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SUD50N03-11 [VISHAY]

N-Channel 30-V (D-S) 175C MOSFET; N通道30 -V （ D- S） 175℃ MOSFET
SUD50N03-11
型号： SUD50N03-11
厂家： VISHAY    VISHAY
描述：

N-Channel 30-V (D-S) 175C MOSFET
N通道30 -V （ D- S） 175℃ MOSFET

晶体 晶体管 功率场效应晶体管
文件： 总4页 (文件大小：62K)
中文：  中文翻译
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SUD50N03-11  
Vishay Siliconix  
New Product  
N-Channel 30-V (D-S) 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)a  
0.011 @ V = 10 V  
50  
43  
GS  
30  
0.017 @ V = 4.5 V  
GS  
D
TO-252  
G
Drain Connected to Tab  
G
D
S
Top View  
Order Number:  
SUD50N03-11  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
"20  
50  
DS  
GS  
V
V
T
= 25_C  
= 100_C  
C
b
Continuous Drain Current (T = 175_C)  
I
J
D
T
C
37  
A
Pulsed Drain Current  
I
100  
50  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
c
T
= 25_C  
= 25_C  
62.5  
C
Maximum Power Dissipation  
P
D
W
b
T
A
7.5  
Operating Junction and Storage Temperature Range  
T , T  
–55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
17  
50  
2
20  
60  
b
Junction-to-Ambient  
R
thJA  
Steady State  
_
C/W  
_C/W  
Junction-to-Case  
Junction-to-Lead  
R
thJC  
2.4  
4.8  
R
4
thJL  
Notes  
a. Package Limited.  
b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec.  
c. See SOA curve for voltage derating.  
Document Number: 71187  
S-01329—Rev. B, 12-Jun-00  
www.vishay.com S FaxBack 408-970-5600  
1
SUD50N03-11  
New Product  
Vishay Siliconix  
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
V
= 0 V, I = 250 mA  
D
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V
30  
GS  
(BR)DSS  
V
V
V
DS  
= V , I = 250 mA  
0.8  
GS(th)  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
1
nA  
mA  
A
GSS  
V
= 24 V, V = 0 V  
GS  
DS  
Zero Gate Voltage Drain Current  
I
DSS  
V
= 24 V, V = 0 V, T = 125_C  
V
50  
DS  
GS  
J
b
On-State Drain Current  
I
= 5 V, V = 5 V  
50  
10  
D(on)  
DS  
GS  
V
= 10 V, I = 25 A  
0.009  
0.014  
0.011  
0.018  
0.017  
GS  
D
b
Drain-Source On-State Resistance  
r
V
= 5 V, I = 20 A, T = 125_C  
V
W
DS(on)  
GS  
D
J
= 4.5 V, I = 15 A  
D
GS  
b
Forward Transconductance  
g
fs  
V
= 15 V, I = 20 A  
S
DS  
D
Dynamica  
Input Capacitance  
C
C
1130  
400  
175  
12  
4
iss  
V
= 0 V, V = 25 V, F = 1 MHz  
DS  
Output Capacitance  
pF  
nC  
GS  
oss  
Reverse Transfer Capacitance  
C
rss  
c
Total Gate Charge  
Q
20  
g
c
Gate-Source Charge  
Q
V
= 15 V, V = 5 V, I = 50 A  
DS GS D  
gs  
gd  
c
Gate-Drain Charge  
Q
4.5  
8
c
Turn-On Delay Time  
t
t
12  
15  
30  
9
d(on)  
c
Rise Time  
t
10  
18  
6
r
V
DD  
= 15 V, R = 0.3 W  
L
ns  
I
^ 50 A, V  
= 10 V, R = 2.5 W  
GEN G  
c
D
Turn-Off Delay Time  
d(off)  
c
Fall Time  
t
f
Source-Drain Diode Ratings and Characteristic (TC = 25_C)  
Continuous Current  
I
50  
S
A
Pulsed Current  
I
80  
1.5  
50  
SM  
b
Diode Forward Voltage  
V
I
= 100 A, V = 0 V  
V
SD  
F
GS  
Source-Drain Reverse Recovery Time  
t
rr  
I
F
= 50 A, di/dt = 100 A/ms  
30  
ns  
Notes  
a. Guaranteed by design, not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
c. Independent of operating temperature.  
Document Number: 71187  
S-01329—Rev. B, 12-Jun-00  
www.vishay.com S FaxBack 408-970-5600  
2
SUD50N03-11  
Vishay Siliconix  
New Product  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
200  
160  
120  
80  
100  
V
GS  
= 10 thru 8 V  
7 V  
T
C
= –55_C  
80  
60  
40  
20  
0
6 V  
5 V  
25_C  
125_C  
4 V  
40  
3 V  
2 V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
6
V
DS  
– Drain-to-Source Voltage (V)  
V
GS  
– Gate-to-Source Voltage (V)  
Transconductance  
On-Resistance vs. Drain Current  
60  
50  
40  
30  
20  
10  
0
0.04  
0.03  
0.02  
0.01  
0
T
C
= –55_C  
25_C  
125_C  
V
GS  
= 4.5 V  
V
GS  
= 10 V  
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
I
D
– Drain Current (A)  
I
D
– Drain Current (A)  
Capacitance  
Gate Charge  
2000  
1600  
1200  
800  
400  
0
10  
8
V
= 15 V  
= 50 A  
DS  
I
D
C
iss  
6
4
C
oss  
C
rss  
2
0
0
5
10  
15  
20  
25  
30  
0
4
8
12  
Q – Total Gate Charge (nC)  
g
16  
20  
V
DS  
– Drain-to-Source Voltage (V)  
Document Number: 71187  
S-01329—Rev. B, 12-Jun-00  
www.vishay.com S FaxBack 408-970-5600  
3
SUD50N03-11  
New Product  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)  
On-Resistance vs. Junction Temperature  
Source-Drain Diode Forward Voltage  
2.0  
1.6  
1.2  
0.8  
0.4  
0
100  
10  
1
V
= 10 V  
= 25 A  
GS  
I
D
T = 150_C  
J
T = 25_C  
J
–50 –25  
0
25  
50  
75 100 125 150 175  
0
0.3  
V
0.6  
0.9  
1.2  
1.5  
T
J
– Junction Temperature (_C)  
– Source-to-Drain Voltage (V)  
SD  
THERMAL RATINGS  
Maximum Avalanche Drain Current vs.  
Case Temperature  
Safe Operating Area  
500  
60  
50  
40  
30  
20  
10  
0
Limited  
by r  
DS(on)  
100  
10  
1
10 ms  
100 ms  
10 ms  
100 ms  
1 s  
dc  
T
= 25_C  
C
Single Pulse  
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
V
DS  
– Drain-to-Source Voltage (V)  
T
C
– Case Temperature (_C)  
Normalized Thermal Transient Impedance, Junction-to-Case  
2
1
Duty Cycle = 0.5  
0.2  
0.1  
0.1  
0.02  
0.05  
Single Pulse  
0.01  
–4  
–3  
–2  
–1  
10  
10  
10  
10  
Square Wave Pulse Duration (sec)  
1
10  
30  
Document Number: 71187  
S-01329—Rev. B, 12-Jun-00  
www.vishay.com S FaxBack 408-970-5600  
4

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