2SK3534-01MR [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3534-01MR |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3534-01MR
200304
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Super FAP-G Series
Outline Drawings [mm]
TO-220F
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
VDS
Ratings
900
Unit
V
Drain-source voltage
VDSX *5
ID
900
±7
V
Equivalent circuit schematic
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
±28
±30
7
A
Gate-source voltage
V
Drain(D)
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
IAR
*2
*1
A
EAS
269.5
40
mJ
kV/µs
kV/µs
W
dVDS/dt *4
dV/dt
*3
5
Gate(G)
°C
°C
PD Ta=25
Tc=25
Tch
2.16
Source(S)
80
+150
Operating and storage
temperature range
Isolation Voltage
°C
-55 to +150
2
Tstg
°C
VISO *6
kVrms
<
*1 L=10.1mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch 150°C
=
<
<
<
<
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
*4 VDS 900V *5 VGS=-30V *6 t=60sec, f=60Hz
=
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
V(BR)DSS
VGS(th)
Item
Test Conditions
µ
Drain-source breakdown voltaget
Gate threshold voltage
900
V
ID= 250 A
VGS=0V
VDS=VGS
µ
3.0
5.0
25
V
ID= 250 A
µA
Tch=25°C
VDS=900V VGS=0V
Zero gate voltage drain current
IDSS
250
100
Tch=125°C
VDS=720V VGS=0V
VGS=±30V
VDS=0V
ID=3.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
1.54
8.2
920
115
6.6
2.00
Ω
4.1
S
ID=3.5A VDS=25V
Ciss
1380
175
10
pF
VDS=25V
Coss
Crss
td(on)
tr
Output capacitance
VGS=0V
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=3.5A
ns
22
8
33
12
VGS=10V
45
10.5
25
4
67.5
td(off)
tf
Turn-off time toff
RGS=10 Ω
16
37.5
6
QG
nC
Total Gate Charge
VCC=450V
ID=7A
QGS
QGD
IAV
Gate-Source Charge
Gate-Drain Charge
8.5
13
VGS=10V
7
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=10.1mH Tch=25°C
0.90
1.50
VSD
trr
Qrr
V
IF=7A VGS=0V Tch=25°C
IF=7A VGS=0V
-di/dt=100A/µs
Tch=25°C
2.6
8.0
µs
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
1.560
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
58.0
°C/W
1
2SK3534-01MR
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
10V
8.0V
7.0V
10
8
20V
6.5V
6.0V
6
4
2
VGS=5.5V
0
0
5
10
15
20
0
25
50
75
100
125
150
VDS [V]
Tc [°C]
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
10
1
0.1
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3.5A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
6.5V
VGS=5.5V
6.0V
7.0V
8.0V
10V
20V
max.
typ.
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
Tch [°C]
ID [A]
2
2SK3534-01MR
FUJI POWER MOSFET
Typical Gate Charge Characteristics
Gate Threshold Voltage vs. Tch
VGS=f(Qg):ID=7A,Tch=25°C
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
8
Vcc= 180V
450V
720V
max.
min.
6
4
2
0
0
5
10
15
20
25
30
35
-50
-25
0
25
50
75
100
125
150
Qg [nC]
Tch [°C]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
IF=f(VSD):80 µs pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
101
10
Ciss
100
10-1
10-2
10-3
Coss
Crss
1
0.1
0.00
100
101
102
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
VDS [V]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
Ω
103
102
101
100
800
600
400
200
0
IAS=3A
IAS=4A
tf
td(off)
td(on)
tr
IAS=7A
10-1
100
101
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3534-01MR
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=90V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4
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