概述
数据手册CR05AS-8-T14#F01 概述
400V - 0.5A - Thyristor Low Power Use
CR05AS-8-T14#F01 数据手册
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PDF下载CR05AS-8
Thyristor
Low Power Use
REJ03G0348-0300
Rev.3.00
Mar 22, 2007
Features
•
•
•
IT (AV) : 0.5 A
VDRM : 400 V
•
•
Non-Insulated Type
Planar Passivation Type
I
GT : 100 µA
Outline
RENESAS Package code: PLZZ0004CA-A
RENESAS Package code: PCB-A
(
Package name: UPAK)
(
Package name: SOT-89)
2, 4
1. Cathode
3
4
2
1
2. Anode
3. Gate
4. Anode
1
2
3
3
4
1
Applications
Solid state relay, strobe flasher, igniter, and hybrid IC
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
8 (Mark CD)
400
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
VRRM
VRSM
V
V
V
V
V
500
VR (DC)
VDRM
320
400
VD (DC)
320
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 1 of 8
CR05AS-8
Parameter
Symbol
IT (RMS)
IT (AV)
Ratings
0.79
Unit
A
Conditions
RMS on-state current
Average on-state current
0.5
A
Commercial frequency, sine half wave
180° conduction, Ta = 57°CNote2
Surge on-state current
I2t for fusing
ITSM
I2t
10
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
0.4
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.1
W
W
V
0.01
6
6
0.1
V
A
– 40 to +125
– 40 to +125
50
°C
°C
mg
Tstg
—
Mass
Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Rated value
Parameter
Symbol
Unit
Test conditions
Min.
—
Typ.
—
Max.
0.1
Repetitive peak reverse current
Repetitive peak off-state current
IRRM
IDRM
mA
mA
Tj = 125°C, VRRM applied
—
—
0.1
Tj = 125°C, VDRM applied,
RGK = 1 kΩ
On-state voltage
VTM
VGT
VGD
IGT
—
—
—
—
—
—
—
—
1.9
0.8
V
V
Ta = 25°C, ITM = 1.5 A,
instantaneous value
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Tj = 25°C, VD = 6 V,
IT = 0.1 ANote4
0.2
20
—
—
V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
100Note3
3
µA
mA
Tj = 25°C, VD = 6 V,
IT = 0.1 ANote4
IH
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Thermal resistance
Rth (j-a)
—
70
°C/W Junction to ambientNote2
Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm).
3. If special values of IGT are required, choose item E from those listed in the table below if possible.
Item
B
E
IGT (µA)
20 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
4. IGT, VGT measurement circuit.
60Ω
A1
I
I
GS
GT
TUT
A3
A2
6V
DC
3V
DC
V1
R
GK
1
2
V
1kΩ
Switch
GT
Switch 1 : I
measurement
measurement
(Inner resistance of voltage meter is about 1kΩ)
GT
Switch 2 : V
GT
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 2 of 8
CR05AS-8
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
5
10
9
8
7
6
5
4
3
2
1
0
Ta = 25°C
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1
2
3
4
5
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
103
7
5
102
7
Typical Example
5
3
2
3
2
V
P
= 6V
P
= 0.1W
GM
FGM
101
7
102
7
5
3
2
5
= 0.01W
G(AV)
3
2
V
GT
= 0.8V
100
7
I
= 100µA
GT
(Tj = 25°C)
5
3
2
101
7
5
10–1
7
5
V
= 0.2V
I
= 0.1A
GD
FGM
3
2
3
2
100
–60 –40–20
10–2
10–22 3 5710–12 3 571002 3 571012 3 57102
0 20 40 60 80 100 120140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
1.0
7
5
25
Aluminum Board
×
25
×
t0.7
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
3
2
Distribution
102
7
5
Typical Example
3
2
101
7
5
3
2
100
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Time (s)
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 3 of 8
CR05AS-8
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
1.5
160
140
120
100
80
25×25×t0.7
Aluminum Board
θ = 30° 60° 90°120°
180°
θ
360°
1.0
0.5
Resistive,
inductive loads
Natural convection
60
θ
θ = 30°
90°
180°
40
360°
60° 120°
20
Resistive,
inductive loads
0
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.2
0.4
0.6
0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
160
140
120
100
80
25×25×t0.7
Aluminum Board
1.5
90°
θ = 30° 60° 120°
θ
θ
360°
180°
Resistive loads
Natural convection
1.0
0.5
0
60
40
θ
θ
60°
120°
0.6
360°
Resistive loads
θ = 30°
90°
180°
20
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.2
0.4
0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
160
140
120
100
80
90° 180°
θ = 30° 60° 120° 270°
25×25×t0.7
Aluminum Board
1.5
θ
DC
360°
Resistive, inductive loads
Natural convection
1.0
0.5
0
60
DC
θ
40
θ = 30° 60°
120°
90°
0.4
270°
180°
0.6
360°
20
Resistive,
inductive loads
0
0
0.2
0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 4 of 8
CR05AS-8
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
160
140
120
100
80
120
100
80
60
40
20
0
Typical Example
Typical Example
Tj = 125°C
R
= 1kΩ
GK
60
40
20
0
–40–20 0 20 40 60 80 100120140160
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
120
102
7
Tj = 25°C
5
I
I
(25°C) = 1mA
(25°C) = 25µA
H
100
80
60
40
20
0
3
2
GT
101
7
Distribution
5
# 2
# 1
3
2
Typical Example
100
7
5
Typical Example
# 1 I (25°C = 10µA)
# 2 I (25°C = 66µA)
GT
3
2
GT
Tj = 125°C, R
= 1kΩ
GK
10–1
100 2 3 5 7101 2 3 5 7 102 2 3 5 7 10 3
–60–40–20 0 20 40 60 80 100120140
Rate of Rise of Off-State Voltage (V/µs)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Repetitive Peak Reverse Voltage vs.
Junction Temperature
500
160
Typical Example
(25°C) I (1kΩ)
Typical Example
I
GT
13µA
59µA
H
140
120
100
80
# 1
# 2
1.6mA
1.8mA
400
300
200
# 1
# 2
60
40
100
0
20
Tj = 25°C
0
–40–20 0 20 40 60 80 100120140160
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 5 of 8
CR05AS-8
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
(25°C)
# 1
# 2
I
GT
5
4
# 1
# 2
10µA
66µA
3
2
102
7
5
4
3
2
Tj = 25°C
101
100
2 3 4 5 7 101
102
2 3 4 5 7
Gate Current Pulse Width (µs)
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 6 of 8
CR05AS-8
Package Dimensions
Package Name
UPAK
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CA-A
Previous Code
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
4.5 0.1
1.8 Max
1.5 0.1
(1.5)
0.44 Max
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CB-A
Package Name
SOT-89
MASS[Typ.]
0.48g
Unit: mm
4.6Max
1.6 0.2
1.5 0.1
0.4 +–00..0053
0.58Max
1.5
3.0
0.48Max
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 7 of 8
CR05AS-8
Order Code
Lead form
Standard order
code example
Standard packing
Quantity
Standard order code
Surface-mounted type Taping
4000 Type name – ET +Direction (1 or 2) + 4 CR05AS-8-ET14
Note : Please confirm the specification about the shipping in detail.
REJ03G0348-0300 Rev.3.00 Mar 22, 2007
Page 8 of 8
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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Colophon .7.0
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| CR05AS-8_10 | RENESAS | Thyristor Low Power Use | 获取价格 |
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