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AP9960GD [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9960GD
型号： AP9960GD
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
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AP9960GD  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D2  
▼ Low On-Resistance  
BVDSS  
RDS(ON)  
ID  
40V  
25mΩ  
7A  
D2  
D1  
D1  
▼ Fast Switching Speed  
▼ PDIP-8 Package  
G2  
S2  
PDIP-8  
G1  
S1  
Description  
D1  
D2  
S2  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G2  
G1  
S1  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
40  
± 20  
Gate-Source Voltage  
V
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
7
A
5.6  
A
20  
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
Storage Temperature Range  
2
W
0.016  
-55 to 150  
-55 to 150  
W/℃  
℃
℃
TSTG  
TJ  
Operating Junction Temperature Range  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
℃/W  
Data and specifications subject to change without notice  
200528031  
AP9960GD  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
40  
-
-
0.032  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
Static Drain-Source On-Resistance2 VGS=10V, ID=7A  
VGS=4.5V, ID=5A  
V/℃  
mΩ  
RDS(ON)  
-
25  
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40  
mΩ  
V
VGS(th)  
gfs  
Gate Threshold Voltage  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=70oC)  
Gate-Source Leakage  
Total Gate Charge2  
VDS=VGS, ID=250uA  
VDS=10V, ID=7A  
VDS=40V, VGS=0V  
VDS=32V ,VGS=0V  
VGS= ± 20V  
ID=7A  
3
25  
-
S
IDSS  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
-
1
-
25  
IGSS  
Qg  
-
±100  
14.7  
7.1  
6.8  
11.5  
6.3  
28.2  
12.6  
1725  
235  
145  
-
-
-
-
-
-
-
-
-
-
Qgs  
Qgd  
td(on)  
tr  
Gate-Source Charge  
VDS=20V  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
VGS=4.5V  
VDS=20V  
Rise Time  
ID=1A  
td(off)  
tf  
Turn-off Delay Time  
RG=3.3Ω,VGS=10V  
RD=20Ω  
Fall Time  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
VGS=0V  
VDS=25V  
f=1.0MHz  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
VD=VG=0V , VS=1.3V  
IS=2.3A, VGS=0V  
Min. Typ. Max. Units  
A
V
IS  
Continuous Source Current ( Body Diode )  
-
-
-
-
1.54  
1.3  
VSD  
Forward On Voltage2  
Notes:  
1.Pulse width limited by Max. junction temperature.  
2.Pulse width <300us , duty cycle <2%.  
3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.  
AP9960GD  
36  
24  
12  
0
32  
24  
16  
8
T A =150 o  
C
T A =25 o C  
10V  
6.0V  
5.0V  
4.5V  
10V  
6.0V  
5.0V  
4.5V  
V
GS =4.0V  
V GS =4.0V  
0
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2
80  
60  
40  
20  
0
I D =7.0A  
I D =7.0A  
T
A =25 ℃  
V
GS =10V  
1.4  
0.8  
0.2  
Ω
Ω
Ω
Ω
2
4
6
8
10  
12  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
3.5  
3
1
2.5  
2
Tj=150 o  
C
Tj=25 o C  
0.1  
1.5  
1
0.5  
0.01  
0
0.4  
0.8  
1.2  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C )  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
AP9960GD  
f=1.0MHz  
12  
10000  
1000  
100  
I D =7.0A  
9
6
3
0
V DS =12V  
DS =16V  
Ciss  
V
V
DS =20V  
Coss  
Crss  
10  
1
7
13  
19  
25  
31  
0
5
10  
15  
20  
25  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
1
DUTY=0.5  
0.2  
10  
0.1  
0.1  
1ms  
0.05  
10ms  
100ms  
1s  
0.02  
1
0.0  
PDM  
t
Single Pulse  
0.01  
T
0.1  
Duty factor = t/T  
Peak Tj = PDM x Rthja + Ta  
T A =25 o C  
Rthja=90℃/W  
DC  
Single Pulse  
0.001  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
t , Pulse Width (s)  
V DS , Drain-to-Source Voltage (V)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
t
td(on) tr  
d(off) tf  
Q
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  

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