IGBT
分类：
其他晶体管
射频双极晶体管
IGBT
小信号双极晶体管
功率场效应晶体管
功率双极晶体管
小信号场效应晶体管
射频小信号双极晶体管
单结晶体管
射频小信号场效应晶体管
射频场效应晶体管
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| 图片 | 型号 | 文档 | 类别 | 描述 | 品牌 | 供应商 | |
| 1MBI1000VXB-170EH-54 |  |
IGBT | Insulated Gate Bipolar Transistor |  |
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| 1MBI1000VXB-170EL-50 | |
IGBT | Insulated Gate Bipolar Transistor, |  |
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| 1MBI1000VXB-170EL-50 | |
IGBT | 1-Pack(1 in 1) M272 | |
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| 1MBI1000VXB-170EL-54 | |
IGBT | Insulated Gate Bipolar Transistor, 1400A I(C), 1700V V(BR)CES, N-Channel, MODULE-12 | |
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| 1MBI100U4F-120L-50 | |
IGBT | IGBT MODULE (U series) 1200V / 100A / 1 in one package IGBT模块（ U系列） 1200V / 100A / 1在一个封装 |
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| 1MBI1200U4C-120 | |
IGBT | IGBT MODULE IGBT模块 |
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1MBI1200U4C-170 | |
IGBT | IGBT MODULE IGBT模块 |
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| 1MBI1500UE-330 | |
IGBT | DISCON | |
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1MBI150NH-060 | |
IGBT | IGBT MODULE IGBT模块 |
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| 1MBI150NK-060 | |
IGBT | IGBT MODULE ( N series ) IGBT模块（ N系列） |
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| 1MBI150VA-120L-50 | |
IGBT | Insulated Gate Bipolar Transistor | |
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1MBI1600U4C-120 | |
IGBT | IGBT MODULE IGBT模块 |
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1MBI1600U4C-170 | |
IGBT | IGBT MODULE IGBT模块 |
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| 1MBI200F-120 | |
IGBT | IGBT MODULE(F series) IGBT模块（ F系列） |
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| 1MBI200HH-120L-50 | |
IGBT | IGBT MODULE 1200V / 200A / 1 in one package IGBT模块1200V / 200A / 1在一个封装 |
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| 1MBI200L-120 | |
IGBT | IGBT MODULE(L series) IGBT模块（L系列） |
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| 1MBI200NA-120 | |
IGBT | IGBT MODULE ( N series ) IGBT模块（ N系列） |
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| 1MBI200NB-120 | |
IGBT | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel | |
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1MBI200NH-060 | |
IGBT | IGBT MODULE ( N series ) IGBT模块（ N系列） |
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1MBI200NK-060 | |
IGBT | IGBT MODULE ( N series ) IGBT模块（ N系列） |
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1MBI200S-120 | |
IGBT | IGBT MODULE 1200V / 200A / 1 in one package IGBT模块1200V / 200A / 1在一个封装 |
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| 1MBI200SH-140 | |
IGBT | Insulated Gate Bipolar Transistor | |
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1MBI200U4H-120L-50 | |
IGBT | IGBT MODULE (U series) 1200V / 200A / 1 in one package IGBT模块（ U系列） 1200V / 200A / 1在一个封装 |
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| 1MBI2400U4C-170 | |
IGBT | Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, M143, 9 PIN | |
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1MBI2400U4D-120 | |
IGBT | IGBT MODULE IGBT模块 |
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1MBI2400U4D-170 | |
IGBT | IGBT MODULE IGBT模块 |
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| 1MBI2400VC-120P | |
IGBT | Insulated Gate Bipolar Transistor | |
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| 1MBI2400VD-120P | |
IGBT | DISCON | |
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| 1MBI2400VD-170E | |
IGBT | Insulated Gate Bipolar Transistor | |
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| 1MBI2400VR-170E | |
IGBT | Insulated Gate Bipolar Transistor | |
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IGBT 热门型号
- FF400R12KT3P_E
- FB10R06W1E3ENG
- DF900R12IP4DV
- CPV362M4FPBF
- BSM400GA120DLCS
- APTGF350DA60
- APTGT75H60T3
- APTGF15X60RTP2G
- APTGF50H60T3
- APTGF50H60T3
- APT20GF120BRG
- APT50GS60BR(G)
- APT50GP60SG
- APT15GT60KRG
- APT44GA60SD30C
- APT15GP60BG
- APT30GP60BSC
- APT30GP60BSC
- APT30GP60BG
- APT20GS60KR(G)
- APT15GT120SR
- APT15GT60BRG
- APT12GT60BRG
- 7MBR30SA060E
- 40MT120UHT
- 40MT120UHTA
- 2MBI300N-120-01D
- 2MBI200NB-120-01B
- 2MBI400N-060-01A
- 2MBI300N-120-01B
- 2MBI300N-060-04D
- 2MBI400N-060-01C
- 2MBI300N-120-01A
- 2MBI300N-060-04A
- 2MBI300N-060-04C
- 2MBI200N-060-03F
- 2MBI200N-060-03C
- 2MBI300N-120-01E
- 2MBI300NB-060-01B
- 2MBI300NB-060-01D
- 2MBI300N-120-01F
- 2MBI200N-060-03D
- 25MT060WFPBF
- 232GDL120-410CTVU
- 20MT120UFPBF
- 1602GB061-459CTVU
- SGR15N40LTM
- IRG4PH50UD-E
- IRG4BC30W-STRR
- FP25R12W2T4P
- IGW30N60TP
- IRGMC40FUPBF
- SEMIX302GAL066HDS
- SGF40N60UFTU
- AP50G60SW
- SSG55N60NTX
- IRG4PF50WD-E
- FGP30N6S2D_NL
- IRGBC30MD2-STRRPBF
- 132GH120-212CTVU
- IRGBC30M-STRLPBF
- APTGT150DH60T
- SGB02N120XT
- IHW25N120R2XK
- HGTP7N60C3D_NL
- HGTP2N120CN_NL
- IRG4BC30W-STRRPBF
- SGH5N120RUFDTU
- FF150R12MS4GENG
- IRG4PH40U-EPBF
- IRG4BC30S-STRLPBF
- PDMB200B12
- HGT1S12N60A4DS_NL
- HGT1S14N36G3VLST
- 302GD061-359CTVU
- IRGIH50FDPBF
- FGW15N40
- FMG2G300US60E_NL
- IRG4PC50S-E
- FF450R12KE4P
- IRG4PH40UD2-EPPBF
- IRGBC20MD2-STRR
- FF1000R17IE4F
- SGL60N90DG3TU
- SGU6N60UFTU
- FGH50N6S2D_NL
- SIGC15T60SE
- GT15J103SM
- FF450R17ME4P
- IRGP20B60PD-E
- GA200HS60SPBF
- APT30GT60KRG
- IRGBC20KD2-STRL
- SGP5N60RUFDTU
- IRGBC30M-STRL
- SIGC03T60SE
- SIGC39T60E
- 232GDL120-410CTVF
- FP25R12W2T4ENG
- SGH15N120RUFTU
什么是IGBT
- IGBT（Insulated Gate Bipolar Transistor，绝缘栅双极型晶体管）是一种复合全控型电压驱动式功率半导体器件，由双极型三极管（BJT）和绝缘栅型场效应管（MOS）组成。 它结合了MOSFET的高输入阻抗和电力晶体管（GTR）的低导通压降的优点，具有驱动功率小、饱和压降低、开关速度快等特点。IGBT非常适合应用于直流电压为600V及以上的变流系统，如交流电机、变频器、开关电源、照明电路、牵引传动等领域。