IGBT
分类：
其他晶体管
射频双极晶体管
IGBT
小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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| 图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
| 6MBP75NA060-01 |  |
IGBT | IGBT-IPM IGBT -IPM |
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| 6MBP75RTE060 | |
IGBT | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel | |
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| 6MBP80RTB060 | |
IGBT | Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, P610, 22 PIN | |
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| 6MS10017E41W36460 | |
IGBT | Insulated Gate Bipolar Transistor, |  |
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6MS10017E41W36460BOSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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6MS16017P43W40382 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6MS16017P43W40382NOSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6MS16017P43W40383NOSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6MS20017E43W37032NOSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6PS04012E4DG36022 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6PS04012E4DG36022NOSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6PS04512E43G37986 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6PS04512E43W39693NOSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6PS18012E4FG35689 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6PS18012E4FG35689NWSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 6PS18012E4FG38393 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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6PS18012E4FG38393NWSA1 | |
IGBT | Insulated Gate Bipolar Transistor, | |
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6R1MBI100P-160 | |
IGBT | Diode Module with Brake 与制动二极管模块 |
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6R1MBI75P-160 | |
IGBT | Diode Module with Brake 与制动二极管模块 |
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7MBI100N-060 | |
IGBT | IGBT(600V/100A) | |
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| 7MBI40N-120 | |
IGBT | IGBT(1200V/40A) | |
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7MBI75N-060 | |
IGBT | IGBT(600V/75A) | |
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| 7MBP100NA060-01 | |
IGBT | IGBT-IPM IGBT -IPM |
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| 7MBP100RTE060 | |
IGBT | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | |
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| 7MBP150RTA060 | |
IGBT | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, P611, 22 PIN | |
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| 7MBP150RTE060 | |
IGBT | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel | |
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| 7MBP50NA060-01 | |
IGBT | IGBT-IPM IGBT -IPM |
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7MBP50RTA060 | |
IGBT | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, P610, 22 PIN | |
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| 7MBP50RTE060 | |
IGBT | Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel | |
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| 7MBP75RTE060 | |
IGBT | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel | |
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IGBT 热门型号
- IRG7PH46U-EP
- IRG4PC50F-EPBF
- IRG6S320UPBF
- IHW30N160R2
- IKW15N120T2
- IKI04N60T
- IHW25N120R2
- IGW30N60T
- IGW30N100T
- PCHMB400B12A
- IKW40N120T2
- SEMIX303GD12T4C
- SEMIX452GAR126HDS
- SEMIX452GAL126HDS
- SEMIX452GAL126HD
- SEMIX402GAR066HDS
- SEMIX402GAL066HDS
- SEMIX553GB128DS
- SEMIX553GB128D
- SEMIX653GAR176HDS
- SEMIX653GAR176HD
- SKIIP28ANB16V2
- SKIIP26NBB126V10
- SKIIP39ANB16V2
- SKIIP39AC126V2
- APTGT75X120TE3
- APTGT75X120BTP3
- APTGT75TA60PG
- APTGT75TA120PG
- APTGT75SK120TG
- APTGT75SK120T
- APTGT75H60T3G
- APTGT75H60T3G
- APTGT75H120TG
- APTGT75H120T
- APTGT75DU120TG
- APTGT75DU120T
- APTGT75DSK60T3G
- APTGT75DSK60T3
- APTGT75A120TG
- APTGT75A120T
- APTGT75A120D1
- APTGT600U170D4G
- APTGT600SK60G
- APTGT600SK60
- APTGT600DU60G
- APTGT600DU60
- APTGT600A60G
- APTGT50X120BTP3
- APTGT50TA60PG
- APTGT50TA60P
- APTGT50SK120TG
- APTGT50SK120TG
- APTGT50H120TG
- APTGT50H120T3G
- APTGT50DU170T
- APTGT50DU120TG
- APTGT50DU120T
- APTGT50DSK60T3G
- APTGT50DSK120T3G
- APTGT50DSK120T3
- APTGT50DH60TG
- APTGT50DH120TG
- APTGT50DDA120T3G
- APTGT50DDA120T3
- APTGT50DA170T
- APTGT50A170T
- APTGT50A120T
- APTGT50A120D1
- APTGT450SK60G
- APTGT450SK60
- APTGT450DU60G
- APTGT450DU60
- APTGT450A60G
- APTGT450A60
- APTGT400U170D4G
- APTGT400SK120G
- APTGT400DU120
- APTGT400A120G
- APTGT400A120
- APTGT30H60T3G
- APTGT30H60T3
- APTGT30DSK60T3G
- APTGT30DSK60T3
- APTGT300U170D4G
- APTGT300U120D4
- APTGT300SK60G
- APTGT300SK60
- APTGT300SK120G
- APTGT300DU60G
- APTGT300DU60
- APTGT300DU170G
- APTGT300DU120G
- APTGT300DA170G
- APTGT300DA170D3
- APTGT300DA120D3
- APTGT300A60G
- APTGT300A60
- APTGT300A170G
- APTGT300A170
什么是IGBT
- IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）是一种复合全控型电压驱动式功率半导体器件，由双极型三极管（BJT）和绝缘栅型场效应管（MOS）组成。 它结合了MOSFET的高输入阻抗和电力晶体管（GTR）的低导通压降的优点，具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统，如交流电机、变频器、开关电源、照明电路、牵引传动等领域。