harmonic
3rd Harmonic
VSWR
1.5:1
< 5
mA
A
IGG
IDD
2f
< 1.2
-40
dBc
dBc
3f
-55
1. TB = MMIC Base Temperature
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2W Ku-Band Power Amplifier
MAAPGM0018-DIE
Maximum Operating Conditions 1
Parameter
Absolute Maximum
Units
dBm
V
Symbol
PIN
Input Power
23.0
+12.0
-3.0
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
VDD
V
VGG
IDQ
900
mA
W
7.0
Quiescent DC Power Dissipated (No RF)
Junction Temperature
PDISS
TJ
180
°C
Storage Temperature
TSTG
-55 to +150
°C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
Recommended Operating Conditions
Characteristic
Drain Voltage
Gate Voltage
Symbol
VDD
Min
4.0
Typ
8.0
Max
10.0
-1.5
Unit
V
VGG
-2.3
-2.0
V
Input Power
PIN
Tj
21.0
150
dBm
°C
Junction Temperature
MMIC Base Temperature
TB
Note 2
°C
2. Maximum MMIC Base Temperature = 150°C —11.4 °C/W * VDD * IDQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply VGG = -2 V, VDD= 0 V.
2. Ramp VDD to desired voltage, typically 8.0 V.
3. Adjust VGG to set IDQ, (approximately @ –2 V).
4. Set RF input.
5. Power down sequence in reverse. Turn gate
voltage off last.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3009 - -
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2W Ku-Band Power Amplifier
MAAPGM0018-DIE
50
40
30
20
10
0
50
POUT
PAE
40
30
20
10
0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V
and Pin = 18 dBm.
50
40
30
20
10
0
50
POUT
PAE
40
30
20
10
0
4
5
6
7
8
9
10
Drain Voltage (V)
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 13 GHz.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3009 - -
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2W Ku-Band Power Amplifier
MAAPGM0018-DIE
50
VDD = 4
VDD = 8
VDD = 6
40
30
20
10
0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Figure 3. 1dB Compression Point vs. Drain Voltage
30
6
5
4
3
2
1
GAIN
VSWR
25
20
15
10
5
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
Frequency (GHz)
Figure 4. Small Signal Gain and Input VSWR vs. Frequency at VDD = 8V.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3009 - -
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2W Ku-Band Power Amplifier
MAAPGM0018-DIE
Mechanical Information
Chip Size: 4.404 x 3.380 x 0.075 mm (173 x 133 x 3 mils)
3.380mm.
3.228mm.
VGG
VGG
VD3
3.218mm.
VD1, 2
1.690mm.
1.690mm.
VD1, 2
VD3
0.162mm.
VGG
VGG
0.152mm.
0
0
Chip edge to bond pad dimensions are shown to the center of the bond
Figure 5. Die Layout
Bond Pad Dimensions
Pad
Size (mils)
4 x 8
Size (µm)
100 x 200
200 x 150
150 x 150
RF In and Out
DC Drain Supply Voltage VDD
DC Gate Supply Voltage VGG
8 x 6
6 x 6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
RO-P-DS-3009 - -
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2W Ku-Band Power Amplifier
MAAPGM0018-DIE
0.1 µF
0.1 µF
0.1 µF
VDD
100 pF
100 pF
100 pF
VGG
VGG
VD3
VD1,
2
RFIN
RFOUT
VD1,
VD3
2
VGG
VGG
100 pF
100 pF
100 pF
VGG
VDD
35
Ω
0.1 µF
0.1 µF
0.1 µF
Note: Indicated VGG pads represent the nominal bias configuration. Optionally, the VGG pads between VD 1, 2
and VD3 can be used if more convenient.
Figure 6. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Note: Indicated VGG pads represent the nominal bias configuration. Optionally, the VGG
pads between VD 1, 2 and VD3 can be used if more convenient.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 °C to less than 5 minutes.
Wirebonding: Bond @ 160 °C using standard ball or thermal compression wedge bond techniques. For
DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of
shortest length, although ball bonds are also acceptable.
Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent
damage to amplifier.
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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