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AP73T03AGMT-HF [A-POWER]

Simple Drive Requirement, SO-8 Compatible with Heatsink; 简单的驱动要求， SO- 8兼容散热器
AP73T03AGMT-HF
型号： AP73T03AGMT-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Simple Drive Requirement, SO-8 Compatible with Heatsink
简单的驱动要求， SO- 8兼容散热器

驱动
文件： 总4页 (文件大小：128K)
中文：  中文翻译
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AP73T03AGMT-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
30V  
9mΩ  
59A  
▼ SO-8 Compatible with Heatsink  
▼ Low On-resistance  
G
▼ RoHS Compliant & Halogen-Free  
D
D
D
D
Description  
AP73T03A series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
S
S
S
G
The PMPAK ® 5x6 ppackage is special for voltage conversion application  
using standard infrared reflow technique with the backside heat sink to  
achieve the good thermal performance.  
PMPAK® 5x6  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
30  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current (Chip), VGS @ 10V  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TA=25℃  
ID@TA=70℃  
IDM  
59  
A
18.6  
A
14.9  
A
160  
A
PD@TC=25℃  
PD@TA=25℃  
EAS  
Total Power Dissipation  
50  
W
W
mJ  
℃
℃
Total Power Dissipation  
5
Single Pulse Avalanche Energy4  
Storage Temperature Range  
Operating Junction Temperature Range  
28.8  
TSTG  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient3  
2.5  
25  
Rthj-a  
Data and specifications subject to change without notice  
1
201203291  
AP73T03AGMT-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=20A  
VGS=0V, ID=250uA  
30  
-
-
-
-
-
V
9
mΩ  
mΩ  
VGS=4.5V, ID=20A  
-
16  
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=VGS, ID=250uA  
VDS=10V, ID=20A  
VDS=24V, VGS=0V  
VGS=+20V, VDS=0V  
ID=20A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40  
-
3
V
gfs  
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
10  
-
+100  
Qg  
10  
3
16  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=15V  
VGS=4.5V  
6
-
VDS=15V  
9
-
ID=1A  
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
23  
8
-
VGS=10V  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
790 1264  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=15V  
250  
160  
1.9  
-
-
f=1.0MHz  
f=1.0MHz  
3.8  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=20A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
21  
13  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.  
4.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω , IAS=24A.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP73T03AGMT-HF  
120  
100  
80  
60  
40  
20  
0
160  
120  
80  
40  
0
C =25 o C  
T C = 150 o  
C
10V  
7.0V  
6.0V  
10V  
7.0V  
6.0V  
T
5.0V  
5.0V  
V G = 4.0V  
V G = 4.0V  
0
2
4
6
8
10  
12  
0
2
4
6
8
10  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
12  
10  
8
1.8  
I D =20A  
I D = 20 A  
T
C =25 o C  
V
G =10V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
Ω
6
4
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
30  
24  
18  
12  
6
1.6  
1.2  
0.8  
0.4  
0.0  
I D =1mA  
T j =150 o C  
T j =25 o C  
0
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP73T03AGMT-HF  
f=1.0MHz  
1000  
800  
600  
400  
200  
0
10  
I D = 20 A  
V
DS =15V  
8
6
4
2
0
C iss  
C oss  
C rss  
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
29  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
1000  
100  
10  
Duty factor=0.5  
0.2  
0.1  
Operation in this area  
limited by R  
100us  
DS(ON)  
0.1  
0.05  
PDM  
t
1ms  
0.02  
T
0.01  
Duty factor = t/T  
10ms  
100ms  
DC  
T C =25 o C  
Peak Tj = PDM x Rthjc + Tc  
Single Pulse  
Single Pulse  
0.01  
1
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
80  
100  
80  
60  
40  
20  
0
V DS =5V  
60  
40  
20  
0
T j =150 o C  
T j =25 o C  
T j =-40 o  
C
25  
50  
75  
100  
125  
150  
0
1
2
3
4
5
6
T C , Case Temperature ( o C )  
V GS , Gate-to-Source Voltage (V)  
Fig 11. Transfer Characteristics  
Fig 12. Maximum Continuous Drain Current  
v.s. Case Temperature  
4

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