IGBT
分类：
其他晶体管
射频双极晶体管
IGBT
小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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| 图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
| 6MBI50PC-120 |  |
IGBT | Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel |  |
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| 6MBI50PC-120L | |
IGBT | Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel | |
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6MBI50S-120 | |
IGBT | IGBT(1200V/50A) | |
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| 6MBI50S-120L | |
IGBT | IGBT(1200V/6x50A) | |
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| 6MBI50S-I20 | |
IGBT | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, M623, 17 PIN | |
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| 6MBI50VA-060-50 | |
IGBT | IGBT MODULE (V series) 600V / 50A / 6 in one package IGBT模块（ V系列） 600V / 50A / 6在一个封装 |
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6MBI50VA-120-50 | |
IGBT | IGBT MODULE IGBT模块 |
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6MBI50VW-060-50 | |
IGBT | IGBT MODULE IGBT模块 |
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6MBI50VW-120-50 | |
IGBT | IGBT MODULE IGBT模块 |
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| 6MBI75-060 | |
IGBT | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES | |
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| 6MBI75F-060 | |
IGBT | IGBT(600V 75A) IGBT （ 600V 75A ） |
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| 6MBI75L-060 | |
IGBT | IGBT(600V/75A) | |
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| 6MBI75PC-120 | |
IGBT | Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel | |
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| 6MBI75S-060 | |
IGBT | IGBT Module IGBT模块 |
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6MBI75S-120 | |
IGBT | IGBT(1200V/75A) | |
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| 6MBI75S-140-01 | |
IGBT | IGBT Module IGBT模块 |
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6MBI75U2A-060 | |
IGBT | IGBT module IGBT模块 |
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6MBI75U4A-120 | |
IGBT | IGBT MODULE IGBT模块 |
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6MBI75U4B-120 | |
IGBT | 13IGBT MODULE 13IGBT模块 |
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6MBI75UB-120 | |
IGBT | IGBT Module IGBT模块 |
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6MBI75UC-120 | |
IGBT | IGBT Module U-Series 1200V / 75A 6 in one-package 在一个封装的IGBT模块U系列1200V / 75A 6 |
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6MBI75VA-060-50 | |
IGBT | IGBT MODULE IGBT模块 |
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6MBI75VA-120-50 | |
IGBT | IGBT MODULE IGBT模块 |
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6MBI75VW-060-50 | |
IGBT | IGBT MODULE IGBT模块 |
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6MBI75VW-120-50 | |
IGBT | IGBT MODULE IGBT模块 |
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| 6MBI8F-120 | |
IGBT | IGBT(1200V 8A) IGBT （ 1200V 8A ） |
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| 6MBI8L-120 | |
IGBT | IGBT(1200V 8A) IGBT （ 1200V 8A ） |
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| 6MBP100RTE060 | |
IGBT | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | |
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| 6MBP50NA060-01 | |
IGBT | IGBT-IPM IGBT -IPM |
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| 6MBP50RTE060 | |
IGBT | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel | |
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IGBT 热门型号
- SEMIX404GB12E4S
- SEMIX303GD12E4C
- SEMIX223GD12E4C
- SEMIX151GB12E4S
- SEMIX151GAL12E4S
- SEMIX202GB12E4S
- SEMIX101GD12E4S
- RJP4301APP-00-T2
- RJK6085DPK-00-T0
- RJH60F7ADPK-00-T0
- RJH60D3DPE-00-J3
- RJH60F5DPK-00-T0
- RJH60D2DPP-M0-T2
- RJH60C9DPD-00-J2
- RJH60D7DPK-00-T0
- RJH60D6DPK-00-T0
- PTMB75E6C
- PTMB75E6
- PTMB75A6C
- PTMB50E6C
- PTMB50E6
- PTMB50A6C
- PTMB150E6C
- PTMB150E6
- PRHMB75E6
- PRHMB600E6
- PRHMB400E6
- PRHMB300A6
- PRHMB150E6C
- PRHMB150E6
- PRHMB100E6
- PRHMB100B12A
- PRHMB100B12
- PRFMB300E6C
- PRFMB200E6
- PRFMB150E6C
- PRHMB600E6C
- PRHMB400B12
- PRHMB300E6C
- PRHMB300E6
- PRHMB300A6C
- PRHMB200E6
- PRHMB200A6A
- PRFMB50E6
- PRFMB300E6
- PRFMB150E6
- PRFMB100E6
- PM1200HCE330-1
- PHMB800BS12
- PHMB600E6C
- PHMB600E6
- PHMB600BS12
- PHMB50B12CL
- PHMB400E6
- PHMB300BS12
- PDMB800E6
- PDMB600E6C
- PDMB600E6
- PDMB600BS12
- PDMB50E6
- PDMB400E6
- PDMB400BS12C
- PDMB400BS12
- PDMB300BS12C
- PDMB300BS12
- PDMB200E6
- PDMB200BS12C
- PDMB200BS12
- PDMB100BS12
- PCHMB600E6C
- PCHMB600E6
- PCHMB50E6
- PCHMB400E6
- PCHMB150E6C
- PCHMB150E6
- PCHMB100E6
- PCFMB600E6C
- PCFMB600E6
- PCFMB400E6
- PCFMB300E6C
- PCFMB300E6
- PCFMB200E6
- PCFMB150E6C
- PCFMB150E6
- PBMB200E6
- PBMB200B12
- PBMB100E6
- PHMB600BS12C
- IXGH48N60B3C1
- IXGH30N60C3C1
- IRGP4069D-EPBF
- IRG7PH46UPBF
- IRG7PH46UD-EP
- IRGP50B60PD1-EP
- IRGP4069DPBF
- IRGP35B60PD-EP
- IRGI4060DPBF
- IRG7PH46UDPBF
- IRGP4069PBF
- IRGI4062DPBF
什么是IGBT
- IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）是一种复合全控型电压驱动式功率半导体器件，由双极型三极管（BJT）和绝缘栅型场效应管（MOS）组成。 它结合了MOSFET的高输入阻抗和电力晶体管（GTR）的低导通压降的优点，具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统，如交流电机、变频器、开关电源、照明电路、牵引传动等领域。