IRF7509PBF-1_技术文档

IRF7509PbF-1

HEXFET^®Power MOSFET

N-CH P-CH

N-CHANNEL MOSFET

1

2

3

4

8

D1

S1

V_DS

30

0.11

7.8

-30

V

Ω

7

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

G1

0.2

6

5

S2

D2

7.5

-2.0

nC

A

G2

D2

2.7

P-CHANNEL MOSFET

(@T_A= 25°C)

Micro8

Top View

Features

Benefits

Industry-standard pinout Micro-8 Package

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant, Halogen-Free

MSL1, Industrial qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube/Bulk

Tape and Reel

95

4000

IRF7509PbF-1

IRF7509TRPbF-1

IRF7509PbF-1

Micro-8

Absolute Maximum Ratings

Parameter

Max.

Units

N-Channel

P-Channel

-30

V_DS

Drain-Source Voltage

30

2.7

2.1

21

V

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS

Pulsed Drain Current

-2.0

-1.6

A

-16

P_D@T_A= 25°C

P_D@T_A= 70°C

Maximum Power Dissipation

Linear Derating Factor

1.25

0.8

10

W

mW/°C

V

V_GS

Gate-to-Source Voltage

± 20

30

V_GSM

dv/dt

Gate-to-Source Voltage Single Pulse tp<10μS

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

V

5.0

V/ns

°C

T_J, T_STG

-55 to + 150

240 (1.6mm from case)

Thermal Resistance

Parameter

Max.

Units

R_θJA

Maximum Junction-to-Ambient

100

°C/W

1

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IRF7509PbF-1

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

_GS= 0V, I_D= -250µA

Reference to 25°C, I_D= 1mA

Reference to 25°C, I_D= -1mA

V_GS= 10V, I_D= 1.7A

N-Ch 30

P-Ch -30

0.059

-0.039

V_(BR)DSS

Drain-to-SourceBreakdownVoltage

V

N-Ch

P-Ch

ΔV_(BR)DSS/ΔT_JBreakdown Voltage Temp. Coefficient

V/°C

0.09 0.110

0.14 0.175

0.17 0.20

0.30 0.40

N-Ch

P-Ch

V

_GS= 4.5V, I_D= 0.85A

V_GS= -10V, I_D=-1.2A

_GS= -4.5V, I_D=-0.6A

R_DS(ON)

Static Drain-to-Source On-Resistance

Ω

V

N-Ch 1.0

P-Ch -1.0

N-Ch 1.9

P-Ch 0.92

V_DS= V_GS, I_D= 250µA

V_DS= V_GS, I_D= -250µA

V_DS= 10V, I_D= 0.85A

_DS= -10V, I_D= -0.6A

V_DS= 24 V, V_GS= 0V

V_DS= -24V, V_GS= 0V

V_DS= 24 V, V_GS= 0V, T_J= 125°C

V_DS= -24V, V_GS= 0V, T_J= 125°C

V_GS= ± 20V

V_GS(th)

g_fs

Gate Threshold Voltage

V

S

ForwardTransconductance

V

N-Ch

P-Ch

N-Ch

P-Ch

1.0

-1.0

25

-25

±100

I_DSS

Drain-to-SourceLeakageCurrent

µA

I_GSS

Q_g

Gate-to-SourceForwardLeakage

Total Gate Charge

N-P

N-Ch 7.8 12

P-Ch 7.5 11

N-Ch 1.21.8

P-Ch 1.3 1.9

N-Ch 2.5 3.8

N-Channel

I_D= 1.7A, V_DS= 24V, V_GS= 10V

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-SourceCharge

Gate-to-Drain("Miller")Charge

Turn-On Delay Time

Rise Time

nC

P-Channel

I_D= -1.2A, V_DS= -24V, V_GS= -10V

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

2.5 3.7

4.7

9.7

10

N-Channel

V_DD= 15V, I_D= 1.7A, R_G= 6.1Ω,

R_D= 8.7Ω

12

19

ns

pF

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

P-Channel

V

_DD= -15V, I_D= -1.2A, R_G= 6.2Ω,

5.3

9.3

210

180

80

R_D= 12Ω

C_iss

C_oss

C_rss

Input Capacitance

N-Channel

V_GS= 0V, V_DS= 25V, = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

87

32

42

P-Channel

V_GS= 0V, V_DS= -25V, = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter

N-Ch

Min. Typ. Max. Units

Conditions

40

30

48

37

1.25

-1.25

21

I_S

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

DiodeForwardVoltage

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

A

I_SM

V_SD

t_rr

-16

1.2T

-1.2T

60

45

72

_J= 25°C, I_S= 1.7A, V_GS= 0V

_J= 25°C, I_S= -1.8A, V_GS= 0V

V

N-Channel

ns

nC

Reverse Recovery Time

T_J= 25°C, I_F= 1.7A, di/dt = 100A/µs

P-Channel

Q_rr

Reverse Recovery Charge

T_J= 25°C, I_F= -1.2A, di/dt = -100A/µs

55

Notes:

Repetitive rating; pulse width limited by

Pulse width ≤ 300µs; duty cycle ≤ 2%.

Surface mounted on FR-4 board, t ≤ 10sec.

max. junction temperature. ( See fig. 21 )

N-Channel I_SD≤ 1.7A, di/dt ≤ 120A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

P-Channel I_SD≤ -1.2A, di/dt ≤ 160A/µs, V_DD≤ V_(BR)DSS, T_J≤ 150°C

2

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IRF7509PbF-1

N - Channel

100

10

1

100

10

1

VGS

15V

VGS

15V

10V

TOP

10V

7.0V

5.5V

4.5V

4.0V

3.5V

7.0V

5.5V

4.5V

4.0V

3.5V

BOTTOM 3.0V

3.0V

20μs PULSE WIDTH

T

= 150°C

T

= 25°C

J

A

0.1

1

10

0.1

1

10

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

T_J= 25°C

T_J= 150°C

10

T = 150°C

J

T = 25°C

J

1

V _DS= 10V

20μs PULSE WIDTH

V

GS

= 0V

0.1

A

0.1

_6.0A

3.0

3.5

4.0

4.5

5.0

5.5

0.4

0.8

1.2

1.6

2.0

V_GS, Gate-to-Source Voltage (V)

V

, Source-to-Drain Voltage (V)

SD

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode

ForwardVoltage

2.0

0.220

I

= 1.7A

D

1.5

1.0

0.5

0.0

0.180

VGS = 4.5V

0.140

0.100

VGS = 10V

V

= 10V

GS

0.060

A

0

2

4

6

8

10

-60 -40 -20

0

20 40

60 80 100 120 140 160

I

, Drain Current (A)

T

J

, Junction Temperature (°C)

D

Fig 5. Normalized On-Resistance

Fig 6. Typical On-Resistance Vs. Drain

Vs.Temperature

Current

3

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IRF7509PbF-1

N - Channel

100

10

1

0.140

0.120

0.100

0.080

0.060

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

ID = 2.7A

100us

1ms

10ms

°

= 25 C

°

= 150 C

T

C

T

J

Single Pulse

0.1

0

4

8

12

16

1

10

100

V

, Gate-to-Source Voltage (V)

GS

V

, Drain-to-Source Voltage (V)

DS

Fig 8. Maximum Safe Operating Area

Fig 7. Typical On-Resistance Vs. Gate

Voltage

20

400

I

= 1.7A

V

C

= 0V,

f = 1MHz

D

GS

iss

rss

oss

= C + C

,

C

SHORTED

V

= 24V

= 15V

gs

gd

ds

DS

= C

= C + C

ds

gd

16

12

8

300

200

100

0

C

iss

oss

C

rss

4

FOR TEST CIRCUIT

SEE FIGURE 9

0

A

1

10

100

0

2

4

6

8

10

12

V

, Drain-to-Source Voltage (V)

Q

, Total Gate Charge (nC)

DS

G

Fig 9. Typical Capacitance Vs.

Fig 10. Typical Gate Charge Vs.

Drain-to-SourceVoltage

Gate-to-SourceVoltage

4

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IRF7509PbF-1

P - Channel

10

VGS

- 15V

VGS

- 15V

- 10V

TOP

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

1

-3.0V

20μs PULSE WIDTH

T

J

= 150°C

T

J

= 25°C

A

0.1

1

10

0.1

1

10

-V , Drain-to-Source Voltage (V)

DS

-V , Drain-to-Source Voltage (V)

DS

Fig 11. Typical Output Characteristics

Fig 12. Typical Output Characteristics

10

T_J= 25°C

T_J= 150°C

T

= 150°C

J

T

= 25°C

J

1

V_DS= -10V

20μs PULSE WIDTH

V

= 0V

GS

A

0.1

_7.0A

0.4

0.6

0.8

1.0

1.2

1.4

3.0

4.0

5.0

6.0

-V , Source-to-Drain Voltage (V)

SD

-V_GS, Gate-to-Source Voltage (V)

Fig 13. Typical Transfer Characteristics

Fig 14. Typical Source-Drain Diode

ForwardVoltage

2.0

I

= -1.2A

D

1.5

1.0

0.5

0.0

V

= -10V

GS

A

-60 -40 -20

0

20 40

60 80 100 120 140 160

T

J

, Junction Temperature (°C)

Fig 15. Normalized On-Resistance

Fig 16. Typical On-Resistance Vs. Drain

Vs.Temperature

Current

5

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IRF7509PbF-1

P - Channel

100

10

1

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

10us

100us

1ms

10ms

°

= 25 C

T

C

°

= 150 C

T

J

Single Pulse

0.1

1

10

100

-V , Drain-to-Source Voltage (V)

DS

Fig 17. Typical On-Resistance Vs. Gate

Fig 18. Maximum Safe Operating Area

Voltage

400

20

V

C

= 0V,

f = 1MHz

I

= -1.2A

GS

iss

rss

oss

D

= C + C

,

C

SHORTED

gs

gd

ds

= C

gd

V

= -24V

= -15V

DS

= C + C

ds

16

12

8

V

DS

300

200

100

0

C

iss

oss

C

rss

4

FOR TEST CIRCUIT

SEE FIGURE 9

0

A

0

2

4

6

8

10

12

1

10

100

-V , Drain-to-Source Voltage (V)

Q

, Total Gate Charge (nC)

G

DS

Fig 20. Typical Gate Charge Vs.

Fig 19. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

N-P - Channel

1000

100

D = 0.50

0.20

0.10

10

0.05

P

2

DM

0.02

0.01

t

1

t

2

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t

/ t

1

2. Peak T =P

J

x

Z

+ T

thJA A

DM

0.1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

t , Rectangular Pulse Duration (sec)

1

Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

6

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IRF7509PbF-1

Micro8 Package Outline

Dimensions are shown in milimeters (inches)

LEAD ASSIGNMENTS

INCHES

MILLIMETERS

DIM

A

D

MIN

.036

MAX

.044

.008

.014

.007

.120

MIN

0.91

0.10

0.25

0.13

2.95

MAX

1.11

0.20

0.36

0.18

3.05

3

- B -

D

D1 D1 D2 D2

A1 .004

8

1

7

6

5

4

8

1

7

6

5

B

C

D

e

.010

.005

.116

8

1

7

2

6

3

5

4

3

SINGLE

DUAL

H

E

0.25 (.010)

M

A

M

- A -

2

3

2

3

4

.0256 BASIC

.0128 BASIC

0.65 BASIC

0.33 BASIC

e1

E

H

L

S1 G1 S2 G2

S

G

.116

.188

.016

0°

.120

.198

.026

6°

2.95

4.78

0.41

0°

3.05

5.03

0.66

6°

e

θ

6X

e 1

RECOMMENDED FOOTPRINT

θ

1.04

( .041 )

8X

0.38

8X

A

( .015 )

- C -

B

0.10 (.004)

A 1

C

L

8X

0.08 (.003)

8X

M

C

A

S

B S

3.20

( .126 )

4.24

( .167 ) ( .208 )

5.28

NOTES:

1

2

3

DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.

CONTROLLING DIMENSION : INCH.

0.65

( .0256 )

6X

DIMENSIONS DO NOT INCLUDE MOLD FLASH.

Micro8 Part Marking Information (Lead-Free)

EXAMPLE: THIS IS AN IRF7501

DATE CODE (YW)

Y = YEAR

W= WEEK

LOT CODE (XX)

PART NUMBER

P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL)

WW= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR

WORK

YEAR

Y

WEEK

W

2001

2002

2003

1994

1995

1996

1997

1998

1999

2000

1

2

3

4

5

6

7

8

9

0

01

02

03

04

A

B

C

D

DATE CODE EXAMPLES:

YWW = 9503 = 5C

YWW = 9532 = EF

24

25

26

X

Y

Z

WW= (27-52) IF PRECEDED BY ALETTER

WORK

YEAR

Y

WEEK

W

2001

2002

2003

1994

1995

1996

1997

1998

1999

2000

A

B

C

D

E

27

28

29

30

A

B

C

D

F

G

H

J

K

50

51

52

X

Y

Z

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

7

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IRF7509PbF-1

Micro8 Tape & Reel Information

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. OUTLINE CONFORMS TO EIA-481 & EIA-541.

2. CONTROLLING DIMENSION : MILLIMETER.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Qualification information^†

Industrial

(per JEDEC JESD47F^††guidelines)

Qualification level

MS L 1

Moisture Sensitivity Level

RoHS compliant

Micro-8

(per JEDEC J-STD-020D^††

Yes

)

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability

†† Applicable version of JEDEC standard at the time of product release

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

8

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型号：	IRF7509PBF-1
厂家：	Infineon
描述：	Small Signal Field-Effect Transistor,
文件：	总8页 (文件大小：236K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7509PBF-1 [INFINEON]

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