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AP9T15GJ [A-POWER]

N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
AP9T15GJ
型号： AP9T15GJ
厂家： ADVANCED POWER ELECTRONICS CORP.    ADVANCED POWER ELECTRONICS CORP.
描述：

N-CHANNEL ENHANCEMENT MODE POWER MOSFET
N沟道增强型功率MOSFET
文件： 总4页 (文件大小：110K)
中文：  中文翻译
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AP9T15GH/J  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
▼ Low Gate Charge  
BVDSS  
RDS(ON)  
ID  
20V  
50mΩ  
12.5A  
D
S
▼ Capable of 2.5V gate drive  
▼ Single Drive Requirement  
▼ RoHS Compliant  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, ultra low on-resistance and  
cost-effectiveness.  
G
D
S
TO-252(H)  
G
D
TO-251(J)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Drain-Source Voltage  
Rating  
20  
Units  
V
VDS  
VGS  
Gate-Source Voltage  
±16  
V
Continuous Drain Current, VGS @ 4.5V  
Continuous Drain Current, VGS @ 4.5V  
Pulsed Drain Current1  
ID@TC=25℃  
ID@TC=100℃  
IDM  
12.5  
8
60  
A
A
A
PD@TC=25℃  
Total Power Dissipation  
12.5  
W
Linear Derating Factor  
Storage Temperature Range  
Operating Junction Temperature Range  
0.1  
-55 to 150  
-55 to 150  
W/℃  
℃
℃
TSTG  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
10  
110  
Units  
℃/W  
℃/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
Data and specifications subject to change without notice  
200908052-1/4  
AP9T15GH/J  
Electrical Characteristics@Tj=25oC(unless otherwise specified)  
Symbol  
BVDSS  
Parameter  
Test Conditions  
VGS=0V, ID=250uA  
Min. Typ. Max. Units  
Drain-Source Breakdown Voltage  
20  
-
-
0.02  
-
-
-
V
ΔBVDSS/ΔTj  
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA  
V/℃  
mΩ  
RDS(ON)  
Static Drain-Source On-Resistance  
VGS=4.5V, ID=6A  
GS=2.5V, ID=5.2A  
-
50  
V
-
0.5  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10  
-
-
-
5
1
2
8
80  
1.5  
-
1
25  
±100  
8
-
-
-
-
-
-
mΩ  
V
S
VGS(th)  
gfs  
IDSS  
Gate Threshold Voltage  
VDS=VGS, ID=250uA  
VDS=5V, ID=10A  
VDS=20V, VGS=0V  
VDS=16V ,VGS=0V  
VGS=±16V  
ID=10A  
VDS=16V  
VGS=4.5V  
VDS=10V  
ID=10A  
RG=3.3Ω,VGS=5V  
RD=1Ω  
VGS=0V  
VDS=20V  
Forward Transconductance  
Drain-Source Leakage Current (Tj=25oC)  
Drain-Source Leakage Current (Tj=150oC)  
uA  
uA  
nA  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
pF  
pF  
pF  
Ω
IGSS  
Gate-Source Leakage  
Total Gate Charge2  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time2  
Rise Time  
Turn-off Delay Time  
Fall Time  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
Qg  
Qgs  
Qgd  
td(on)  
tr  
td(off)  
tf  
Ciss  
Coss  
Crss  
Rg  
55  
10  
3
360 580  
70  
50  
-
-
-
f=1.0MHz  
f=1.0MHz  
1.67  
Source-Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max. Units  
VSD  
trr  
Qrr  
Forward On Voltage2  
IS=10A, VGS=0V  
IS=10A, VGS=0V,  
dI/dt=100A/µs  
-
-
-
-
17  
9
1.3  
-
-
V
ns  
nC  
Reverse Recovery Time2  
Reverse Recovery Charge  
Notes:  
1.Pulse width limited by safe operating area.  
2.Pulse width <300us , duty cycle <2%.  
2/4  
AP9T15GH/J  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
T C =25 o C  
T C = 150 o  
C
5.0V  
4.5V  
5.0V  
4.5V  
3.5V  
3.5V  
2.5V  
2.5V  
V G =1.5V  
V G =1.5V  
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)  
V DS , Drain-to-Source Voltage (V)  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
45  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I D =6A  
I D = 5.2 A  
43  
41  
39  
37  
35  
33  
V
G =4.5V  
T
C =25 o C  
Ω
Ω
Ω
Ω
0
2
4
6
8
10  
-50  
0
50  
100  
150  
T j , Junction Temperature ( o C)  
V GS , Gate-to-Source Voltage (V)  
Fig 3. On-Resistance v.s. Gate Voltage  
Fig 4. Normalized On-Resistance  
v.s. Junction Temperature  
10  
2.0  
1.5  
1.0  
0.5  
0.0  
8
6
T j =150 o C  
T j =25 o C  
4
2
0
-50  
0
50  
100  
150  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
T j , Junction Temperature ( o C)  
V SD , Source-to-Drain Voltage (V)  
Fig 5. Forward Characteristic of  
Reverse Diode  
Fig 6. Gate Threshold Voltage v.s.  
Junction Temperature  
3/4  
AP9T15GH/J  
f=1.0MHz  
C iss  
14  
1000  
100  
10  
I D =10A  
12  
V DS =10V  
10  
8
V
V
DS =12V  
DS =16V  
6
C oss  
C rss  
4
2
0
0
2
4
6
8
10  
12  
1
5
9
13  
17  
21  
25  
29  
V DS , Drain-to-Source Voltage (V)  
Q G , Total Gate Charge (nC)  
Fig 7. Gate Charge Characteristics  
Fig 8. Typical Capacitance Characteristics  
100  
10  
1
1
Duty factor = 0.5  
100us  
1ms  
0.2  
0.1  
0.1  
0.05  
10ms  
100ms  
DC  
0.02  
PDM  
0.01  
t
T
T c =25 o C  
Single Pulse  
Duty Factor = t/T  
Single Pulse  
Peak Tj = PDM x Rthjc + TC  
0.01  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
0.1  
1
10  
100  
V DS , Drain-to-Source Voltage (V)  
t , Pulse Width (s)  
Fig 9. Maximum Safe Operating Area  
Fig 10. Effective Transient Thermal Impedance  
VG  
VDS  
90%  
QG  
4.5V  
QGD  
QGS  
10%  
VGS  
tr  
t
Q
td(on)  
d(off)tf  
Charge  
Fig 11. Switching Time Waveform  
Fig 12. Gate Charge Waveform  
4/4  

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