AP73T03AGH-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP73T03AGH-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP73T03AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
BVDSS
RDS(ON)
ID
30V
9.5mΩ
50A
D
S
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
Description
AP73T03A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
D
S
TO-252(H)
The TO-252 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow technique
and suited for high current application due to the low connection
resistance.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
ID@TC=25℃
ID@TC=100℃
IDM
50
A
31.7
A
120
A
PD@TC=25℃
PD@TA=25℃
TSTG
Total Power Dissipation
Total Power Dissipation3
41.6
W
W
℃
℃
2
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
Units
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
3
Rthj-a
62.5
Data & specifications subject to change without notice
1
201301291
AP73T03AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
VGS=10V, ID=30A
GS=4.5V, ID=20A
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
30
-
-
-
-
-
V
9.5
16
mΩ
mΩ
Static Drain-Source On-Resistance2
RDS(ON)
V
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=30A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=20A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
7
11.2
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=24V
1.4
3.5
7
-
-
-
-
-
-
VGS=4.5V
VDS=15V
ID=20A
55
17
3
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
VGS=10V
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
630 1000
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=25V
180
60
-
-
f=1.0MHz
f=1.0MHz
3.2
6.4
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
IS=30A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
16
3
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP73T03AGH-HF
120
100
80
60
40
20
0
120
100
80
60
40
20
0
T C =150 o C
T C =25 o C
10V
7.0V
6.0V
10V
7.0V
6.0V
5.0V
5.0V
V G = 4.0V
V G =4.0V
0
2
4
6
8
10
12
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
11
10
9
2.0
1.6
1.2
0.8
0.4
I D =20A
I D =30A
C =25 o C
V
G =10V
T
Ω
8
7
-50
0
50
100
150
2
4
6
8
10
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
30
20
10
0
I D =1mA
T j =150 o C
T j =25 o C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP73T03AGH-HF
f=1.0MHz
8
1000
800
600
400
200
0
I D =30A
V
DS =24V
6
4
2
0
C iss
C oss
C rss
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
100
10
Duty factor = 0.5
0.2
Operation in this area
0.1
limited by R
DS(ON)
0.1
100us
0.05
PDM
t
0.02
1ms
T
0.01
Duty Factor = t/T
T C =25 o C
Peak Tj = PDM x Rthjc + TC
10ms
100ms
DC
Single Pulse
Single Pulse
0.01
1
0.00001
0.0001
0.001
0.01
0.1
1
10
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
60
40
20
0
60
50
40
30
20
10
0
V DS =5V
T j =150 o C
T j =25 o C
T j = -40 o
C
0
2
4
6
25
50
75
100
125
150
T C , Case Temperature ( o C )
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4
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