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AP9938GEO-HF [A-POWER]

Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application; 能够1.8V栅极驱动，优化DC / DC电池应用
AP9938GEO-HF
型号： AP9938GEO-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application
能够1.8V栅极驱动，优化DC / DC电池应用

栅极 电池 栅极驱动
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中文：  中文翻译
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AP9938GEO-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
DUAL N-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
G2  
S2  
▼ Low on-resistance  
BVDSS  
RDS(ON)  
ID  
20V  
18mΩ  
6A  
S2  
D2  
▼ Capable of 1.8V Gate Drive  
G1  
S1  
S1  
TSSOP-8  
D1  
▼ Optimal DC/DC Battery Application  
▼ Halogen Free & RoHS Compliant Product  
Description  
Advanced Power MOSFETs from APEC provide the designer with  
the best combination of fast switching, ruggedized device design,  
ultra low on-resistance and cost-effectiveness.  
D1  
S1  
D2  
S2  
G1  
G2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
20  
Gate-Source Voltage  
+8  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
6
4.8  
A
A
20  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
1
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
125  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
℃/W  
Data and specifications subject to change without notice  
1
201210121  
AP9938GEO-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A  
VGS=0V, ID=250uA  
20  
-
-
-
-
-
V
RDS(ON)  
18  
24  
mΩ  
mΩ  
V
V
GS=2.5V, ID=4A  
GS=1.8V, ID=2A  
-
-
0.3  
-
-
-
28  
mΩ  
V
VGS(th)  
gfs  
IDSS  
IGSS  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge  
VDS=VGS, ID=250uA  
VDS=5V, ID=6A  
VDS=16V, VGS=0V  
VGS=+8V, VDS=0V  
ID=6A  
1
28  
-
-
S
uA  
uA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
-
10  
-
-
+30  
Qg  
-
16  
1.6  
4.3  
7
26  
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
VDS=10V  
-
VGS=4.5V  
-
-
VDS=10V  
-
-
ID=1A  
-
11  
31  
6
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω  
-
-
VGS=5V  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
-
1070 1710  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=10V  
-
130  
115  
1.4  
-
-
f=1.0MHz  
-
f=1.0MHz  
-
2.8  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Forward On Voltage2  
IS=1.2A, VGS=0V  
IS=6A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
14  
4
1.2  
V
Reverse Recovery Time  
Reverse Recovery Charge  
-
-
ns  
nC  
Qrr  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9938GEO-HF  
20  
16  
12  
8
24  
20  
16  
12  
8
T A =25 o C  
5.0V  
4.5V  
3.5V  
5.0V  
4.5V  
3.5V  
T A = 150 o  
C
2.5V  
2.5V  
V G =1.8V  
V G =1.8V  
4
4
0
0
0
1
1
2
2
3
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
20  
18  
16  
14  
I D = 6 A  
I D = 2 A  
V
G = 4.5 V  
T
A =25 ℃  
Ω
1
2
3
4
5
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
2.0  
1.5  
1.0  
0.5  
0.0  
6
4
2
0
I D =250uA  
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9938GEO-HF  
f=1.0MHz  
C iss  
6
1250  
1050  
850  
650  
450  
250  
50  
I D = 6 A  
V DS = 10 V  
5
4
3
2
1
0
C rss  
C oss  
0
4
8
12  
16  
20  
1
5
9
13  
17  
21  
25  
Q G , Total Gate Charge (nC)  
V DS , Drain-to-Source Voltage (V)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
100  
Duty factor=0.5  
0.2  
Operation in this area  
10  
100us  
limited by R  
DS(ON)  
0.1  
0.1  
1ms  
10ms  
100ms  
1s  
0.05  
0.02  
0.01  
1
PDM  
t
0.01  
T
Single Pulse  
0.1  
Duty factor = t/T  
T A =25 o C  
Peak Tj = PDM x Rthja + Ta  
Rthja=208℃/W  
DC  
Single Pulse  
0.001  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
40  
6
5
4
3
2
1
0
V DS =5V  
T j =-40 o  
C
T j =25 o C  
30  
20  
10  
0
T j =150 o C  
0
1
2
3
25  
50  
75  
100  
125  
150  
V GS , Gate-to-Source Voltage (V)  
T A , Ambient Temperature ( o C )  
Fig 11. Transfer Characteristics  
Fig 12. Maximum Continuous Drain  
Current v.s. Ambient Temperature  
4

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