IRF7311TR [INFINEON]
Generation V Technology; 第五代技术
| 型号： | IRF7311TR |
| 厂家： | 
Infineon |
| 描述： | Generation V Technology |
| 文件： | 总7页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91435C
IRF7311
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
1
2
8
D1
S1
G 1
VDSS = 20V
7
D 1
3
4
6
S2
D2
l Fully Avalanche Rated
5
G 2
D 2
RDS(on) = 0.029Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
VDS
20
± 12
6.6
V
VGS
TA = 25°C
TA = 70°C
Continuous Drain Currentꢀ
ID
5.3
26
A
Pulsed Drain Current
IDM
IS
Continuous Source Current (Diode Conduction)
2.5
TA = 25°C
TA = 70°C
2.0
Maximum Power Dissipation ꢀ
P
D
W
1.3
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
100
mJ
A
4.1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
EAR
0.20
5.0
mJ
V/ ns
°C
dv/dt
TJ,TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢀ
RθJA
62.5
°C/W
5/29/01
IRF7311
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.023 0.029
––– 0.030 0.046
0.7 ––– –––
––– 20 –––
––– ––– 1.0
––– ––– 5.0
––– ––– 100
––– ––– -100
VGS = 4.5V, ID = 6.0A
VGS = 2.7V, ID = 5.2A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 6.0A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 55°C
VGS = 12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
Qg
––– 18
27
ID = 6.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.2 3.3
––– 6.2 9.3
nC VDS = 10V
VGS = 4.5V, See Fig. 10
––– 8.1
––– 17
––– 38
––– 31
12
25
57
47
VDD = 10V
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 10Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 900 –––
––– 430 –––
––– 200 –––
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 2.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 26
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– 0.72 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V
––– 52
––– 58
77
86
ns
TJ = 25°C, IF = 1.7A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
Starting TJ = 25°C, L = 12mH
RG = 25Ω, IAS = 4.1A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on 1 in square Cu board
IRF7311
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
TOP
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
BOTTOM 1.50V
BOTTOM 1.50V
1.50V
1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
°
T = 25 C
J
°
T = 150 C
°
J
T = 150 C
J
10
10
°
T = 25 C
J
V
= 10V
DS
V
= 0 V
20µs PULSE WIDTH
GS
1
1.5
1
0.4
2.0
2.5
3.0
0.6
V
0.8
1.0
1.2
1.4
1.6
V
, Gate-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
IRF7311
0.032
0.028
0.024
0.020
2.0
6.0A
=
I
D
V
= 2.7V
G S
1.5
1.0
0.5
0.0
V
= 4.5V
G S
V
= 4.5V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
0.05
300
I
D
TOP
1.8A
3.3A
BOTTOM 4.1A
250
200
150
100
50
0.04
0.03
0.02
0.01
I
= 6.6A
D
A
0
0
2
4
6
8
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
G S
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
IRF7311
1600
1200
800
400
0
10
8
V
C
C
C
= 0V ,
f = 1M Hz
G S
iss
I
D
= 6.0A
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
V
= 10V
DS
rss
oss
gd
C
C
iss
oss
6
4
C
rss
2
0
A
0
5
10
15
20
25
30
1
10
100
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRF7311
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
0.635 BASIC
e 1 .025 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
YWW
XXXX
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
F7101
PART NUMBER
IRF7311
SO-8 Tape and Reel
T E R M IN A L N U M B E R
1
12.3 ( .48 4
11.7 ( .46 1
)
)
8.1 ( .31 8
7.9 ( .31 2
)
)
FE E D D IR E C TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.00
(12.992)
M AX .
14.40 ( .5 66
12.40 ( .4 88
)
)
N O TE S
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .
2. O U TL IN E C O N FO R M S T O E IA -481 E IA -541.
:
&
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 5/01
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