MMBT5089G-AE3-R [UTC]
NPN GENERAL PURPOSE AMPLIFIER; NPN通用放大器
| 型号： | MMBT5089G-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN GENERAL PURPOSE AMPLIFIER |
| 文件： | 总6页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
NPN GENERAL PURPOSE
AMPLIFIER
DESCRIPTION
The devices are designed for low noise, high gain, general
purpose amplifier applications at collector currents from 1μA to
50mA.
ORDERING INFORMATION
Pin Assignment
Ordering Number
Package
Packing
1
2
B
B
3
MMBT5088G-AE3-R
MMBT5089G-AE3-R
SOT-23
SOT-23
E
E
C
C
Tape Reel
Tape Reel
MARKING
MMBT5088
MMBT5089
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R206-033,B
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
V
MMBT5088
MMBT5089
MMBT5088
MMBT5089
30
25
35
30
4.5
Collector-Emitter voltage
VCEO
Collector-Base voltage
Emitter-base voltage
VCBO
V
V
VEBO
IC
Collector current-continuous
Total Device Dissipation
Linear Derating Factor above TA= 25℃
100
350
2.8
mA
mW
mW/℃
PD
Junction Temperature
TJ
125
°C
°C
°C
Operating Temperature
TOPR
-40 ~ +150
Storage Temperature
TSTG
-40 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These ratings are based on a maximum junction temperature of 150 degrees C.
3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
357
UNIT
℃/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note)
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
30
25
35
30
V
V
BVCEO
BVCBO
ICBO
IC=1.0mA, IB=0
V
Collector-Base Breakdown Voltage
Collector Cut-Off Current
IC=100μA, IE=0
V
VCB=20V, IE=0
50
50
50
nA
nA
nA
VCB=15V, IE=0
VEB=3.0V, IC=0
Emitter Cutoff Current
IEBO
VEB=4.5V, IC=0
100 nA
ON CHARACTERISTICS
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
300
400
350
450
300
400
900
V
CE=5.0V, IC=100μA
1200
DC Current Gain
hFE
VCE=5.0V, IC=1.0mA
VCE=5.0V,
IC=10mA(Note)
IC=10mA, IB=1.0mA
IC=10mA, VCE=5.0V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE(SAT)
VBE(ON)
0.5
0.8
V
V
SMALL SIGNAL CHARACTERISTICS
VCE=5.0mA,
Current Gain-Bandwidth Product
fT
50
MHz
pF
IC=500μA, f=20MHz
VCB=5.0V, IE=0,
f=100kHz
VEB=0.5V, IC=0,
f=100kHz
Collector-Base Capacitance
Emitter-Base Capacitance
CCB
CEB
4
10
pF
MMBT5088
350
450
1400
1800
VCE=5.0V, IC=1.0mA,
f=1.0kHz
Small-Signal Current Gain
Noise Figure
hFE
NF
MMBT5089
MMBT5088
VCE=5.0V, IC=100μA,
3.0
2.0
dB
dB
RS=10kΩ,
f=10kHz ~ 15.7kHz
MMBT5089
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%.
UNISONIC TECHNOLOGIES CO., Ltd
2 of 6
QW-R206-033,B
www.unisonic.com.tw
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs. Collector Current
0.3
0.25
0.2
1200
VCE=5.0V
125 C
1000
800
600
400
β=10
0.15
125 C
25 C
25 C
0.1
-40 C
200
0
0.05
-40 C
0.01
0.1 0.3
1
3
10 30 100
0.1
1
10
100
0.03
Collector Current, IC (mA)
Collector Current, IC (mA)
Collector-Cutoff Current
vs Ambient Temperature
Input and Output Capacitance vs
Reverse Bias Voltage
f=1.0MHz
10
5
VCB=45V
4
3
Cte
1
2
Cob
16
1
0
-0.1
0
4
8
12
20
125
Ambient Temperature, TA (℃)
25
50
75
100
150
Reverse Bias Voltage (V)
UNISONIC TECHNOLOGIES CO., Ltd
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QW-R206-033,B
www.unisonic.com.tw
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UNISONIC TECHNOLOGIES CO., Ltd
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QW-R206-033,B
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MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Contours of Constant
Narrow Band Noise Figure
Contours of Constant
Narrow Band Noise Figure
10,000
5,000
10,000
1.0dB
2.0dB
5,000
2.0dB
2,000
1,000
500
2,000
1,000
500
3.0dB
4.0dB
6.0dB
3.0dB
4.0dB
6.0dB
VCE=5.0V
VCE=5.0V
8.0dB
200f=1.0KHz
200f=10KHz
8.0dB
Bandwidth=200Hz
Bandwidth=2.0KHz
100
100
1
10
100
1,000
1
10
100
1,000
Collector Current, IC (µA)
Collector Current, IC (µA)
UNISONIC TECHNOLOGIES CO., Ltd
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QW-R206-033,B
www.unisonic.com.tw
MMBT5088/MMBT5089
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., Ltd
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QW-R206-033,B
www.unisonic.com.tw
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