SI7465DP_13 [VISHAY]
P-Channel 60-V (D-S) MOSFET; P通道60 -V （D -S ）的MOSFET
| 型号： | SI7465DP_13 |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 60-V (D-S) MOSFET |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7465DP
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)
- 5
Qg (Typ.)
Available
TrenchFET® Power MOSFET
New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
0.064 at VGS = - 10 V
0.080 at VGS = - 4.5 V
•
•
- 60
26
- 4.5
PowerPAK SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
S
4
D
8
D
G
7
D
6
D
5
Bottom View
D
Ordering Information:
Si7465DP-T1-E3 (Lead (Pb)-free)
Si7465DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 s
Steady State
- 60
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
TA = 25 °C
TA = 70 °C
- 5
- 4
- 3.2
- 2.6
Continuous Drain Current (TJ = 150°C)a
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
- 25
A
- 2.9
- 1.2
IAS
EAS
22
L = 0.1 mH
Single Pulse Avalanche Energy
24.2
mJ
W
TA = 25 °C
TA = 70 °C
3.5
2.2
1.5
Maximum Power Dissipationa
PD
0.94
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
27
Maximum
Unit
t ≤ 10 s
Steady State
Steady State
36
85
Maximum Junction-to-Ambienta
RthJA
60
°C/W
Maximum Junction-to-Case (Drain)
RthJC
3.3
4.3
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
1
Si7465DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS(th)
IGSS
VDS = VGS, ID = - 250 µA
Gate Threshold Voltage
- 1.0
- 3.0
100
- 1
V
VDS = 0 V, VGS
=
20 V
Gate-Body Leakage
nA
VDS = - 60 V, VGS = 0 V
DS = - 60 V, VGS = 0 V, TJ = 70 °C
VDS ≤ - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 5 A
IDSS
ID(on)
Zero Gate Voltage Drain Current
µA
A
V
- 10
On-State Drain Currenta
- 25
0.051
0.064
16
0.064
0.080
Drain-Source On-State Resistancea
RDS(on)
Ω
VGS = - 4.5 V, ID = - 4.5 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = - 15 V, ID = - 5 A
IS = - 2.9 A, VGS = 0 V
S
V
VSD
- 0.8
- 1.2
40
Qg
Qgs
Qgd
Rg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
26
4.5
7.0
7.0
8
V
DS = - 30 V, VGS = - 10 V, ID = - 5 A
nC
Ω
td(on)
tr
td(off)
tf
15
15
9
V
DD = - 30 V, RL = 30 Ω
ID ≅ - 1.0 A, VGEN = –10 V, Rg = 6 Ω
Turn-Off Delay Time
Fall Time
65
30
41
100
45
ns
trr
IF = - 5 A, dI/dt = 100 A/µs
Source-Drain Reverse Recovery Time
70
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
= 10 V thru 5 V
4 V
T = 125 °C
C
3 V
25 °C
- 55 °C
0
0
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
DS
V
GS
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
Si7465DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1800
1500
1200
900
600
300
0
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
rss
C
oss
0
5
10
15
20
25
30
0
10
20
30
40
50
60
V
- Drain-to-Source Voltage (V)
I
- Drain Current (A)
DS
D
On-Resistance vs. Drain Current
Capacitance
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
8
V
D
= 10 V
GS
= 5 A
V
D
= 30 V
DS
= 5 A
I
I
4
0
- 50 - 25
0
25
50
75
100 125 150
0
10
20
30
40
50
T
- Junction Temperature (°C)
J
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.30
0.25
0.20
0.15
0.10
0.05
0.00
40
10
T
= 150 °C
J
I
D
= 5 A
T
= 25 °C
J
1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
3
Si7465DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
100
80
I
D
= 250 µA
0.8
0.6
60
0.4
0.2
40
20
0.0
- 0.2
- 0.4
0
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
T
- Temperature (°C)
Time (s)
J
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
10 µs
Limited by R
DS(on)*
10
100 µs
1
1 ms
10 ms
100 ms
1 s
0.1
0.01
10 s
T
= 25 °C
A
100 s, DC
Single Pulse
0.001
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R is specified
DS(on)
GS
GS
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 52 °C/W
thJA
(t)
3. TJM - T = P
4. Surface Mounted
Z
A
DM thJA
Single Pulse
10
0.01
-4
-3
-2
-1
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
Si7465DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73113.
Document Number: 73113
S09-0271-Rev. C, 16-Feb-09
www.vishay.com
5
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8, (Single/Dual)
L
H
E2
K
E4
W
1
1
2
3
4
Z
2
3
4
D
L1
E3
A1
Backside View of Single Pad
L
H
K
E2
E4
2
E1
E
Detail Z
1
2
3
4
D1
D2
Notes
1. Inch will govern.
E3
2
Dimensions exclusive of mold gate burrs.
Backside View of Dual Pad
3. Dimensions exclusive of mold flash and cutting burrs.
MILLIMETERS
INCHES
NOM.
0.041
DIM.
MIN.
NOM.
1.04
MAX.
1.12
0.05
0.51
0.33
5.26
5.00
3.91
1.68
MIN.
0.038
0
MAX.
0.044
0.002
0.020
0.013
0.207
0.197
0.154
0.066
A
0.97
A1
-
-
b
0.33
0.23
5.05
4.80
3.56
1.32
0.41
0.013
0.009
0.199
0.189
0.140
0.052
0.016
c
0.28
0.011
D
5.15
0.203
D1
4.90
0.193
D2
3.76
0.148
D3
1.50
0.059
D4
0.57 typ.
3.98 typ.
6.15
0.0225 typ.
0.157 typ.
0.242
D5
E
6.05
5.79
3.30
3.48
3.68
6.25
5.99
3.66
3.84
3.91
0.238
0.228
0.130
0.137
0.145
0.246
0.236
0.144
0.151
0.154
E1
5.89
0.232
E2 (for AL product)
3.48
0.137
E2 (for other product)
3.66
0.144
E3
3.78
0.149
E4 (for AL product)
0.58 typ.
0.75 typ.
1.27 BSC
1.45 typ.
1.27 typ.
-
0.023 typ.
0.030 typ.
0.050 BSC
0.057 typ.
0.050 typ.
-
E4 (for other product)
e
K (for AL product)
K (for other product)
K1
H
0.56
0.51
0.51
0.06
0°
-
0.022
0.020
0.020
0.002
0°
-
0.61
0.71
0.71
0.20
12°
0.024
0.028
0.028
0.008
12°
L
0.61
0.024
L1
0.13
0.005
-
-
W
M
0.15
0.25
0.36
0.006
0.010
0.014
0.125 typ.
0.005 typ.
ECN: C13-0702-Rev. K, 20-May-13
DWG: 5881
Revison: 20-May-13
Document Number: 71655
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® SO-8 Single
0.260
(6.61)
0.150
(3.81)
0.024
(0.61)
0.026
(0.66)
0.050
(1.27)
0.032
(0.82)
0.040
(1.02)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Document Number: 72599
Revision: 21-Jan-08
www.vishay.com
15
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
相关型号：
SI7470DP-T1-E3
Power Field-Effect Transistor, 40A I(D), 8V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8
VISHAY
©2020 ICPDF网 联系我们和版权申明