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AP9950GP [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9950GP
型号： AP9950GP
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：108K)
中文：  中文翻译
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AP9950GP  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
70V  
12mΩ  
70A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
through-hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
70  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
ID@TC=25℃  
ID@TC=100℃  
IDM  
70  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
45  
A
240  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
113.6  
-55 to 150  
-55 to 150  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
1.1  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200902061  
AP9950GP  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=40A  
VGS=0V, ID=250uA  
70  
-
-
-
-
-
V
12  
18  
mΩ  
mΩ  
V
GS=4.5V, ID=30A  
-
VGS(th)  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=VGS, ID=250uA  
VDS=10V, ID=30A  
VDS=70V, VGS=0V  
VGS= +20V, VDS=0V  
ID=30A  
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
51  
-
3
V
gfs  
-
S
IDSS  
IGSS  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
25  
-
+100  
Qg  
31  
6
50  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=56V  
VGS=4.5V  
20.5  
10  
8
-
VDS=30V  
-
ID=30A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=3.3Ω,VGS=10V  
RD=1Ω  
39  
22  
-
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
2440 3900  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
285  
185  
1.1  
-
-
f=1.0MHz  
f=1.0MHz  
1.6  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
Min. Typ. Max. Units  
V
VSD  
trr  
IS=40A, VGS=0V  
IS=10A, VGS=0V  
dI/dt=100A/µs  
-
-
-
-
1.3  
ns  
35  
45  
-
-
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9950GP  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
T C = 150 o  
C
10V  
7.0V  
6.0V  
5.0V  
T C = 25 o  
C
10V  
7.0V  
6.0V  
5.0V  
V GS =4.0V  
V GS =4.0V  
40  
0
0
1
2
3
4
5
6
0
2
4
6
8
150  
150  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
18  
16  
14  
12  
10  
8
I D =30A  
C =25 o C  
I D =40A  
V
G =10V  
T
Ω
-50  
0
50  
100  
2
4
6
8
10  
T j , Junction Temperature ( o C)  
V GS Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
40  
30  
20  
10  
0
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9950GP  
f=1.0MHz  
10  
5000  
4000  
3000  
2000  
1000  
0
I D = 30 A  
9
V DS =35V  
DS =42V  
8
7
6
5
4
3
2
1
0
V
V
DS =56V  
C iss  
C oxx  
C rss  
25  
1
5
9
13  
17  
21  
29  
0
10  
20  
30  
40  
50  
60  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
1000  
100  
10  
Duty factor=0.5  
0.2  
0.1  
100us  
1ms  
0.1  
0.05  
PDM  
t
0.02  
T
0.01  
10ms  
100ms  
DC  
T c =25 o C  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
1
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

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