AP9938GEY-HF [A-POWER]
Capable of 1.8V Gate Drive, Lower on-resistance, Surface Mount Package; 能够1.8V栅极驱动,低导通电阻,表面贴装封装![AP9938GEY-HF](http://pdffile.icpdf.com/pdf2/p00210/img/icpdf/AP9938_1189913_icpdf.jpg)
型号: | AP9938GEY-HF |
厂家: | ![]() |
描述: | Capable of 1.8V Gate Drive, Lower on-resistance, Surface Mount Package |
文件: | 总4页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AP9938GEY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
BVDSS
RDS(ON)
ID
20V
16mΩ
7.5A
D1/D2
▼ Lower on-resistance
G2
S2
G1
S1
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
2928-8
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
D1
S1
D2
S2
G1
G2
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
V
VDS
VGS
Drain-Source Voltage
20
+8
Gate-Source Voltage
V
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
7.5
A
6
A
40
A
PD@TA=25℃
TSTG
Total Power Dissipation
1.38
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
TJ
Thermal Data
Symbol
Parameter
Value
90
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
℃/W
Data and specifications subject to change without notice
1
201211302
AP9938GEY-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
VGS=0V, ID=250uA
20
-
-
-
V
RDS(ON)
12.6
14.9
16
22
mΩ
mΩ
VGS=2.5V, ID=4A
-
VGS=1.8V, ID=2A
-
0.3
-
18.5
-
26
mΩ
V
VGS(th)
gfs
IDSS
IGSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
VDS=VGS, ID=250uA
VDS=5V, ID=6A
VDS=16V, VGS=0V
VGS=+8V, VDS=0V
ID=6A
1
28
-
-
S
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
-
10
-
-
+30
Qg
-
16
1.5
4
26
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
VDS=10V
-
VGS=4.5V
-
-
VDS=10V
-
7.5
14
31
6
-
ID=1A
-
-
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω
-
-
VGS=5V
-
-
Ciss
Coss
Crss
Rg
Input Capacitance
VGS=0V
-
1075 1720
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS=10V
-
133
115
1.4
-
-
f=1.0MHz
-
f=1.0MHz
-
2.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
IS=1.1A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
-
-
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
11
4
-
-
ns
nC
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 210 oC/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9938GEY-HF
30
24
18
12
6
25
20
15
10
5
T A =25 o
C
T A = 150 o
C
5.0V
4.5V
3.5V
5.0V
4.5V
3.5V
2.5V
2.5V
V G =2.0V
V G =2.0V
0
0
0
1
2
3
4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
18
16
14
12
1.8
1.4
1.0
0.6
I D =2A
I D =6A
A =25 o
C
V
G =4.5V
T
Ω
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.6
1.2
0.8
0.4
0.0
6
I D =250uA
4
2
0
T j =150 o
C
T j =25 o
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9938GEY-HF
f=1.0MHz
C iss
8
1200
1000
800
600
400
200
0
I D =6A
V DS =10V
6
4
2
0
C oss
C rss
1
5
9
13
17
21
25
0
4
8
12
16
20
24
28
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
10
100us
1ms
0.2
0.1
1
0.1
10ms
100ms
1s
0.05
PDM
t
T
0.1
0.02
Duty factor = t/T
T A =25 o
C
DC
0.01
Peak Tj = PDM x Rthja + Ta
Rthja=210oC/W
Single Pulse
Single Pulse
0.01
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
40
30
20
10
0
V DS =5V
T j = -40 o
C
T j =25 o
C
6
4
2
0
T j =150 o
C
0
1
2
3
25
50
75
100
125
150
T A , Ambient Temperature ( o C )
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4
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AP9950AGH-HF
TRANSISTOR 60 A, 70 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
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