FGH40N60SFD [FAIRCHILD]
600V, 40A Field Stop IGBT; 600V ， 40A场截止IGBT
| 型号： | FGH40N60SFD |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V, 40A Field Stop IGBT |
| 文件： | 总9页 (文件大小：806K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
FGH40N60SFD
tm
600V, 40A Field Stop IGBT
Features
General Description
•
•
•
•
•
High current capability
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Induction Heating, UPS, SMPS and PFC applications where
low conduction and switching losses are essential.
Low saturation voltage: VCE(sat) =2.3V @ IC = 40A
High input impedance
Fast switching
RoHS compliant
Applications
•
Induction Heating, UPS, SMPS, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
Ratings
600
Units
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
A
A
± 20
80
@ TC = 25oC
@ TC = 100oC
IC
ICM (1)
PD
Collector Current
40
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Pulsed Collector Current
120
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
290
W
W
oC
oC
116
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.43
1.45
40
Units
oC/W
oC/W
oC/W
-
-
-
©2008 Fairchild Semiconductor Corporation
FGH40N60SFD Rev.C
1
www.fairchildsemi.com
Package Marking and Ordering Information
Max Qty
Packaging
Type
Device Marking
Device
Package
Qty per Tube
per Box
FGH40N60SFD
FGH40N60SFDTU
TO-247
Tube
30ea
-
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
600
-
-
-
-
V
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
0.6
V/oC
V
GE = 0V, IC = 250µA
Voltage
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
-
-
250
µA
±400
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
4.0
-
5.0
2.3
6.5
2.9
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
-
2.5
-
V
T
C = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
2110
200
60
-
-
-
pF
pF
pF
V
CE = 30V VGE = 0V,
,
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
42
-
-
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
115
27
-
ns
VCC = 400V, IC = 40A,
R
G = 10Ω, VGE = 15V,
54
-
ns
Inductive Load, TC = 25oC
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
1.13
0.31
1.44
24
mJ
mJ
mJ
ns
-
-
td(on)
tr
td(off)
tf
-
43
-
ns
Turn-Off Delay Time
Fall Time
120
30
-
ns
VCC = 400V, IC = 40A,
G = 10Ω, VGE = 15V,
Inductive Load, TC = 125oC
R
-
ns
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
1.14
0.48
1.62
120
14
-
mJ
mJ
mJ
nC
nC
nC
-
-
Qg
-
V
V
CE = 400V, IC = 40A,
GE = 15V
Qge
Qgc
-
58
-
2
www.fairchildsemi.com
FGH40N60SFD Rev. C
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.95
1.85
45
Max Units
T
T
T
C = 25oC
C = 125oC
C = 25oC
-
-
-
-
-
-
2.6
VFM
Diode Forward Voltage
IF = 20A
V
-
-
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
TC = 125oC
C = 25oC
TC = 125oC
140
75
-
IES =20A, dIES/dt = 200A/µs
T
-
Qrr
nC
375
-
3
www.fairchildsemi.com
FGH40N60SFD Rev.C
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
120
120
TC = 25oC
TC = 125oC
20V
15V
20V
100
80
60
40
20
0
15V
100
80
60
40
20
0
12V
12V
10V
10V
VGE = 8V
VGE = 8V
4.5
0.0
1.5
3.0
6.0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
80
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
TC = 125oC
80
60
40
20
0
40
0
6
8
10
12
13
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
4.0
3.5
3.0
2.5
2.0
1.5
1.0
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40oC
16
12
8
80A
40A
80A
IC = 20A
40A
12
4
IC = 20A
8
0
25
50
75
100
125
4
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
4
www.fairchildsemi.com
FGH40N60SFD Rev. C
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
TC = 125oC
Common Emitter
TC = 25oC
16
12
8
16
12
8
40A
80A
80A
40A
4
4
IC = 20A
8
IC = 20A
8
0
0
4
12
16
20
4
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
Figure 10. Gate charge Characteristics
15
5000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
12
4000
3000
2000
1000
0
Ciss
200V
Vcc = 100V
300V
9
6
3
0
Coss
Crss
0
50
100
150
0.1
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
100
200
10µs
100
100µs
10
1ms
10 ms
DC
tr
1
Common Emitter
VCC = 400V, VGE = 15V
Single Nonrepetitive
o
Pulse T = 25 C
C
Curves must be derated
linearly with increase
in temperature
td(on)
IC = 40A
TC = 25oC
TC = 125oC
0.1
0.01
10
1
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω]
5
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FGH40N60SFD Rev. C
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
Figure 14. Turn-on Characteristics vs.
Collector Current
500
5500
Common Emitter
VGE = 15V, RG = 10Ω
Common Emitter
VCC = 400V, VGE = 15V
TC = 25oC
IC = 40A
TC = 25oC
TC = 125oC
1000
TC = 125oC
tr
td(off)
100
100
td(on)
tf
10
20
10
40
60
80
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
Figure 16. Switching Loss vs. Gate Resistance
10
500
Common Emitter
Common Emitter
VCC = 400V, VGE = 15V
VGE = 15V, RG = 10Ω
TC = 25oC
IC = 40A
TC = 25oC
TC = 125oC
TC = 125oC
td(off)
Eon
100
tf
1
Eoff
0.2
10
20
0
10
20
30
40
50
40
60
80
Gate Resistance, RG [Ω]
Collector Current, IC [A]
Figure 17. Switching Loss vs. Collector Current
Figure 18. Turn off Switching
SOA Characteristics
30
200
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
10
Eon
Eoff
1
10
Safe Operating Area
VGE = 15V, TC = 125oC
0.1
1
1
10
100
1000
20
30
40
50
60
70
80
Collector-Emitter Voltage, VCE [V]
Collector Current, IC [A]
6
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FGH40N60SFD Rev. C
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Typical Reverse Current vs.
Reverse Voltage
80
200
100
TJ = 125oC
TJ = 125oC
10
10
TJ = 25oC
TJ = 75oC
TJ = 75oC
1
TC = 25oC
1
0.1
TJ = 25oC
TC = 75oC
TC = 125oC
0.2
0.01
0
1
2
3
4
50
200
400
600
Forward Voltage, VF [V]
Reverse Voltage, VR [V]
Figure 21. Stored Charge
Figure 22. Reverse Recovery Time
60
100
200A/µs
80
50
di/dt = 100A/µs
60
200A/µs
di/dt = 100A/µs
40
40
30
20
5
10
20
30
40
5
10
20
30
40
Forward Current, IF [A]
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
7
www.fairchildsemi.com
FGH40N60SFD Rev. C
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
www.fairchildsemi.com
8
FGH40N60SFD Rev. C
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Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Not In Production
Rev. I35
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