SSM6E01TU_07 [TOSHIBA]
Load Switch Applications; 负载开关应用
| 型号： | SSM6E01TU_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Load Switch Applications |
| 文件： | 总8页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6E01TU
TOSHIBA Multi-Chip Device
Silicon P-Channel MOS Type (U-MOS II) + N-Channel MOS Type (Planer)
SSM6E01TU
Load Switch Applications
Unit: mm
•
•
P-channel MOSFET and N-channel MOSFET incorporated into one
package.
Low power dissipation due to P-channel MOSFET that features low
R
and low-voltage operation
DS (ON)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
−12
±12
V
V
DS
Gate-Source voltage
V
GSS
DC
I
−1.0
−2.0
D
Drain current
A
Pulse
I
(Note 2)
DP
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
20
10
V
V
DS
Gate-Source voltage
V
GSS
DC
I
0.05
0.2
D
Drain current
A
Pulse
I
(Note 2)
JEDEC
―
―
―
DP
JEITA
Absolute Maximum Ratings (Q1, Q2 common)
TOSHIBA
(Ta = 25°C)
Weight: 7.0 mg (typ.)
Characteristics
Symbol
(Note 1)
Rating
Unit
Drain power dissipation
Channel temperature
P
0.5
150
W
°C
°C
D
T
ch
Storage temperature range
T
stg
−55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2)
Note 2: Pulse width limited by maximum channel temperature.
Marking
Equivalent Circuit (top view)
6
5
4
6
5
4
Q1
Q2
KTA
1
2
3
1
2
3
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2007-11-01
SSM6E01TU
Handling Precaution
This product has a MOS structure and is sensitive to electrostatic discharge. When handling individual devices
(that have not yet been mounted on a PCB), ensure that the environment is protected against static electricity.
Operators should wear anti-static clothing, containers and other objects which may come into direct contact with
devices should be made of anti-static materials.
Thermal resistance R
and drain power dissipation PD vary depending on board material, board area, board
th (j-a)
thickness and pad area. When using this device, please take heat dissipation into consideration.
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2007-11-01
SSM6E01TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage (diode)
Symbol
Test Condition
= 1.0 A, V = 0 V
Min
Typ.
Max
Unit
V
I
⎯
⎯
⎯
⎯
1.2
±1
V
μA
V
DSF
DR
GS
Gate leakage current
I
V
= ±10 V, V
= 0
GSS
GS
DS
Drain-Source breakdown voltage
Drain cut-off current
V
I
= −1 mA, V
= 0
−12
⎯
⎯
⎯
(BR) DSS
D
GS
I
V
V
V
= −12 V, V
= 0
⎯
−1
μA
V
DSS
DS
DS
DS
GS
Gate threshold voltage
Forward transfer admittance
V
= −3 V, I = −0.1 mA
−0.4
1.3
⎯
⎯
−1.1
⎯
th
D
|Y |
fs
= −3 V, I = −0.5 A
(Note 3)
(Note 3)
2.5
125
180
310
S
D
I
I
= −0.5 A, V
= −4 V
160
240
⎯
D
D
GS
GS
Drain-Source ON resistance
R
mΩ
DS (ON)
= −0.5 A, V
= −2.5 V (Note 3)
= 0, f = 1 MHz
⎯
Input capacitance
C
V
= −10 V, V
⎯
pF
iss
DS
GS
Note 3: Pulse test
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= 10 V, V = 0
DS
⎯
20
⎯
⎯
⎯
⎯
⎯
50
4
15
⎯
1
μA
V
GSS
GS
Drain-Source breakdown voltage
Drain cut-off current
V
I
= 0.1 mA, V
= 0
= 0
(BR) DSS
D
GS
GS
I
V
V
V
= 20 V, V
μA
V
DSS
DS
DS
DS
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
V
= 3 V, I = 0.1 mA
0.7
25
⎯
1.3
⎯
10
⎯
1.3
th
D
|Y |
fs
= 3 V, I = 10 mA
(Note 3)
(Note 3)
mS
Ω
D
R
I
= 10 mA, V
= 2.5 V
GS
DS (ON)
D
C
V
V
= 3 V, V
= 0, f = 1 MHz
⎯
11
1.0
pF
MΩ
iss
DS
GS
GS
Gate-Source resistance
R
= 0~10 V
0.7
GS
Note 3: Pulse test
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I = ±100 μA for
D
this product. For normal switching operation, V
requires higher voltage than V and V requires lower
GS (off)
GS (on)
th
voltage than V . (Relationship can be established as follows: V
th
< V < V
)
GS (off)
th
GS (on)
Please take this into consideration for using the device.
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2007-11-01
SSM6E01TU
Q1 (Pch MOSFET)
I
– V
I – V
D GS
D
DS
−2
−10000
−1000
−100
−10
−4 V
Common source
= −3 V
−2.0 V
V
DS
−10 V
−1.8 V
−1.7 V
−1.5
−1
Ta = 25°C
−25°C
100°C
−1
−0.5
0
−0.1
Common source
Ta = 25°C
−0.01
0
−0.5
−1
−1.5
−2
0
−0.5
−1
−1.5
−2
−2.5
Drain-Source voltage
V
DS
(V)
Gate-Source voltage
V
(V)
GS
R
– I
R
– V
DS (ON)
D
DS (ON) GS
0.5
1
0.8
0.6
0.4
0.2
0
Common source
Common source
= −0.5 A
Ta = 25°C
I
D
0.4
0.3
0.2
0.1
0
−2.5 V
25°C
−4.0 V
−1.5
Ta = 100°C
−25°C
0
−0.5
−1.0
−2.0
0
−2
−4
−6
−8
−10
−12
Drain current
I
(A)
Gate-Source voltage
V
(V)
D
GS
R
– Ta
V
– Ta
th
DS (ON)
0.5
0.4
0.3
0.2
0.1
0
−1
−0.8
−0.6
−0.4
−0.2
0
Common source
= −3 V
Common source
V
DS
= −0.1 mA
I
= −0.5 A
D
I
D
−2.5 V
−4 V
−25
0
25
50
75
100
125
150
−25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
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SSM6E01TU
Q1 (Pch MOSFET)
⎪Y ⎪ – I
fs
C – V
DS
D
10
1
1000
100
10
C
iss
C
oss
0.1
C
rss
Common source
= 0
V
GS
f = 1 MHz
Ta = 25°C
0.01
−1
−0.1
−1
−10
−100
−10
−100
−1000
−10000
Drain current
I
(mA)
Drain-Source voltage
V
DS
(V)
D
Dynamic input characteristics
t – I
D
−10
500
100
Common source
Common source
= −1.0 A
V
V
= −10 V
DD
GS
I
D
−8
−6
−4
−2
0
= 0 to −2.5 V
= 4.7 Ω
Ta = 25°C
R
G
Ta = 25°C
t
off
V
= −10 V
DD
t
f
t
on
10
5
0
2
4
6
8
t
r
Total gate charge Qg (nC)
−0.01
−0.1
−1
Drain current
I
(A)
D
I
– V
DS
DR
−2
−1.6
−1.2
−0.8
−0.4
0
Common source
V
= 0 V
D
GS
Ta = 25°C
G
S
0
0.2
0.4
0.6
0.8
1
Drain-Source voltage
V
DS
(V)
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SSM6E01TU
Q2 (Nch MOSFET)
I
– V
I
D
– V (low-voltage area)
D
DS
DS
100
100
80
2.5
2.0
2.0
4.0
2.5
2.2
Common source
Ta = 25°C
80
1.9
Common source
Ta = 25°C
60
40
60
40
1.8
1.8
1.6
1.7
1.6
20
0
20
0
V
= 1.4 V
GS
V
= 1.4 V
GS
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
Drain-Source voltage
V
DS
(V)
Drain-Source voltage
V
DS
(V)
I
– V
I – V
D GS
DR
DS
100
1000
100
10
Common source
= 0
Common source
V
GS
Ta = 25°C
V
= 3 V
DS
D
10
1
G
I
DR
Ta = 100°C
1
0.1
25°C
S
−25°C
0.1
0.01
0.01
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
0
0.5
1
1.5
2
2.5
3
0
Drain-Source voltage
V
DS
(V)
Gate-Source voltage
V
(V)
GS
⎪Y ⎪ – I
fs
D
300
100
C – V
DS
Common source
100
V
= 3 V
DS
Common source
= 0
Ta = 25°C
V
GS
50
30
f = 1 MHz
Ta = 25°C
50
30
C
iss
10
C
oss
5
3
10
5
C
rss
1
0.1
1
3
5
10
30
50
100
0.3
1
3
10
30
Drain current
I
(mA)
Drain-Source voltage
V
DS
(V)
D
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SSM6E01TU
Q2 (Nch MOSFET)
R
– I
t – I
D
DS (ON)
D
10
8
10000
Common source
Common source
V
V
= 3 V
DD
GS
5000
3000
Ta = 25°C
= 0~2.5 V
Ta = 25°C
t
off
1000
6
4
2
0
t
f
500
300
2.5
t
on
100
V
= 4 V
GS
t
r
50
30
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
Drain current
I
(mA)
D
Drain current
I
(mA)
D
R
– Ta
DS (ON)
10
8
Common source
I
= 10 mA
D
6
2.5
4
V
= 4 V
GS
2
0
−25
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
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2007-11-01
SSM6E01TU
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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