IAUA200N04S5N010 [INFINEON]
车规级MOSFET;
| 型号： | IAUA200N04S5N010 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总12页 (文件大小：915K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUA200N04S5N010
Automotive MOSFET
OptiMOS™ 5 Power-Transistor
PG-HSOF-5-1
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
40
V
RDS(on),max
ID (chip limited)
0.94
200
mΩ
A
Type
Package
Marking
IAUA200N04S5N010
PG-HSOF-5-1
5N04N010
Data Sheet
www.infineon.com/mosfets
Please read the Important Notice and Warnings at the end of this document
Rev. 1.3
2022-01-24
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
#VALUE!
Rev. 1.3
2022-01-24
2
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
T C = 25 °C, V GS = 10 V1)
T C = 100 °C, V GS = 10 V2)
T C = 25 °C
I D
200
200
800
A
Continuous drain current
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
E AS
I D = 100 A
280
200
mJ
A
I AS
–
V GS
±20
V
–
P tot
T j, T stg
T C = 25 °C
167
W
°C
Power dissipation
-55 ... +175
Operating and storage temperature
–
#VALUE!
Rev. 1.3
3
Data Sheet
2022-01-24
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
Thermal characteristics2)
Parameter
Values
typ.
–
Symbol
Conditions
Unit
min.
max.
R thJC
R thJA
Thermal resistance, junction - case
–
–
0.90 K/W
Thermal resistance,
junction - ambient
6 cm² cooling area3)
–
–
60
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS = 0 V,
I D = 1 mA
V (BR)DSS
V GS(th)
I DSS
40
2.2
–
–
2.8
–
–
3.4
1
V
V DS = V GS, I D = 100 µA
V DS = 40 V, V GS = 0 V,
T j = 25 °C
Zero gate voltage drain current
µA
V DS = 40 V, V GS = 0 V,
T j = 125 °C2)
–
–
100
I GSS
V GS = 20 V, V DS = 0 V
V GS = 7 V, I D = 100 A
V GS = 10 V, I D = 100 A
Gate-source leakage current
–
–
–
–
100 nA
1.20 mΩ
0.94
R DS(on)
Drain-source on-state resistance
0.90
0.80
Rev. 1.3
2022-01-24
4
Data Sheet
#VALUE!
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
Crss
t d(on)
t r
Input capacitance
–
–
–
–
–
–
–
5750
1600
80
7650 pF
2130
V GS = 0 V, V DS = 25 V,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
120
11
–
–
–
–
ns
6
V DD = 20 V, V GS = 10 V,
I D = 200 A, R G = 3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
23
12
Gate Charge Characteristics2)
Q gs
Gate to source charge
–
–
–
–
28
21
99
4.7
37
32
132
–
nC
V
Q gd
Gate to drain charge
Gate charge total
V DD = 32 V, I D = 200 A,
V GS = 0 to 10 V
Q g
V plateau
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
I S
–
–
–
–
200
800
A
V
T C = 25 °C
Diode pulse current2)
I S,pulse
V GS = 0 V, I F = 100 A,
T j = 25 °C
V SD
Diode forward voltage
–
0.8
1.1
Reverse recovery time2)
Reverse recovery charge2)
t rr
–
–
65
80
–
–
ns
V R = 20 V, I F = 50 A,
di F/dt = 100 A/µs
Q rr
nC
1) Current is limited by package; with a Rthjc = 0.9 K/W the chip is able to carry 300 A at 25°C.
2) The parameter is not subject to production test- verified by design/characterization.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.3
2022-01-24
5
Data Sheet
#VALUE!
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
Electrical characteristics diagrams
1 Power dissipation
P tot = f(T C); V GS ≥ 10 V
200
2 Drain current
I D = f(T C); V GS ≥ 10 V
225
200
175
150
125
100
75
175
150
125
100
75
50
50
25
25
0
0
0
0
50
100
150
200
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
101
1000
1 µs
10 µs
100 µs
100
0.5
100
10
1
150 µs
0.1
10-1
0.05
0.01
10-2
single pulse
10-3
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.3
2022-01-24
#VALUE!
6
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; parameter: VGS
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
800
10
10V
7V
5.5V
700
600
500
8
6
400
5V
4.5V
5V
4
300
200
5.5V
2
0
4.5V
100
7V
10V
0
0
1
2
3
0
100 200 300 400 500 600 700 800
VDS [V]
Title
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V: parameter: Tj
800
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A, V GS = 10 V
1.75
700
600
500
400
300
1.5
1.25
1
0.75
0.5
200
175 °C
100
-55 °C
25 °C
0
0.25
3
4
5
6
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.3
2022-01-24
7
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
9 Typ. gate threshold voltage
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
104
V GS(th) = f(T j); V GS = V DS; parameter: I D
4
Ciss
3.5
Coss
3
1000 µA
103
102
101
2.5
100 µA
2
1.5
1
Crss
0.5
0
0
10
20
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I AS = f(t AV); parameter: T j(start)
1000
I F = f(V SD ); parameter: T j
103
102
100
10
1
25 °C
175 °C
25 °C
100 °C
150 °C
101
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.3
2022-01-24
8
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
13 Typical avalanche energy
E AS = f(T j); parameter: ID
600
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D_typ = 1 mA
46
50 A
500
44
42
40
38
36
400
300
100 A
200
200 A
100
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 200 A pulsed; parameter: V DD
10
V GS
9
Q g
8 V
32 V
8
7
6
5
4
3
2
1
0
V gs(th)
Q g(th)
Q sw
Q gate
Q gd
Q gs
0
10 20 30 40 50 60 70 80 90 100 110
Qgate [nC]
Rev. 1.3
2022-01-24
9
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
Package Outline
Footprint
Packaging
Rev. 1.3
2022-01-24
10
Data Sheet
OptiMOS™ 5 Automotive Power MOSFET, 40 V
IAUA200N04S5N010
Revision History
Revision
Date
Changes
Revision 1.0
Revision 1.1
Revision 1.2
Revision 1.3
07.12.2017
10.07.2018
14.04.2021
24.01.2022
Final Data Sheet
Package name, SOA curve 10 µs
RDS(on) improved
Editorial changes, package drawing added
Rev. 1.3
2022-01-24
11
Data Sheet
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2022-01-24
Published by
IMPORTANT NOTICE
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regarded as
a guarantee of conditions or characteristics terms and conditions and prices, please contact
Infineon Technologies AG
81726 Munich, Germany
("Beschaffenheitsgarantie").
the nearest Infineon Technologies Office
(www.infineon.com).
With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property rights of
any third party.
WARNINGS
© 2022 Infineon Technologies AG
All Rights Reserved.
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact the nearest
Infineon Technologies Office.
In addition, any information given in this document is subject to
customer's compliance with its obligations stated in this document
and any applicable legal requirements, norms and standards
concerning customer's products and any use of the product of
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aspect of this document?
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Infineon Technologies in
a written document
Email: erratum@infineon.com
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may not be used in any applications where a
failure of the product or any consequences of the
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Infineon
Technologies
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customer's
applications.
The data contained in this document is exclusively intended for
technically trained staff. It is the responsibility of customer’s
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information given in this document with respect to such
application.
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