FGH30T65UPDT-F155 [ONSEMI]
650V，30A，场截止沟槽 IGBT;
| 型号： | FGH30T65UPDT-F155 |
| 厂家： | 
ONSEMI |
| 描述： | 650V，30A，场截止沟槽 IGBT 双极性晶体管 |
| 文件： | 总9页 (文件大小：844K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FGH30T65UPDT
650 V、 30 A 场截止沟道 IGBT
特性
•
•
•
•
•
•
•
•
•
最大结温：TJ =175°C
正温度系数，易于并联运行
高电流能力
概述
飞兆半导体新型场截止沟道 IGBT 系列产品采用创新型场截止沟
道 IGBT 技术，为光伏逆变器、 UPS、和数字功率产生器等低导
通和开关损耗至关重要的应用提供了最佳性能。
低饱和电压：VCE(sat) =1.65 V （典型值） @ IC=30 A
器件 100% 经过 ILM(2) 测试
高输入阻抗
应用
•
紧密的参数分布
光伏逆变器、 UPS、焊机、数码发电机
符合 RoHS 标准
短路耐用性 >5 μs @ 25°C
C
E
C
G
G
集电极
(FLANGE)
E
绝对最大额定值
符号
说明
额定值
650
单位
V
VCES
集电极 - 发射极之间电压
栅极－发射极间电压
瞬态栅极－发射极间电压
集电极电流
20
V
VGES
25
V
@ TC = 25°C
@ TC = 100°C
60
30
A
IC
A
集电极电流
ICM(1)
ILM(2)
90
A
集电极脉冲电流
箝位感性负载电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
90
A
@ TC = 25°C
@ TC = 100°C
60
A
IF
30
A
IFM(1)
PD
150
250
125
5
A
@ TC = 25°C
@ TC = 100°C
@ TC = 25°C
W
W
μs
最大功耗
短路耐受时间
SCWT
TJ
-55 至 +175
-55 至 +175
°C
°C
工作结温
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
300
°C
注意：
1: 重复额定值：脉宽受最大结温限制
2: I = 90 A， V = 400 V， R = 20
C
CC
g
热性能
符号
参数
典型值
最大值
0.60
1.2
单位
°C/W
°C/W
°C/W
RJC(IGBT)
RJC（二极管）
RJA
-
-
-
结点 - 壳体的热阻
结点 - 壳体的热阻
结至环境热阻
40
Publication Order Number:
FGH30T65UPDTCN/D
©2013 飞兆半导体公司
December-2017, 修订版 3
封装标识与定购信息
器件编号
顶标
封装
包装方法
卷尺寸
带宽
数量
FGH30T65UPD-F155
FGH30T65UPD
TO-247 G03
30
塑料管
不适用
不适用
IGBT 的电气特性 TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
650
-
-
-
-
V
集电极 - 发射极击穿电压
VGE = 0 V， IC = 1 mA
GE = 0 V, IC = 250 μA
BVCES
TJ
击穿温度系数电压
V
0.65
V/°C
ICES
IGES
-
-
-
-
250
μA
集电极切断电流
VCE = VCES， VGE = 0 V
VGE = VGES， VCE = 0 V
±400
nA
G-E 漏电流
导通特性
VGE(th)
4.0
-
6.0
7.5
2.3
V
V
G-E 阈值电压
IC = 30 mA， VCE = VGE
1.65
I
C = 30 A，VGE = 15 V
VCE(sat)
集电极 - 发射极间饱和电压
IC = 30 A， VGE = 15 V，
-
2.1
-
V
T
C = 175°C
动态特性
Cies
-
-
-
2280
85
-
-
-
pF
pF
pF
输入电容
VCE = 30 V， VGE = 0 V，
f = 1 MHz
Coes
输出电容
Cres
40
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
22
26
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
td(off)
tf
139
18
ns
关断延迟时间
下降时间
V
CC = 400 V， IC = 30 A，
RG = 8 ， VGE = 15 V，
感性负载， TC = 25°C
ns
Eon
Eoff
Ets
0.76
0.40
1.16
22
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
td(on)
tr
td(off)
tf
30
ns
151
19
ns
关断延迟时间
下降时间
V
R
CC = 400 V， IC = 30 A，
G = 8 ， VGE = 15 V，
ns
感性负载， TC = 175°C
Eon
Eoff
Ets
1.20
0.53
1.73
-
mJ
mJ
mJ
μs
导通开关损耗
关断开关损耗
总开关损耗
短路耐受时间
Tsc
VGE = 15 V， VCC < 400 V，
Rg = 10
Qg
-
-
-
155
21
-
-
-
nC
nC
nC
总栅极电荷
VCE = 400 V， IC = 30 A，
Qge
Qgc
栅极－发射极间电荷
栅极－发射极间电荷
V
GE = 15 V
91
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2
二极管电气特性 TC = 25°C 除非另有说明
符号 参数
测试条件
最小值 典型值 最大值 单位
TC = 25°C
TC = 175°C
TC = 175°C
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
-
-
-
-
-
-
-
2.3
1.9
35
3.0
-
VFM
Erec
trr
IF=30 A
V
二极管正向电压
-
uJ
ns
反向恢复电能
33
43
二极管反向恢复时间
IF=30 A， diF/dt=200 A/s
148
57
80
Qrr
nC
二极管反向恢复电荷
560
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3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
90
90
VGE=20 V
VGE=20 V
15 V
15 V
12 V
12 V
60
30
0
60
30
0
10 V
8 V
10 V
8 V
TC = 25oC
TC = 175oC
8
0
2
4
6
8
10
0
2
4
6
10
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 饱和电压特性
图 4. 饱和电压与壳温的关系 （在可变电流强度下）
90
3.5
Common Emitter
VGE = 15 V
3.0
60 A
60
30
0
2.5
2.0
30 A
Common Emitter
VGE = 15 V
TC = 25oC
TC = 175oC
1.5
IC = 15 A
1.0
0
1
2
3
4
5
25
50
75
100
125
150
175
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [oC]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
20
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
16
16
60 A
60 A
12
12
30 A
30 A
8
8
IC = 15 A
IC = 15 A
4
0
4
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
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4
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
10000
15
Cies
400 V
12
9
200 V
VCC = 300 V
1000
100
Coes
6
Cres
Common Emitter
3
VGE = 0 V, f = 1 MHz
TC = 25oC
Common Emitter
TC = 25oC
10
0
1
10
Collector-Emitter Voltage, VCE [V]
0
40
80
120
160
30
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
500
5000
Common Emitter
VCC = 400 V, VGE = 15 V
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 30 A
IC = 30 A
TC = 25oC
TC = 175oC
TC = 25oC
TC = 175oC
100
1000
100
10
td(off)
td(on)
tf
tr
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG []
Gate Resistance, RG []
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
30
500
Common Emitter
VCC = 400 V, VGE = 15 V
10
IC = 30 A
100
TC = 25oC
TC = 175oC
tr
Eon
td(on)
1
10
Eoff
Common Emitter
VGE = 15 V, RG = 8, VCC = 400 V
TC = 25oC
,
TC = 175oC
0.1
1
0
10
20
30
40
50
0
15
30
45
60
Gate Resistance, RG []
Collector Current, IC [A]
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5
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
50
1000
Common Emitter
VGE = 15 V, RG = 8
td(off)
TC = 25oC
10
TC = 175oC
100
Eon
tf
1
10
Eoff
Common Emitter
VGE = 15 V, RG = 8 , VCC = 400 V
TC = 25oC , TC = 175oC
0.1
1
0
15
30
45
60
0
15
30
45
60
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
150
IcMAX (Pulsed)
100
10
TC = 100oC
120
10s
1 ms
100 s
10 ms
IcMAX
(Continuous)
DC Operation
90
1
60
Duty cycle : 50%
TC = 100oC
Single Nonrepetitive
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
Power Dissipation = 125 W
30
VCC = 400 V
load Current : peak of square wave
0.01
0
0.1
1
10
100
1000
1k
10k 100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
图 17. 正向特性
图 18. 反向恢复电流
10
100
TC = 25oC
TC = 175oC
diF/dt = 200 A/s
8
TC = 175oC
6
4
2
0
100 A/s
10
TC = 75oC
diF/dt = 200 A/s
100 A/s
TC = 25oC
1
0
15
30
45
60
0
1
2
3
4
Forward Current, IF [A]
Forward Voltage, VF [V]
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6
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
800
200
TC = 25oC
TC = 175oC
diF/dt = 100 A/s
200 A/s
160
120
80
600
200 A/s
diF/dt = 100 A/s
TC = 25oC
TC = 175oC
400
200
di /dt = 100 A/s
F
40
200 A/s
diF/dt = 100 A/s
200 A/s
0
0
0
15
30
45
60
0
15
30
45
60
Forwad Current, IF [A]
Forward Current, IF [A]
图 21. IGBT 瞬态热阻抗
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
PDM
0.01
1E-3
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
single pulse
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
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7
机械尺寸
图 23. TO247，模塑， 3 引脚， JEDEC AB 长引脚
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
尺寸单位为毫米
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8
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