NPT1004 [TE]
Gallium Nitride 28V, 45W RF Power Transistor;
| 型号： | NPT1004 |
| 厂家： | 
TE CONNECTIVITY |
| 描述： | Gallium Nitride 28V, 45W RF Power Transistor |
| 文件： | 总6页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT1004
Gallium Nitride 28V, 45W RF Power Transistor
®
Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for pulsed, WiMAX, W-CDMA, LTE,
and other light thermal load applications from
DC to 4.0GHz
• 2500MHz performance
ꢀ • 45W P3dB CW power
ꢀ • 13.5 dB small signal gain
ꢀ •ꢀ55%ꢀefficiencyꢀatꢀP3dB
DC - 4000MHz
45 Watt, 28 Volt
GaN HEMT
• 100% RF tested
• Low cost, surface mount SOIC package
•ꢀHighꢀreliabilityꢀgoldꢀmetallizationꢀprocess
• Lead-free and RoHS compliant
• Subject to EAR99 Export Control
RF Specifications (2-Tone): VDS = 28V, IDQꢀ=ꢀ400mA,ꢀꢀFrequencyꢀ=ꢀ2500MHz,ꢀToneꢀSpacingꢀ=ꢀ1MHz,ꢀTC = 25°C,
Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
Average Output Power at 3dB Compression
35
45
-
W
P1dB
GSS
h
Average Output Power at 1dB Compression
Small Signal Gain
-
28
13.5
55
-
-
-
W
dB
%
12.5
50
DrainꢀEfficiencyꢀatꢀ3dBꢀGainꢀCompression
Typical OFDM Performance (2500-2700MHz): VDS = 28V, IDQ = 350mA, POUT,AVG = 37dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, continuous frame data, 10 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probabil-
ityꢀonꢀCCDF.ꢀꢀTCꢀ=ꢀ25°C.ꢀꢀMeasuredꢀinꢀLoadꢀPullꢀSystemꢀ(ReferꢀtoꢀTableꢀ2ꢀandꢀFigureꢀ1)
Symbol
Parameter
Typ
Units
EVM
GP
h
Error Vector Magnitude
Power Gain
2.0
13.0
27
%
dB
%
DrainꢀEfficiency
Typical OFDM Performance (3300-3500MHz): VDS = 28V, IDQ = 350mA, POUT,AVG = 36.5dBm, single carrier OFDM
waveform 64-QAM 3/4, 8 burst, 20ms frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01%
probabilityꢀonꢀCCDF.ꢀꢀTCꢀ=ꢀ25°C.ꢀꢀMeasuredꢀinꢀLoadꢀPullꢀSystemꢀ(ReferꢀtoꢀTableꢀ2ꢀandꢀFigureꢀ1)
Symbol
Parameter
Typ
Units
EVM
GP
h
Error Vector Magnitude
Power Gain
2.0
10.5
25
%
dB
%
DrainꢀEfficiency
NPT1004
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NDS-010 Rev. 4, April 2013
NPT1004
DC Specifications: TC=25°C
Symbol
Parameter
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
(VGS = -8V, ID =ꢀ16mA)
VBDS
100
-
-
-
V
Drain-Source Leakage Current
(VGS = -8V, VDS =ꢀ60V)
IDLK
2
10
mA
On Characteristics
Gate Threshold Voltage
(VDS = 28V, ID =ꢀ16mA)
VT
-2.3
-2.0
-
-1.8
-1.5
0.25
-1.3
-1.0
V
V
W
Gate Quiescent Voltage
(VDS = 28V, ID =ꢀ350mA)
VGSQ
RON
On Resistance
(VGS = 2V, ID =ꢀ120mA)
0.30
Drain Current
ID
(VDS = 7V pulsed, 300ms pulse width,
0.2%ꢀdutyꢀcycle,ꢀVGS =ꢀ2V)
7.5
9.5
-
A
Absolute Maximum Ratings: Not simultaneous, TC=25°C unless otherwise noted
Symbol
Parameter
Max
Units
VDS
VGS
PT
Drain-Source Voltage
100
-10 to 3
40
V
V
Gate-Source Voltage
TotalꢀDeviceꢀPowerꢀDissipationꢀ(Deratedꢀaboveꢀ25°C)
ThermalꢀResistanceꢀ(Junction-to-Case)
Storage Temperature Range
W
qJC
4.3
°C/W
°C
TSTG
TJ
-65 to 150
200
Operating Junction Temperature
°C
HBM
HumanꢀBodyꢀModelꢀESDꢀRatingꢀ(perꢀJESD22-A114)
MachineꢀModelꢀESDꢀRatingꢀ(perꢀJESD22-A113)
1Bꢀ(>500V)
M1(>50V)
MM
MoistureꢀSensitivityꢀLevelꢀ(perꢀIPC/JEDECꢀJ-STD-020):ꢀRatingꢀofꢀ3ꢀatꢀ260ꢀ°CꢀPackageꢀPeakꢀTemperature
MSL
NPT1004
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NDS-010 Rev. 4, April 2013
NPT1004
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =350mA, TA=25°C unless otherwise noted
DQ
Table 1:ꢀOptimumꢀSourceꢀandꢀLoadꢀImpedancesꢀforꢀCWꢀGain,ꢀDrainꢀEfficiency,ꢀandꢀOutputꢀPowerꢀPerformance
Frequency
(MHz)
Drain Efficiency
Z (W)
S
Z (W)
L
P
SAT
(W)
G
(dB)
SS
@ P
(%)
SAT
900
2.0 + j2.7
1.6 - j0.8
2.0 - j3.2
3.2 - j6.5
6.0 + j3.3
4.5 + j0.5
3.5 - j5.0
2.9 - j8.0
45
22.5
72
1500
2500
3500
45
45
35
18.5
14.0
12.0
70
65
60
Table 2:ꢀOptimumꢀSourceꢀandꢀLoadꢀImpedancesꢀforꢀWiMAXꢀGain,ꢀDrainꢀEfficiency,ꢀOutputꢀPower,ꢀand
LinearityꢀPerformance
Frequency
Drain Efficiency
(%)
Z (W)
Z (W)
P
(W)
Gain (dB)
S
L
OUT
(MHz)
25001
26001
27001
33002
35002
38002
2.1 - j7.6
2.3 - j7.7
2.3 - j9.0
3.3 - j11.8
3.5 - j13.5
4.5 - j16.2
3.1 - j3.9
3.3 - j4.4
3.4 - j4.7
3.7 - j7.2
3.5 - j10.0
3.7 - j11.2
5
5
5
14.0
13.0
13.0
11.5
10.5
8.0
27
27
27
30
25
17
6.3
4.5
3.2
Noteꢀ1:ꢀSingleꢀcarrierꢀOFDMꢀwaveformꢀ64-QAMꢀ3/4,ꢀ8ꢀburst,ꢀcontinuousꢀframeꢀdata,ꢀ10ꢀMHzꢀchannelꢀbandwidth.ꢀ
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀPeak/Avgꢀ=ꢀ10.3dBꢀ@ꢀ0.01%ꢀprobabilityꢀonꢀCCDF,ꢀ2%ꢀEVM.
Noteꢀ2:ꢀSingleꢀcarrierꢀOFDMꢀwaveformꢀ64-QAMꢀ3/4,ꢀ8ꢀburst,ꢀ20msꢀframe,ꢀ15msꢀframeꢀdata,ꢀ3.5ꢀMHzꢀchannelꢀbandwidth.
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀPeak/Avgꢀ=ꢀ10.3dBꢀ@ꢀ0.01%ꢀprobabilityꢀonꢀCCDF,ꢀ2%ꢀEVM.
Z
is the source impedance
presented to the device.
S
Z is the load impedance
L
presented to the device.
(a)ꢀCWꢀImpedances
(b)ꢀOFDMꢀImpedances
Figure 1 - Optimal Impedances for CW and OFDM Performance
NPT1004
Page 3
NDS-010 Rev. 4, April 2013
NPT1004
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, I =350mA, TA=25°C unless otherwise noted.
DQ
Figure 2 - TypicalꢀCWꢀPerformance,
Figure 3 - OFDM Performance Tuned for
ꢀatꢀ2%ꢀEVMꢀinꢀLoad-PullꢀSystem
Frequencyꢀ=ꢀ900ꢀtoꢀ3500MHz,ꢀI =400mA
DQ
P
OUT
Figure 4 - OFDM Performance Tuned for
Figure 5 - OFDM Performance Tuned for
ꢀatꢀ2%ꢀEVMꢀinꢀLoad-PullꢀSystem
P
OUT
ꢀatꢀ1.5%ꢀEVMꢀinꢀLoad-PullꢀSystem
P
OUT
Figure 6 - QuiescientꢀGateꢀVoltageꢀ(VGSQ)ꢀRequiredꢀ
Figure 7 - MTTF of NRF1 devices as a
to Reach IDQ as a Function of Case Temperature
function of junction temperature
NPT1004
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NDS-010 Rev. 4, April 2013
NPT1004
Ordering Information
Part Number
Order Multiple Description
NPT1004DT
NPT1004DR
97
Tube;ꢀNPT1004ꢀinꢀDꢀ(PSOP2)ꢀPackage
TapeꢀandꢀReel;ꢀNPT1004ꢀinꢀDꢀ(PSOP2)ꢀPackage
1500
1:ꢀToꢀfindꢀaꢀNitronexꢀcontactꢀinꢀyourꢀarea,ꢀvisitꢀourꢀwebsiteꢀatꢀhttp://www.nitronex.com
D Package Dimensions and Pinout
Inches
Min
Millimeters
Dim
Max
0.196
0.157
0.123
0.870
0.244
Min
Max
4.98
3.99
3.12
2.21
6.22
A
A
B
0.189
0.150
0.107
0.071
0.230
4.80
3.81
2.72
1.80
5.84
C
1.Gate
C
D
E
8
1
7
6
3
5
4
2. Gate
3. Gate
4. Gate
5. Drain
D
B
E
9
6.Drain
f
0.50 BSC
1.270 BSC
D/2
7. Drain
F
0.0138
0.055
0.000
0.0075
0.016
0°
0.0192
0.065
0.004
0.0098
0.035
8°
0.35
1.40
0.00
0.19
0.40
0°
0.49
1.65
0.10
0.25
0.89
8°
8. Drain
2
9. Source Pad
G
G1
H
L
ꢀꢀꢀꢀ(Bottom)
A/2
Chamfer
H
G
m
G1
SEATING
PLANE
m
L
SEATING PLANE
F
(8X)
f
(6X)
Mounting Footprints
.150
.055
.105
.100
Solder Paste
.020" X .040"
(8X Typ)
R.016 (4X Typ)
.140 .145 .176
.180
.030
Solder Paste
.080" X .120"
(Typ)
Heat Sink
Pedestal
Solder Mask
.005" Relief
(Typ)
PWB Pad
(8X Typ)
PWB Cutout
NPT1004
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NDS-010 Rev. 4, April 2013
NPT1004
Nitronex, LLC
2305 Presidential Drive
Durham, NC 27703 USA
+1.919.807.9100ꢀ(telephone)
+1.919.807.9200ꢀ(fax)
info@nitronex.com
www.nitronex.com
Additional Information
This part is lead-free and is compliant with the RoHS directive
(Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment).
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NPT1004
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NDS-010 Rev. 4, April 2013
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