首页 |元器件品牌

AP9952GP-HF [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9952GP-HF
型号： AP9952GP-HF
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件： 总4页 (文件大小：101K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
AP9952GP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
▼ Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
70V  
12mΩ  
68A  
▼ Lower On-resistance  
▼ Fast Switching Characteristic  
G
▼ RoHS Compliant & Halogen-Free  
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
through-hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
70  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
68  
A
43  
A
200  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
104  
W
℃
℃
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
℃/W  
℃/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
1.2  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
201002231  
AP9952GP-HF  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
RDS(ON)  
VGS(th)  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
Static Drain-Source On-Resistance2 VGS=10V, ID=30A  
VGS=0V, ID=250uA  
70  
-
-
-
-
-
12  
4
V
mΩ  
V
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
2
gfs  
Forward Transconductance  
Drain-Source Leakage Current  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
VDS=10V, ID=30A  
VDS=56V, VGS=0V  
VGS= +20V, VDS=0V  
ID=30A  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
36  
-
-
S
IDSS  
IGSS  
Qg  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
25  
-
+100  
35  
8
56  
-
Qgs  
Qgd  
td(on)  
tr  
VDS=56V  
VGS=10V  
16  
10.5  
50  
21  
8.5  
-
VDS=35V  
-
ID=30A  
-
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
RG=1Ω  
-
VGS=10V  
-
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
VGS=0V  
1630 2600  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
VDS=25V  
260  
150  
2
-
-
-
f=1.0MHz  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Forward On Voltage2  
Reverse Recovery Time2  
Test Conditions  
IS=30A, VGS=0V  
IS=10A, VGS=0V  
dI/dt=100A/µs  
Min. Typ. Max. Units  
V
VSD  
trr  
-
-
-
-
1.3  
ns  
33  
43  
-
-
nC  
Qrr  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse test  
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.  
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.  
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED  
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN.  
2
AP9952GP-HF  
200  
160  
120  
80  
120  
100  
80  
60  
40  
20  
0
T C = 150 o  
C
10V  
8.0V  
7.0V  
T C = 25 o  
C
10V  
8.0V  
7.0V  
6.0V  
6.0V  
V GS =5.0V  
V GS =5.0V  
40  
0
0
4
8
12  
16  
20  
24  
0
2
4
6
8
10  
12  
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
1.2  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
I D =30A  
V
G =10V  
1.1  
1
0.9  
0.8  
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
T
, Junction Temperature ( o C)  
j
Fig 3. Normalized BVDSS v.s. Junction  
Temperature  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
1.6  
1.2  
0.8  
0.4  
0.0  
30  
20  
10  
0
T j =150 o C  
T j =25 o C  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3
AP9952GP-HF  
f=1.0MHz  
12  
2400  
2000  
1600  
1200  
800  
400  
0
I D = 30 A  
V DS =56V  
10  
8
6
4
2
0
C iss  
C oxx  
C rss  
1
5
9
13  
17  
21  
25  
29  
0
10  
20  
30  
40  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
1
1000  
100  
10  
Duty factor=0.5  
Operation in this area  
0.2  
0.1  
limited by R  
DS(ON)  
0.1  
100us  
1ms  
0.05  
PDM  
t
0.02  
T
0.01  
T c =25 o C  
10ms  
100ms  
DC  
Duty factor = t/T  
Peak Tj = PDM x Rthjc + TC  
Single Pulse  
Single Pulse  
1
0.01  
0.1  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
10V  
QGS  
QGD  
10%  
VGS  
tr  
td(on)  
td(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4

相关型号：

AP9960AGM-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9960GD

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9960GH

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9960GH-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER

AP9960GH-HF_14

 Simple Drive Requirement
A-POWER

AP9960GJ

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9960GJ-HF

 TRANSISTOR POWER, FET, FET General Purpose Power
A-POWER

AP9960GM-HF

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9960M

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9962AGD

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9962AGH

 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
A-POWER

AP9962AGH-HF

 TRANSISTOR 32 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
©2020 ICPDF网 联系我们和版权申明