AP9960GH-HF [A-POWER]
TRANSISTOR POWER, FET, FET General Purpose Power;
| 型号： | AP9960GH-HF |
| 厂家： | 
ADVANCED POWER ELECTRONICS CORP. |
| 描述： | TRANSISTOR POWER, FET, FET General Purpose Power |
| 文件： | 总4页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AP9960GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
S
BVDSS
RDS(ON)
ID
40V
16mΩ
42A
▼ Low Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
G
D
TO-252(H)
TO-251(J)
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP9960GJ) are
available for low-profile applications.
G
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
Units
V
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
+20
V
Continuous Drain Current, VGS @ 10V
ID@TC=25℃
ID@TC=100℃
IDM
42
A
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
26
A
195
A
PD@TC=25℃
Total Power Dissipation
45
W
Linear Derating Factor
0.36
W/℃
℃
℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Value
2.8
Units
℃/W
℃/W
℃/W
Rthj-c
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Maximum Thermal Resistance, Junction-ambient
Rthj-a
62.5
110
Rthj-a
Data and specifications subject to change without notice
1
201105313
AP9960GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
40
-
-
0.032
-
-
-
V
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
V/℃
mΩ
RDS(ON)
-
16
V
GS=4.5V, ID=18A
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=20A
VDS=40V, VGS=0V
3
Forward Transconductance
30
-
-
S
IDSS
Drain-Source Leakage Current
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
1
Drain-Source Leakage Current (Tj=125oC) VDS=32V ,VGS=0V
-
250
IGSS
Qg
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VGS= +20V, VDS=0V
ID=20A
-
+100
18
6
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
VDS=20V
VGS=4.5V
VDS=20V
12
9
ID=20A
110
23
10
1500
250
180
td(off)
tf
Turn-off Delay Time
Fall Time
RG=3.3Ω,VGS=10V
RD=1Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VSD
trr
Forward On Voltage2
Reverse Recovery Time2
IS=45A, VGS=0V
IS=20A, VGS=0V
dI/dt = 100A/us
-
-
-
-
1.3
V
22
-
-
ns
nC
Qrr
Reverse Recovery Charge
27.4
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9960GH/J-HF
120
80
40
0
200
150
100
50
10V
8.0V
T C =150 o C
10V
8.0V
T C =25 o C
6.0V
6.0V
V G =4.0V
V
G =4.0V
0
0
1
2
3
4
5
6
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
40
30
20
10
0
1.8
1.4
1.0
0.6
I D =20A
I D =20A
T
C =25 ℃
V
G =10V
Ω
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
2.0
1.5
1.0
0.5
100
10
1
T j =150 o C
T j =25 o C
0
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9960GH/J-HF
f=1.0MHz
10000
1000
100
12
I D =20A
10
V
DS =12V
8
6
4
2
0
V
DS =16V
DS =20V
V
C iss
C oss
C rss
1
5
9
13
17
21
25
29
0
10
20
30
40
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
10
1
Duty factor=0.5
0.2
0.1
0.1
10us
0.05
0.02
100us
0.01
0.01
Single Pulse
1ms
T c =25 o C
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
Single Pulse
10ms
100ms
0.001
0.0001
1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
tr
td(on)
td(off)tf
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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TRANSISTOR 32 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
A-POWER
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