KI5402DC [TYSEMI]

Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS -20 V; 漏源电压VDS 30 V栅源电压VGS -20 V
KI5402DC
型号: KI5402DC
厂家: TY Semiconductor Co., Ltd    TY Semiconductor Co., Ltd
描述:

Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS -20 V
漏源电压VDS 30 V栅源电压VGS -20 V

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中文:  中文翻译
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MOSFIECICT  
Product specification  
KI5402DC  
Features  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
5 secs  
Steady State  
30  
20  
Unit  
V
Gate-Source Voltage  
VGS  
TA = 25  
6.7  
4.8  
4.9  
3.5  
ID  
Continuous Drain Current (TJ = 150 ) *  
TA = 70  
A
Pulsed Drain Current  
IDM  
IS  
20  
Continuous Source Current *  
2.1  
2.5  
1.3  
1.1  
1.3  
0.7  
TA = 25  
TA = 70  
Maximum Power Dissipation *  
PD  
W
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
Parameter  
-55 to 150  
260  
TJ, Tstg  
Symbol  
RthJA  
Typ  
40  
Max  
50  
Unit  
t
5 sec  
Maximum Junction-to-Ambienta  
/W  
Steady-State  
Steady-State  
80  
95  
Maximum Junction-to-Foot (Drain)  
RthJF  
15  
20  
* Surface Mounted on 1" X 1' FR4 Board.  
http://www.twtysemi.com  
1of 2  
sales@twtysemi.com  
4008-318-123  
MOSFIECICT  
Product specification  
KI5402DC  
Electrical Characteristics Ta = 25  
Parameter  
Gate Threshold Voltage  
Gate-Body Leakage  
Symbol  
Testconditons  
Min  
1.0  
Typ  
Max  
Unit  
V
VGS(th) VDS = VGS, ID = 250 ìA  
IGSS  
IDSS  
ID(on)  
rDS(on)  
nA  
A
VDS = 0 V, VGS = 20 V  
VDS = 24 V, VGS = 0 V  
100  
1
Zero Gate Voltage Drain Current  
On-State Drain Current*  
5
VDS = 24 V, VGS = 0 V, TJ = 55  
A
20  
A
VDS  
5 V, VGS = 10 V  
VGS = 10 V, ID = 4.9 A  
VGS = 4.5 V, ID = 3.9 A  
VDS = 10 V, ID = 4.9 A  
IS = 1.1 A, VGS = 0 V  
0.030  
0.045  
15  
0.035  
0.055  
Drain-Source On-State Resistance*  
Forward Transconductance*  
Schottky Diode Forward Voltage*  
Total Gate Charge  
gfs  
VSD  
Qg  
S
0.8  
13  
1.2  
20  
V
nC  
nC  
nC  
ns  
ns  
ns  
ns  
ns  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
td(on)  
tr  
VDS = 15 V, VGS = 10 V, ID = 4.9 A  
1.3  
3.1  
10  
Turn-On Delay Time  
Rise Time  
15  
15  
40  
15  
60  
VDD = 15 V, RL = 15 Ù  
10  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
25  
ID = 1 A, VGEN = 10V, RG = 6  
10  
Source-Drain Reverse Recovery Time  
trr  
30  
IF = 1.1 A, di/dt = 100 A/  
s
* Pulse test; pulse width  
300 s, duty cycle  
2%.  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  

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