SUB75N08-10 [VISHAY]
N-Channel 75-V (D-S), 175C MOSFET; N沟道75 - V（D -S）， 175℃下的MOSFET
| 型号： | SUB75N08-10 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 75-V (D-S), 175C MOSFET |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
75
0.010
75
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
N-Channel MOSFET
SUB75N08-10
Top View
SUP75N08-10
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V
GS
"20
V
a
T
= 25_C
= 125_C
75
C
Continuous Drain Current
(T = 175_C)
J
I
D
T
C
55
240
60
A
Pulsed Drain Current
Avalanche Current
I
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
280
mJ
W
AR
c
T
C
= 25_C (TO-220AB and TO-263)
187
Power Dissipation
P
D
d
T
A
= 25_C (TO-263)
3.7
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
40
Unit
d
PCB Mount (TO-263)
Junction-to-Ambient
Junction-to-Case
R
thJA
thJC
Free Air (TO-220AB)
62.5
0.8
C/W
R
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-1
SUP/SUB75N08-10
Vishay Siliconix
Specifications (TJ = 25_C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
V
GS
= 0 V, I = 250 mA
D
75
(BR)DSS
V
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2.0
3.5
4.5
"100
1
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "20 V
nA
GSS
GS
V
= 75 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
V
V
= 75 V V = 0 V, T = 125_C
50
mA
DSS
DS
,
GS
J
= 75 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V = 5 V, V = 10 V
DS GS
120
30
A
D(on)
V
GS
= 10 V, I = 30 A
D
0.0087
0.010
0.017
0.021
a
Drain-Source On-State Resistance
r
W
V
GS
= 10 V, I = 30 A, T = 125_C
DS(on)
D
J
V
GS
= 10 V, I = 30 A, T = 175_C
D
J
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 30 A
S
D
Dynamicb
Input Capacitance
C
4800
910
270
85
iss
Output Capacitance
C
oss
V
GS
= 0 V, V = 25 V, f = 1 MHz
pF
nC
DS
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
120
g
c
Gate-Source Charge
Q
gs
Q
gd
V
DS
= 30 V V = 10 V, I = 75 A
31
,
GS
D
c
Gate-Drain Charge
24
c
Turn-On Delay Time
t
20
40
200
120
60
d(on)
c
Rise Time
t
r
95
V
= 30 V, R = 0.47 W
L
= 10 V, R = 2.5 W
GEN G
DD
ns
I
D
^ 75 A, V
c
Turn-Off Delay Time
t
65
d(off)
c
Fall Time
t
f
20
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
75
240
1.3
120
9
S
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 75 A , V = 0 V
1.0
80
V
ns
A
GS
Reverse Recovery Time
t
rr
RM(REC)
Peak Reverse Recovery Current
Reverse Recovery Charge
I
I
F
= 75 A, di/dt = 100 A/ms
7
Q
0.28
0.54
mC
rr
Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-2
SUP/SUB75N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
150
100
50
200
V
GS
= 10 V
9 V
8 V
7 V
150
100
50
6 V
T
= 125_C
C
4 V
25_C
5 V
8
–55_C
0
0
0
2
4
6
10
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
120
100
80
60
40
20
0
0.012
0.010
0.008
0.006
0.004
0.002
0
T
C
= –55_C
25_C
V
GS
= 10 V
125_C
V
GS
= 20 V
0
20
V
40
60
80
100
0
20
40
60
80
100
– Gate-to-Source Voltage (V)
GS
I
D
– Drain Current (A)
Capacitance
Gate Charge
7000
6000
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 30 V
= 75 A
DS
I
D
C
iss
4
C
oss
C
rss
0
0
10
20
30
40
50
60
0
25
50
Q – Total Gate Charge (nC)
g
75
100
125
150
175
V
– Drain-to-Source Voltage (V)
DS
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-3
SUP/SUB75N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
2.0
1.5
1.0
0.5
0
100
V
= 10 V
= 30 A
GS
I
D
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
500
100
100
80
60
40
20
0
Limited
by r
DS(on)
10 ms
100 ms
1 ms
10
1
10 ms
100 ms
dc
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
T
C
– Case Temperature (_C)
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–5
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
2-4
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