S852T-GS18 [VISHAY]
Transistor;
| 型号： | S852T-GS18 |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S852T / S852TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
SOT-23
Features
• Low supply voltage
• Low current consumption
e3
• 50 Ω input impedance at 945 MHz
2
2
3
1
• Low noise figure
• High power gain
SOT-323
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
19239
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Mechanical Data
Typ: S852T
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: S852TW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
Marking
Package
S852T
852
SOT-23
S852TW
W52
SOT-323
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
VCBO
Value
Unit
V
Collector-base voltage
12
Collector-emitter voltage
Emitter-base voltage
Collector current
VCEO
VEBO
IC
6
V
V
2
8
30
mA
mW
°C
Total power dissipation
Junction temperature
Storage temperature range
Tamb ≤ 125 °C
Ptot
Tj
150
Tstg
- 65 to + 150
°C
Document Number 85052
Rev. 1.4, 02-May-05
www.vishay.com
1
S852T / S852TW
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Test condition
Symbol
RthJA
Value
450
Unit
K/W
1)
Junction ambient
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
ICES
ICBO
Min
Typ.
Max
100
Unit
Collector-emitter cut-off current VCE = 12 V, VBE = 0
μA
Collector-base cut-off current
Emitter-base cut-off current
V
V
CB = 8 V, IE = 0
EB = 1 V, IC = 0
100
1
nA
μA
V
IEBO
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
6
Collector-emitter saturation
voltage
IC = 5 mA, IB = 0.5 mA
VCEsat
hFE
0.1
90
0.4
V
DC forward current transfer ratio VCE = 3 V, IC = 1 mA
40
150
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
VCE = 3 V, IC = 1 mA,
f = 500 MHz
Symbol
fT
Min
Typ.
4.7
Max
Unit
Transition frequency
GHz
VCE = 2 V, IC = 1.5 mA,
f = 500 MHz
fT
5.2
GHz
Collector-base capacitance
Noise figure
V
CB = 1 V, f = 1 MHz
S = ZSopt, f = 450 MHz,
VCE = 2 V, IC = 0.5 mA
S = ZSopt, f = 945 MHz,
Ccb
Fopt
0.25
1.1
pF
dB
Z
Z
Fopt
Fopt
1.8
2
dB
dB
VCE = 3 V, IC = 1 mA
ZS = ZSopt, f = 945 MHz,
VCE = 2 V, IC = 1.5 mA
Power gain
V
CE = 2 V, IC = 0.5 mA,
f = 450MHz
CE = 3 V, IC = 1 mA,
Gpe @Fopt
Gpe @Fopt
Gpe @Fopt
11.5
10.5
12
dB
dB
dB
V
f = 945 MHz
VCE = 2 V, IC = 1.5 mA,
f = 945 MHz
Collector current for fT max
Real part of input impedance
VCE = 2 V, f = 500 MHz
IC
3
mA
V
CE = 3 V, IC = 1 mA,
f = 945 MHz
CE = 2 V, IC = 1.5 mA,
f = 945 MHz
Re(h11e)
50
Ω
V
Re(h11e)
50
Ω
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2
Document Number 85052
Rev. 1.4, 02-May-05
S852T / S852TW
Vishay Semiconductors
Common Emitter S-Parameters
VCE/V
IC/mA
f/MHz
S11
S21
S12
S22
LIN
ANG
LIN
ANG
LIN
ANG
LIN
ANG
MAG
MAG
MAG
MAG
deg
deg
deg
86.8
83.4
80.0
76.8
73.6
71.5
69.0
66.7
65.0
63.5
61.8
60.4
58.6
84.8
79.8
75.1
71.5
68.3
65.9
63.6
62.1
61.2
60.3
59.5
59.3
58.7
deg
-2.3
2
0.5
100
200
9.976
0.969
0.955
0.939
0.920
0.901
0.881
0.861
0.838
0.818
0.793
0.772
0.746
0.972
0.898
0.858
0.811
0.762
0.710
0.662
0.617
0.576
0.540
0.502
0.470
0.439
-3.8
1.71
1.71
1.70
1.68
1.64
1.62
1.58
1.56
1.53
1.50
1.49
1.46
1.44
4.84
4.69
4.49
4.27
4.01
3.77
3.55
3.33
3.15
2.98
2.82
2.69
2.56
174.9
168.9
163.3
157.7
151.9
147.2
142.2
137.6
133.1
129.4
125.1
121.3
117.2
170.9
161.7
153.1
145.1
137.8
131.3
125.3
120.0
115.1
110.7
106.5
102.8
99.0
0.015
0.029
0.044
0.058
0.070
0.082
0.093
0.104
0.114
0.121
0.130
0.138
0.148
0.016
0.031
0.045
0.057
0.067
0.077
0.085
0.093
0.099
0.106
0.113
0.118
0.123
0.998
0.993
0.984
0.974
0.959
0.948
0.935
0.922
0.909
0.898
0.884
0.873
0.859
0.990
0.972
0.944
0.913
0.880
0.849
0.820
0.796
0.775
0.756
0.740
0.724
0.710
-7.9
-4.7
300
-11.7
-15.5
-18.9
-22.4
-25.8
-28.9
-32.3
-35.4
-38.8
-41.5
-45.1
-7.5
-6.7
400
-8.7
500
-10.6
-12.4
-13.9
-15.5
-17.2
-18.6
-19.7
-21.3
-22.6
-3.9
600
700
800
900
1000
1100
1200
1300
100
2
1.5
200
-14.5
-21.0
-27.0
-32.2
-36.8
-40.3
-43.8
-46.9
-50.0
-52.4
-54.8
-57.6
-7.4
300
-10.6
-13.1
-15.3
-16.8
-17.8
-18.7
-19.5
-20.3
-20.8
-21.4
-21.7
400
500
600
700
800
900
1000
1100
1200
1300
Document Number 85052
Rev. 1.4, 02-May-05
www.vishay.com
3
S852T / S852TW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
50
40
30
20
10
0
0
25
50
75
100 125 150
13619
T
amb
– Ambient Temperature (°C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
7000
3 V
f = 500 MHz
6000
2 V
5000
4000
V
= 1 V
CE
3000
2000
1000
0
0
1
2
3
4
I - Collector Current ( mA )
C
5
13620
Figure 2. Transition Frequency vs. Collector Current
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
13622
V
- Collector Base V oltage ( V )
CB
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
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Document Number 85052
Rev. 1.4, 02-May-05
S852T / S852TW
Vishay Semiconductors
V
S
= 8 V, I = 25 mA, Z = 50 Ω
CE
11
C
0
S
12
j
90°
1300 MHz
120°
900
j0.5
j2
500
150°
30°
j5
j0.2
0
100
∞
0.2
0.5
1
2
5
180°
0.04
0.08
0°
100
1300 MHz
900
-j0.2
-j5
500
-j2
-150°
-30°
-j0.5
-120°
-60°
13 562
-j
-90°
13 563
Figure 4. Input Reflection Coefficient
Figure 6. Reverse Transmission Coefficient
S
S
22
21
j
90°
120°
60°
j0.5
0.2
j2
900
500
150°
30°
1300 MHz
j0.2
0
j5
100
∞
0.5
1
2
5
180°
2
4
0°
100
1300 MHz
-j0.2
-j5
-150°
-30°
-j0.5
-j2
-120°
-60 °
13 565
-j
-90 °
13 564
Figure 5. Forward Transmission Coefficient
Figure 7. Output Reflection Coefficient
Document Number 85052
Rev. 1.4, 02-May-05
www.vishay.com
5
S852T / S852TW
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
0.4 (.016)
0.4 (.016)
ISO Method E
3.1 (.122)
Mounting Pad Layout
2.8 (.110)
0.4 (.016)
0.52 (0.020)
3
0.9 (0.035)
2.0 (0.079)
1
2
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
Package Dimensions in mm (Inches)
0.10 (0.004)
0.10 (0.004)
1.00 (0.039)
10
Mounting Pad Layout
2.05 (0.080)
0.39 (0.015)
0.9 (0.035)
2.0 (0.079)
0.95 (0.37)
0.95 (0.037)
0.30 (0.012)
1.3 (0.051)
96 12236
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6
Document Number 85052
Rev. 1.4, 02-May-05
S852T / S852TW
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85052
Rev. 1.4, 02-May-05
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7
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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