IGBT
分类：
其他晶体管
射频双极晶体管
IGBT
小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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| 图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
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1MBC10D-060 |  |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBC15-060 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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| 1MBG05D-060 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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| 1MBG10D-060 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBH03D-120 | |
IGBT | Ratings and characterisitcs Fuji IGBT 评级和characterisitcs富士IGBT |
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| 1MBH03D-120-S06TT | |
IGBT | Insulated Gate Bipolar Transistor, | |
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1MBH05D-060 | |
IGBT | Ratings and characteristics of Fuji IGBT 评级和富士IGBT的特性 |
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1MBH05D-120 | |
IGBT | Ratings and characteristics of Fuji IGBT 评级和富士IGBT的特性 |
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| 1MBH05D-120-S06TT | |
IGBT | Insulated Gate Bipolar Transistor, | |
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1MBH08D-120 | |
IGBT | Ratings and characteristics of Fuji IGBT 评级和富士IGBT的特性 |
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1MBH10D-060 | |
IGBT | Ratings and characteristics of Fuji IGBT 评级和富士IGBT的特性 |
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| 1MBH10D-060-S06TT | |
IGBT | Insulated Gate Bipolar Transistor, | |
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| 1MBH10D-120 | |
IGBT | Ratings and characteristics of Fuji IGBT 评级和富士IGBT的特性 |
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| 1MBH10D-120-S06TT | |
IGBT | Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, | |
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1MBH15-120 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBH15D-060 | |
IGBT | 600V / 15A Molded Package 600V / 15A塑模封装 |
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1MBH15D-120 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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| 1MBH15D-120S06TT | |
IGBT | Insulated Gate Bipolar Transistor, | |
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1MBH20D-060 | |
IGBT | 600V / 20A Molded Package 600V / 20A塑模封装 |
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| 1MBH20D-060-S06TT | |
IGBT | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel | |
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1MBH25-120 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBH25D-120 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBH30D-060 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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| 1MBH30D-060-S06TT | |
IGBT | Insulated Gate Bipolar Transistor, | |
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1MBH50-060 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBH50D-060 | |
IGBT | Fuji Discrete Package IGBT 富士分立IGBT封装 |
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1MBH50D-060S | |
IGBT | Ratings and characteristics of Fuji IGBT 评级和富士IGBT的特性 |
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1MBH75D-060S | |
IGBT | Ratings and characteristics of Fuji IGBT 评级和富士IGBT的特性 |
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| 1MBI1000UG-330 | |
IGBT | DISCON | |
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| 1MBI1000VXB-170EH-50 | |
IGBT | Insulated Gate Bipolar Transistor | |
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IGBT 热门型号
- ISL9V2540S3ST_NL
- IRGVH50FUPBF
- IRGSL6B60KDPBF
- IRGBC20K-STRRPBF
- IRG4RC10KTRL
- IRGPC30KD2-E
- IRGMC40UDPBF
- IRGMC40FDPBF
- IRGBC20M-STRR
- IRGS6B60KDTRLPBF
- IRGBC30MD2-STRL
- IRGBC30KD2-STRL
- IRGS6B60KTRRPBF
- IRGS15B60KDTRR
- IRG4PH20K-EPBF
- IRG4BC40WSTRLPBF
- IRG4BC30U-STRRPBF
- IRG4RC10UDTRR
- IRG4RC20FTRLPBF
- IRGPC40S-E
- IRGPC40F-EPBF
- IRG4PC50S-PPBF
- IRG4PH40UD-EPBF
- IRGPS40B120UDPBF
- IRGPC40K-EPBF
- IRGBC30MD2-STRLPBF
- IRGS6B60KDPBF
- IRGBC30K-STRLPBF
- IRG4RC10KTRR
- IRG4PC50S-EPBF
- IRGSL4B60KPBF
- IRGMIC50UUPBF
- IRG4BC30W-STRLPBF
- IRG4BC20KD-STRL
- IRG4BC10SD-STRLPBF
- IRG4CH40KBPBF
- IRG4RC10KDTRPBF
- IRGVH50FDPBF
- IRGSL6B60KDTRL
- IRGSL4B60KD1TRL
- IRGPF50U
- IRGPC20KD2-E
- IRGBC40K-STRL
- IRG4PC50UHR
- IRGSL4B60KD1TRR
- IRGP35B60PD-E
- IRGP20B120U-EPBF
- IRGBC40K-STRRPBF
- IRG4RC10UDTRRPBF
- IRG4BC20SD-STRLPBF
- IRG4RC20FTRR
- IRGPC30MD2-EPBF
- IRG4BC20SD-STRL
- IRG4BC20K-STRR
- IRGMC50FDPBF
- IRGMVC50UPBF
- IRGIH50FUPBF
- IRGBC20SD2-EPBF
- IRGBC20K-STRLPBF
- IRG4BC20MD-STRLPBF
- IRG4RC10STRRPBF
- IRG4PC50FD-E
- IRG4BC20UD-SPBFTRR
- IRGB4B60KD1TRR
- IRG4BC15UD-STRRPBF
- IRG4BC15UD-STRLPBF
- IRG4BC30K-STRRPBF
- IKW40N120T2XK
- IKD15N60RFXT
- IHW30N90TXK
- IGA03N120H2XK
- IHW40T120XK
- IKD15N60RFA
- IKD15N60RA
- IGW30N100TXK
- HGTP20N60A4_NL
- HGTG20N60C3DR
- HGTG20N60B3D_NL
- HGTG12N60A4D_NL
- HGTP12N60C3DR
- HGTP7N60B3D_NL
- HGTP12N60C3_NL
- HGTP12N60A4D_NL
- HGTG30N60B3D_NL
- GT20D201-O
- GB05XP120KT
- GA100NA60UPBF
- FZ400R12KS4P
- FS25R12W1T4P
- FP50R12KT4P
- FP10R12W1T4P
- FMG2G300US60_NL
- FGH50N6S2_NL
- FGB40N6S2_NL
- FF900R12IP4V
- FGPF70N30TTU
- FF650R17IE4P
- FGL60N170DTU_NL
- FGA180N30DTU
- FF450R12KE4_E
什么是IGBT
- IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）是一种复合全控型电压驱动式功率半导体器件，由双极型三极管（BJT）和绝缘栅型场效应管（MOS）组成。 它结合了MOSFET的高输入阻抗和电力晶体管（GTR）的低导通压降的优点，具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统，如交流电机、变频器、开关电源、照明电路、牵引传动等领域。