10-PZ122PB100SH01-M819F38Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-PZ122PB100SH01-M819F38Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总16页 (文件大小：1162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
flowPHASE 0 + NTC
1200 V / 100 A
Features
flow 0 12 mm housing
● High efficiency IGBT4 half-bridge
● Full current FWD
● Thermistor
Schematic
Target applications
● Industrial Drives
● Power Supply
● Solar Inverters
● UPS
● Welding & Cutting
Types
● 10-FZ122PB100SH01-M819F38
● 10-PZ122PB100SH01-M819F38Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Switch
VCES
IC
Collector-emitter voltage
1200
100
300
267
±20
10
V
A
Collector current
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
A
Tj = Tjmax
Ts = 80 °C
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
80
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
550
1513
176
175
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
9,12 / 9,54
> 200
mm
mm
Clearance
12 mm housing solder pin / Press-fit pin
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Switch
Static
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,0038 25
5,1
5,8
6,4
V
V
25
100
1,78
1,95
2,39
2,42
15
0
150
1200
0
25
25
1,3
µA
nA
Ω
IGES
rg
20
120
7,5
6150
345
Cies
f = 1 Mhz
0
25
25
pF
Cres
Reverse transfer capacitance
Thermal
λfoil=220 W/mk
(KU-ALF5)
Rth(j-s)
Thermal resistance junction to sink
0,36
K/W
Dynamic
25
145
158
162
30
td(on)
Turn-on delay time
125
150
25
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
34
35
226
280
296
28
Rgon = 2 Ω
Rgoff = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
600
100
tf
68
78
5,418
8,228
9,217
4,109
6,315
Qr
FWD
Qr
FWD
Qr
FWD
= 6,6 μC
= 13,6 μC
= 16,4 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
6,928
Copyright Vincotech
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21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Diode
Static
25
100
1
2,47
2,45
2,6
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
150
25
120
1200
150
µA
17700
λfoil=220 W/mk
(KU-ALF5)
Rth(j-s)
Thermal resistance junction to sink
0,54
K/W
Dynamic
25
89
110
120
IRRM
125
150
25
Peak recovery current
A
190
trr
Qr
Reverse recovery time
125
150
25
125
150
25
363
401
ns
di/dt = 3733 A/μs
di/dt = 3472 A/μs
di/dt = 3322 A/μs
6,580
13,640
16,374
2,444
5,408
6,456
±15
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
mWs
A/µs
25
125
150
3570
2623
2154
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
4
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
300
)
VCE
= f(
)
VCE
I C
I C
300
VGE
:
7
V
V
V
I
I
I
I
I
I
I
I
8
9
250
200
150
100
50
250
200
150
100
50
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
150 °C
tp
=
=
250
150
μs
°C
Tj:
VGE
=
Tj
from
7 V to 17 V in steps of 1 V
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
= f(
100
)
VGE
= f( )
Z th(j-s) tp
I C
100
I
I
I
I
80
60
40
20
0
Z
Z
Z
Z
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
10
12
VG E (V)
=
100
0
μs
V
25 °C
150 °C
=
D
tp
tp / T
:
Tj
=
=
R th(j-s)
0,36
K/W
VCE
IGBT thermal model values
R (K/W)
τ (s)
6,77E-02
1,04E-01
1,38E-01
1,82E-02
1,72E-02
1,02E-02
1,58E+00
2,42E-01
7,23E-02
8,54E-03
1,30E-03
3,02E-04
Copyright Vincotech
5
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Half-Bridge Switch Characteristics
figure 6.
IGBT
Safe operating area
I C = f(VCE
)
1000
1ms
10µs
10ms
100µs
I
I
I
I
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
=
single pulse
80
D
=
ºC
Ts
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
6
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Half-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
300
)
= f( )
tp
I F
VF
Z th(j-s)
100
250
200
150
100
50
Z
Z
Z
Z
10-1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10-2
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
150 °C
D =
R th(j-s)
tp / T
0,54
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,32E-02
7,18E-02
1,35E-01
1,90E-01
4,68E-02
4,94E-02
1,37E-02
3,99E+00
8,03E-01
1,54E-01
5,92E-02
9,53E-03
1,82E-03
5,67E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
12
16
Eon
Eon
Eoff
E
E
E
E
E
E
E
E
Eon
Eon
9
6
3
0
12
8
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
4
0
70
80
90
100
110
25 °C
120
130
IC (A)
0
2
4
6
8
10
Rg (Ω)
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
8
8
Erec
Erec
E
E
E
E
E
E
E
E
Erec
Erec
6
4
2
0
6
4
2
0
Erec
Erec
0
2
4
6
8
10
70
80
90
100
110
120
130
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
8
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
t
t
t
t
t
t
td(off)
td(on)
td(off)
td(on)
0,1
0,1
tf
tf
tr
tr
0,01
0,01
0
2
4
6
8
10
70
80
90
100
110
120
130
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
600
±15
2
°C
Tj =
150
600
±15
100
°C
V
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,5
0,6
trr
trr
trr
trr
t
t
t
t
t
t
t
t
0,5
0,4
0,3
0,2
0,1
0
0,4
0,3
0,2
0,1
0
trr
trr
70
80
90
100
110
25 °C
120
130
0
2
4
6
8
10
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
9
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
20
20
Qr
Qr
Q
Q
Q
Q
Q
Q
Q
Q
Qr
Qr
15
10
5
15
10
5
Qr
Qr
0
0
70
80
90
100
110
25 °C
120
130
0
2
4
6
8
10
Rg on (Ω)
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE=
VGE =
I C=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
160
160
I
I
I I
I I
I
I
IRM
120
80
40
0
120
80
40
0
IRM
IRM
IRM
IRM
IRM
0
2
4
6
8
10
Rgo n (Ω)
70
80
90
100
110
25 °C
120
130
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
10
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
6000
5000
d
iF/d
t
t
d
iF/d
t
t
t
t
t
d
i
r r/d
t
t
t
t
dirr/d
t
i
i
i
i
5000
4000
3000
2000
1000
0
i
i
i
i
4000
3000
2000
1000
0
0
2
4
6
8
10
Rgon (Ω)
70
80
90
100
110
25 °C
120
130
IC (A)
With an inductive load at
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE =
VGE =
I C=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
250
I
I
I
I
IC MAX
200
150
100
50
I
I
I
I
I
I
I
I
V
V
V
V
0
0
200
400
600
800
1000
1200
1400
C E (V)
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
2
2
Ω
Copyright Vincotech
11
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Inverter Switching Definitions
General conditions
=
=
=
T j
125 °C
2 Ω
2 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
V
V
GE (100%) =
C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
100
280
V
600
100
158
V
I
C (100%) =
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
C (100%) =
tf
600
100
68
V
VC (100%) =
I C (100%) =
600
100
34
V
I
A
A
=
ns
tr
=
ns
Copyright Vincotech
12
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
VF (100%) =
600
100
110
363
V
I F (100%) =
Q r (100%) =
100
A
I
I
F (100%) =
A
13,64
μC
RRM (100%) =
A
trr
=
ns
Copyright Vincotech
13
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with Press-fit pins
Ordering Code
10-FZ122PB100SH01-M819F38
10-PZ122PB100SH01-M819F38Y
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
0
0
0
0
0
0
0
0
Y
Function
DC-
0
1
2
2,3
4,6
6,9
15,6
17,9
20,2
22,5
DC-
DC-
3
4
DC-
5
DC+
DC+
DC+
DC+
G12
S12
6
7
8
9
13,85 16,45
16,75 16,45
10
11
12
13
33,5
33,5
33,5
11,5
9,2
6,9
Ph
Ph
Ph
14
15
16
17
18
19
20
21
33,5
33,5
33,5
4,6
2,3
0
Ph
Ph
Ph
13,85 13,55
Ph
19,55
19,55
33,5
4,95
7,85
22,5
22,5
S11
G11
Therm1
Therm2
26,1
Copyright Vincotech
14
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
100 A
100 A
Half-Bridge Switch
D11, D12
Rt
FWD
NTC
1200 V
Half-Bridge Diode
Thermistor
Copyright Vincotech
15
21 Aug. 2018 / Revision 1
10-FZ122PB100SH01-M819F38Y
10-PZ122PB100SH01-M819F38Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xZ122PB100SH01-M819F38x-D1-14
21 Aug. 2018
Initial release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
21 Aug. 2018 / Revision 1
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