AP73T03AGM-HF [A-POWER]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | AP73T03AGM-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总4页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP73T03AGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
BVDSS
RDS(ON)
ID
30V
D
D
D
▼ Simple Drive Requirement
9.5mΩ
12.5A
D
▼ Fast Switching Characteristic
G
S
▼ RoHS Compliant & Halogen-Free
S
S
SO-8
Description
D
S
AP73T03A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
G
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
Absolute Maximum Ratings
Symbol
Parameter
Rating
30
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
12.5
A
10
A
50
A
PD@TA=25℃
TSTG
Total Power Dissipation
2.5
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
50
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201304231
AP73T03AGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=10V, ID=12A
VGS=0V, ID=250uA
30
-
-
-
-
-
V
9.5
16
mΩ
mΩ
VGS=4.5V, ID=6A
-
VGS(th)
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=10V, ID=12A
VDS=24V, VGS=0V
VGS=+20V, VDS=0V
ID=12A
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
3
V
gfs
-
S
IDSS
IGSS
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
10
-
+100
Qg
6
9.6
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=15V
1.5
3
-
-
-
-
-
-
VGS=4.5V
VDS=15V
8
ID=1A
9
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
21
7
VGS=10V
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
630 1008
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=15V
220
70
-
-
f=1.0MHz
f=1.0MHz
3.1
6.2
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
IS=2.1A, VGS=0V
IS=10A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
17
10
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP73T03AGM-HF
120
100
80
60
40
20
0
120
100
80
60
40
20
0
T A = 25 o
C
10 V
7.0 V
6.0 V
T A = 150 o
C
10 V
7.0 V
6.0 V
5.0 V
G =4.0V
5.0 V
V G =4.0V
V
0
2
4
6
8
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
14
13
12
11
10
9
1.9
1.4
0.9
0.4
I D = 6 A
I D = 12 A
T
A =25 ℃
V
G =10V
Ω
8
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.2
0.8
0.4
0.0
30
20
10
0
T j =150 o C
T j =25 o C
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
1.2
1.4
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP73T03AGM-HF
f=1.0MHz
6
1200
1000
800
600
400
200
0
I D =12A
V
DS = 15 V
4
2
0
C iss
C oss
C rss
25
0
2
4
6
8
10
1
5
9
13
17
21
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Duty factor=0.5
Operation in this area
100us
limited by R
DS(ON)
0.2
10
1ms
10ms
100ms
1s
0.1
0.1
0.05
1
0.02
0.01
PDM
0.01
t
Single Pulse
T
0.1
Duty factor = t/T
T A =25 o C
DC
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
Single Pulse
0.01
0.001
0.0001
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
14
12
10
8
80
60
40
20
0
V
DS =5V
6
T j =150 o C
4
T j =25 o C
T j =-40 o
2
C
0
25
50
75
100
125
150
0
2
4
6
T A , Ambient Temperature ( o C )
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
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