SI2356DS-T1-GE3 [VISHAY]
MOSFET N-CH 40V 4.3A SOT-23;
| 型号： | SI2356DS-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | MOSFET N-CH 40V 4.3A SOT-23 |
| 文件： | 总9页 (文件大小：195K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si2356DS
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
•
•
TrenchFET® Power MOSFET
VDS (V)
RDS(on) () Max.
0.051 at VGS = 10 V
0.054 at VGS = 4.5 V
0.070 at VGS = 2.5 V
Qg (Typ.)
I
D (A)a
4.3
100 % Rg Tested
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
40
4.1
3.8 nC
3.6
APPLICATIONS
TO-236
(SOT-23)
•
•
•
•
DC/DC Converter
Load Switch
LED Backlighting
Power Management
D
G
S
1
2
3
D
G
Top View
S
Si2356DS (E9)*
* Marking Code
N-Channel MOSFET
Ordering Information:
Si2356DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
Unit
VDS
40
Drain-Source Voltage
V
VGS
12
4.3
Gate-Source Voltage
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
3.4
Continuous Drain Current (TJ = 150 °C)
ID
3.2 a,b
2.6 a,b
20
A
IDM
IS
Pulsed Drain Current (t = 100 µs)
TC = 25 °C
TA = 25 °C
1.4
Continuous Source-Drain Diode Current
0.8 a,b
1.7
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
1.1
PD
Maximum Power Dissipation
W
0.96 a,b
0.62 a,b
- 55 to 150
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
100
Maximum
130
Unit
Maximum Junction-to-Ambient a,c
t 5 s
Steady State
°C/W
RthJF
Maximum Junction-to-Foot (Drain)
60
75
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2356DS
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
40
V
V
DS Temperature Coefficient
43
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
- 3.8
VDS = VGS , ID = 250 µA
0.6
10
1.5
100
1
V
IGSS
VDS = 0 V, VGS
=
12 V
nA
VDS = 40 V, VGS = 0 V
DS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
VGS 10 V, ID = 3.2 A
VGS 4.5 V, ID = 3.1 A
VGS 2.5 V, ID = 2 A
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
10
ID(on)
0.042
0.045
0.056
13
0.051
0.054
0.070
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
VDS = 15 V, ID = 3.2 A
S
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
370
50
V
DS = 20 V, VGS = 0 V, f = 1 MHz
pF
17
V
DS = 20 V, VGS = 10 V, ID = 3.2 A
8.1
3.8
0.72
0.81
0.7
6
13
Qg
Total Gate Charge
5.7
nC
Qgs
Qgd
Rg
Gate-Source Charge
V
DS = 20 V, VGS = 4.5 V, ID = 3.2 A
f = 1 MHz
Gate-Drain Charge
Gate Resistance
0.2
1.4
12
20
20
12
20
78
27
80
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
12
VDD = 20 V, RL = 7.7
ID 2.6 A, VGEN = 10 V, Rg = 1
Turn-Off Delay Time
13
Fall Time
6
ns
Turn-On Delay Time
10
Rise Time
52
VDD = 20 V, RL = 7.7
ID 2.6 A, VGEN = 4.5 V, Rg = 1
Turn-Off Delay Time
18
Fall Time
53
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current (t = 100 µs)
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
1.4
20
A
IS = 2.6 A, VGS 0 V
0.8
12
5
1.2
20
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
10
IF = 2.6 A, dI/dt = 100 A/µs, TJ = 25 °C
8.5
3.5
ns
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2356DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
4
3
2
1
0
20
15
10
5
VGS = 10 V thru 3 V
VGS = 2.5 V
TC = 25 °C
VGS = 2 V
TC = 125 °C
TC = - 55 °C
0
0
0.5
1
1.5
2
0
1
2
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.07
0.06
0.05
0.04
0.03
510
408
306
204
102
0
VGS = 2.5 V
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
5
10
15
20
0
10
20
30
40
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.9
10
VGS = 10 V, 3.2A
ID = 3.2 A
VDS = 20 V
8
6
4
2
0
1.55
1.2
VGS = 4.5 V, 3.1A
VDS = 10 V
VGS = 2.5 V, 2A
VDS = 32 V
0.85
0.5
0
2.2
4.4
6.6
8.8
- 50 - 25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
3
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2356DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.120
0.100
0.080
0.060
0.040
0.020
0.000
ID = 3.2A
TJ = 125 °C
TJ = 150 °C
TJ = 25 °C
TJ = 25 °C
0.1
0
2
4
6
8
10
0.0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
20
10
0
1.4
1.22
1.04
0.86
0.68
0.5
ID = 250 μA
- 50 - 25
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
10
1
Limited by RDS(on)
*
100 μs
1 ms
10 ms
0.1
100 ms
10s, 1 s
DC,
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
10
0.001
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2356DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
4.8
3.6
2.4
1.2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
2
1.5
1
0.9
0.72
0.54
0.36
0.18
0
0.5
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TA - Ambient Temperature (°C)
Power Junction-to-Foot
Power Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
www.vishay.com
5
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si2356DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 175 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
100
1000
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62893.
www.vishay.com
6
For technical questions, contact: pmostechsupport@vishay.com
This document is subject to change without notice.
Document Number: 62893
S13-1814-Rev. A, 12-Aug-13
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E
1
E
1
2
e
S
e
1
D
0.10 mm
0.004"
C
C
0.25 mm
q
A
2
A
Gauge Plane
Seating Plane
Seating Plane
C
A
1
L
L
1
MILLIMETERS
INCHES
Dim
Min
0.89
0.01
Max
1.12
0.10
Min
0.035
0.0004
Max
0.044
0.004
A
A1
A2
0.88
0.35
0.085
2.80
2.10
1.20
1.02
0.50
0.18
3.04
2.64
1.40
0.0346
0.014
0.003
0.110
0.083
0.047
0.040
0.020
0.007
0.120
0.104
0.055
b
c
D
E
E1
e
0.95 BSC
1.90 BSC
0.0374 Ref
e1
0.0748 Ref
L
0.40
0.60
8°
0.016
0.024
8°
L1
0.64 Ref
0.50 Ref
0.025 Ref
0.020 Ref
S
q
3°
3°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SOT-23
0.037
0.022
(0.950)
(0.559)
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72609
Revision: 21-Jan-08
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25
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Revision: 09-Jul-2021
Document Number: 91000
1
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