V40100P-E3/45 [VISHAY]

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V at IF = 5 A; 双高压Trench MOS势垒肖特基整流器超低VF = 0.372 V在IF = 5 A
V40100P-E3/45
型号: V40100P-E3/45
厂家: VISHAY    VISHAY
描述:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V at IF = 5 A
双高压Trench MOS势垒肖特基整流器超低VF = 0.372 V在IF = 5 A

整流二极管 高压
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中文:  中文翻译
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New Product  
V40100P  
Vishay General Semiconductor  
Dual High-Voltage Trench MOS Barrier Schottky Rectifier  
Ultra Low V = 0.372 V at I = 5 A  
F
F
FEATURES  
• Trench MOS Schottky technology  
TMBS®  
• Low forward voltage drop, low power  
losses  
• High efficiency operation  
• Low thermal resistance  
• Solder dip 260 °C, 40 s  
3
2
1
TO-247AD (TO-3P)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PIN 2  
PIN 1  
PIN 3  
CASE  
TYPICAL APPLICATIONS  
For use in high frequency inverters, switching power  
supplies, freewheeling diodes, OR-ing diode, dc-to-dc  
converters and reverse battery protection.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
2 x 20 A  
VRRM  
100 V  
300 A  
0.60 V  
150 °C  
Case: TO-247AD (TO-3P)  
IFSM  
Epoxy meets UL 94V-0 flammability rating  
VF at IF = 20 A  
TJ max.  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for commercial grade, meets JESD 201 class  
1A whisker test  
Polarity: As marked  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V40100P  
UNIT  
Maximum repetitive peak reverse voltage  
VRRM  
100  
V
per device  
Maximum average forward rectified current (Fig. 1)  
per diode  
40  
20  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
per diode  
IFSM  
300  
superimposed on rated load  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dV/dt  
1.0  
A
V
10 000  
Operating junction and storage temperature range  
TJ, TSTG  
- 40 to + 150  
°C  
Document Number: 88939  
Revision: 27-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1
New Product  
V40100P  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
TYP.  
MAX.  
UNIT  
100  
Breakdown voltage  
I
R = 1.0 mA  
TJ = 25 °C  
TJ = 25 °C  
VBR  
-
V
IF = 5 A  
IF = 10 A  
IF = 20 A  
0.461  
0.525  
0.652  
-
-
0.73  
Instantaneous forward voltage per diode (1)  
VF  
V
IF = 5 A  
IF = 10 A  
IF = 20 A  
0.372  
0.443  
0.595  
-
-
TJ = 125 °C  
0.67  
TJ = 25 °C  
TJ = 125 °C  
11.5  
8.0  
500  
15  
µA  
mA  
VR = 70 V  
Reverse current per diode (2)  
IR  
TJ = 25 °C  
TJ = 125 °C  
60.6  
20.2  
1000  
45  
µA  
mA  
V
R = 100 V  
Notes:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
(2) Pulse test: Pulse width 40 ms  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
V40100P  
UNIT  
Typical thermal resistance per diode  
RθJC  
1.5  
°C/W  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
V40100P-E3/45  
6.056  
45  
30/tube  
Tube  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
TJ = TJ Max.  
8.3 ms Single Half Sine-Wave  
0
0
25  
50  
75  
100  
125  
150  
175  
10  
100  
1
Case Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
Document Number: 88939  
Revision: 27-May-08  
New Product  
V40100P  
Vishay General Semiconductor  
100  
10  
10 000  
TJ = 150 °C  
TJ = 125 °C  
1000  
TJ = 100 °C  
1
TJ = 25 °C  
0.1  
100  
0.1  
1
10  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics Per Diode  
Figure 5. Typical Junction Capacitance Per Diode  
100  
10  
TJ = 150 °C  
TJ = 125 °C  
10  
TJ = 100 °C  
1
1
0.1  
TJ = 25 °C  
0.01  
0.001  
0.1  
0.01  
10  
20  
30  
40  
50  
60  
70  
80  
90 100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t - Pulse Duration (s)  
Figure 4. Typical Reverse Characteristics Per Diode  
Figure 6. Typical Transient Thermal Impedance Per Diode  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-247AD (TO-3P)  
0.245 (6.2)  
0.225 (5.7)  
0.645 (16.4)  
0.625 (15.9)  
0.203 (5.16)  
0.193 (4.90)  
0.078 (1.98) REF.  
0.323 (8.2)  
0.313 (7.9)  
30°  
10  
0.170  
(4.3)  
10° TYP.  
0.840 (21.3)  
0.820 (20.8)  
Both Sides  
0.142 (3.6)  
0.138 (3.5)  
1
2
3
1° REF.  
Both Sides  
0.086 (2.18)  
0.076 (1.93)  
0.118 (3.0)  
0.108 (2.7)  
0.127 (3.22)  
0.117 (2.97)  
0.160 (4.1)  
0.140 (3.5)  
0.795 (20.2)  
0.775 (19.6)  
0.030 (0.76)  
0.020 (0.51)  
0.225 (5.7)  
0.205 (5.2)  
0.048 (1.22)  
0.044 (1.12)  
PIN 2  
CASE  
PIN 1  
PIN 3  
Document Number: 88939  
Revision: 27-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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