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SUB75N08-10-E3 [VISHAY]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
SUB75N08-10-E3
型号： SUB75N08-10-E3
厂家： VISHAY    VISHAY
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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SUP/SUB75N08-10  
Vishay Siliconix  
N-Channel 75-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
V(BR)DSS (V)  
rDS(on) (W)  
ID (A)  
a
75  
0.010  
75  
D
TO-220AB  
TO-263  
G
DRAIN connected to TAB  
G
D S  
Top View  
G D  
S
S
N-Channel MOSFET  
SUB75N08-10  
Top View  
SUP75N08-10  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
C
Parameter  
Symbol  
Limit  
Unit  
Gate-Source Voltage  
V
GS  
"20  
V
a
T
= 25_C  
= 125_C  
75  
C
Continuous Drain Current  
(T = 175_C)  
J
I
D
T
C
55  
240  
60  
A
Pulsed Drain Current  
Avalanche Current  
I
DM  
I
AR  
b
Repetitive Avalanche Energy  
L = 0.1 mH  
E
280  
mJ  
W
AR  
c
T
C
= 25_C (TO-220AB and TO-263)  
187  
Power Dissipation  
P
D
d
T
A
= 25_C (TO-263)  
3.7  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
40  
Unit  
d
PCB Mount (TO-263)  
Junction-to-Ambient  
Junction-to-Case  
R
thJA  
thJC  
Free Air (TO-220AB)  
62.5  
0.8  
_
C/W  
R
Notes  
a. Package limited.  
b. Duty cycle v 1%.  
c. See SOA curve for voltage derating.  
d. When mounted on 1” square PCB (FR-4 material).  
Document Number: 70263  
S-57253—Rev. B, 24-Feb-98  
www.vishay.com S FaxBack 408-970-5600  
2-1  
SUP/SUB75N08-10  
Vishay Siliconix  
Specifications (TJ = 25_C Unless Otherwise Noted)  
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
D
75  
(BR)DSS  
V
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2.0  
3.5  
4.5  
"100  
1
GS(th)  
DS  
GS  
D
I
V
DS  
= 0 V, V = "20 V  
nA  
GSS  
GS  
V
= 75 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
V
V
= 75 V V = 0 V, T = 125_C  
50  
mA  
DSS  
DS  
,
GS  
J
= 75 V, V = 0 V, T = 175_C  
150  
DS  
GS  
J
a
On-State Drain Current  
I
V = 5 V, V = 10 V  
DS GS  
120  
30  
A
D(on)  
V
GS  
= 10 V, I = 30 A  
D
0.0087  
0.010  
0.017  
0.021  
a
Drain-Source On-State Resistance  
r
W
V
GS  
= 10 V, I = 30 A, T = 125_C  
DS(on)  
D
J
V
GS  
= 10 V, I = 30 A, T = 175_C  
D
J
a
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 30 A  
S
D
Dynamicb  
Input Capacitance  
C
4800  
910  
270  
85  
iss  
Output Capacitance  
C
oss  
V
GS  
= 0 V, V = 25 V, f = 1 MHz  
pF  
nC  
DS  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
120  
g
c
Gate-Source Charge  
Q
gs  
Q
gd  
V
DS  
= 30 V V = 10 V, I = 75 A  
31  
,
GS  
D
c
Gate-Drain Charge  
24  
c
Turn-On Delay Time  
t
20  
40  
200  
120  
60  
d(on)  
c
Rise Time  
t
r
95  
V
= 30 V, R = 0.47 W  
L
= 10 V, R = 2.5 W  
GEN G  
DD  
ns  
I
D
^ 75 A, V  
c
Turn-Off Delay Time  
t
65  
d(off)  
c
Fall Time  
t
f
20  
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b  
Continuous Current  
I
75  
240  
1.3  
120  
9
S
A
Pulsed Current  
I
SM  
a
Forward Voltage  
V
SD  
I
F
= 75 A , V = 0 V  
1.0  
80  
V
ns  
A
GS  
Reverse Recovery Time  
t
rr  
RM(REC)  
Peak Reverse Recovery Current  
Reverse Recovery Charge  
I
I
F
= 75 A, di/dt = 100 A/ms  
7
Q
0.28  
0.54  
mC  
rr  
Notes  
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.  
b. Guaranteed by design, not subject to production testing.  
c. Independent of operating temperature.  
Document Number: 70263  
S-57253—Rev. B, 24-Feb-98  
www.vishay.com S FaxBack 408-970-5600  
2-2  
SUP/SUB75N08-10  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
250  
200  
150  
100  
50  
200  
V
GS  
= 10 V  
9 V  
8 V  
7 V  
150  
100  
50  
6 V  
T
= 125_C  
C
4 V  
25_C  
5 V  
8
–55_C  
0
0
0
2
4
6
10  
0
2
4
6
8
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
120  
100  
80  
60  
40  
20  
0
0.012  
0.010  
0.008  
0.006  
0.004  
0.002  
0
T
C
= –55_C  
25_C  
V
GS  
= 10 V  
125_C  
V
GS  
= 20 V  
0
20  
V
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
– Gate-to-Source Voltage (V)  
GS  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
16  
12  
8
V
= 30 V  
= 75 A  
DS  
I
D
C
iss  
4
C
oss  
C
rss  
0
0
10  
20  
30  
40  
50  
60  
0
25  
50  
Q – Total Gate Charge (nC)  
g
75  
100  
125  
150  
175  
V
– Drain-to-Source Voltage (V)  
DS  
Document Number: 70263  
S-57253—Rev. B, 24-Feb-98  
www.vishay.com S FaxBack 408-970-5600  
2-3  
SUP/SUB75N08-10  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.5  
2.0  
1.5  
1.0  
0.5  
0
100  
V
= 10 V  
= 30 A  
GS  
I
D
T = 150_C  
J
T = 25_C  
J
10  
1
–50 –25  
0
25  
50  
75 100 125 150 175  
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
J
– Junction Temperature (_C)  
– Source-to-Drain Voltage (V)  
SD  
THERMAL RATINGS  
Maximum Avalanche and Drain Current  
vs. Case Temperature  
Safe Operating Area  
500  
100  
100  
80  
60  
40  
20  
0
Limited  
by r  
DS(on)  
10 ms  
100 ms  
1 ms  
10  
1
10 ms  
100 ms  
dc  
T
= 25_C  
C
Single Pulse  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
T
C
– Case Temperature (_C)  
V
DS  
– Drain-to-Source Voltage (V)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.05  
0.02  
Single Pulse  
0.01  
–5  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
Square Wave Pulse Duration (sec)  
10  
1
3
Document Number: 70263  
S-57253—Rev. B, 24-Feb-98  
www.vishay.com S FaxBack 408-970-5600  
2-4  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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