IRF7509PBF [INFINEON]
HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET
| 型号： | IRF7509PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢Power MOSFET |
| 文件： | 总8页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95397
IRF7509PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
N-CHANNEL MOSFET
1
2
3
4
8
D1
S1
N-Ch P-Ch
7
G1
D1
6
5
VDSS 30V -30V
S2
D2
G2
D2
P-CHANNEL MOSFET
RDS(on) 0.11Ω 0.20Ω
Top View
l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
N-Channel
P-Channel
VDS
Drain-Source Voltage
30
2.7
2.1
21
-30
-2.0
-1.6
-16
V
A
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
W
W
0.8
10
± 20
mW/°C
V
VGS
Gate-to-Source Voltage
VGSM
dv/dt
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
30
V
5.0
V/ns
°C
TJ , TSTG
-55 to + 150
240 (1.6mm from case)
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
RθJA
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1
6/15/04
IRF7509PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
GS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 1.7A
N-Ch 30
P-Ch -30
0.059
-0.039
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
V
N-Ch
P-Ch
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C
0.09 0.110
N-Ch
P-Ch
0.14 0.175V
0.17 0.20
0.30 0.40
GS = 4.5V, ID = 0.85A
VGS = -10V, ID =-1.2A
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
V
GS = -4.5V, ID =-0.6A
N-Ch 1.0
P-Ch -1.0
N-Ch 1.9
P-Ch 0.92
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
VDS = 10V, ID = 0.85A
VDS = -10V, ID = -0.6A
VDS = 24 V, VGS = 0V
VDS = -24V, VGS = 0V
DS = 24 V, VGS = 0V, TJ = 125°C
DS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
VGS(th)
gfs
Gate Threshold Voltage
V
S
ForwardTransconductance
N-Ch
P-Ch
N-Ch
P-Ch
1.0
-1.0
25V
-25V
±100
IDSS
Drain-to-SourceLeakageCurrent
µA
IGSS
Qg
Gate-to-SourceForwardLeakage
Total Gate Charge
N-P
N-Ch 7.8 12
P-Ch 7.511
N-Ch 1.2 1.8
P-Ch 1.3 1.9
N-Ch 2.53.8
N-Channel
ID = 1.7A, VDS = 24V, VGS = 10V
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
Rise Time
nC
P-Channel
ID = -1.2A, VDS = -24V, VGS = -10V
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2.53.7
4.7
9.7
10
12
12
N-Channel
VDD = 15V, ID = 1.7A, RG = 6.1Ω,
RD = 8.7Ω
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
P-Channel
19
V
DD = -15V, ID = -1.2A, RG = 6.2Ω,
5.3
9.3
210
180
80
87
32
42
RD = 12Ω
Ciss
Coss
Crss
Input Capacitance
N-Channel
VGS = 0V, VDS = 25V, = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
P-Channel
VGS = 0V, VDS = -25V, = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
N-Ch
Min. Typ. Max. Units
Conditions
40
30
48
37
1.25
-1.25
21
-16
1.2
-1.2
60
45
72
55
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
DiodeForwardVoltage
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
A
ISM
VSD
trr
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Channel
V
ns
nC
Reverse Recovery Time
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
Qrr
Reverse Recovery Charge
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 21 )
N-Channel ISD ≤ 1.7A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7509PbF
N - Channel
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 150°C
T
= 25°C
J
J
A
A
0.1
0.1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
100
TJ = 25°C
TJ = 150°C
10
10
T = 150°C
J
T = 25°C
J
1
1
V DS= 10V
20µs PULSE WIDTH
V
GS
= 0V
0.1
A
0.1
6.0A
3.0
3.5
4.0
4.5
5.0
5.5
0.4
0.8
1.2
1.6
2.0
VGS , Gate-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
2.0
0.220
0.180
I
= 1.7A
D
1.5
1.0
0.5
0.0
VGS = 4.5V
0.140
0.100
VGS = 10V
V
= 10V
GS
0.060
A
0
2
4
6
8
10
-60 -40 -20
0
20 40
60 80 100 120 140 160
I
, Drain Current (A)
D
T
J
, Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
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3
IRF7509PbF
N - Channel
100
10
1
0.140
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
0.120
10us
ID = 2.7A
100us
1ms
0.100
0.080
0.060
10ms
°
= 25 C
°
= 150 C
T
C
T
J
Single Pulse
0.1
0
4
8
12
16
1
10
100
V
GS
, Gate-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical On-Resistance Vs. Gate
Voltage
20
400
I
= 1.7A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
= C
= C + C
ds
gd
16
12
8
300
200
100
0
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
2
4
6
8
10
12
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
4
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IRF7509PbF
P - Channel
10
10
VGS
- 15V
VGS
- 15V
- 10V
TOP
TOP
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
1
1
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
0.1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
10
10
TJ = 25°C
TJ = 150°C
T
= 150°C
J
T
= 25°C
J
1
1
VDS = -10V
20µs PULSE WIDTH
V
= 0V
GS
A
0.1
0.1
7.0A
0.4
0.6
0.8
1.0
1.2
1.4
3.0
4.0
5.0
6.0
-V , Source-to-Drain Voltage (V)
SD
-VGS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
Fig 14. Typical Source-Drain Diode
ForwardVoltage
2.0
I
= -1.2A
D
1.5
1.0
0.5
0.0
V
= -10V
GS
A
-60 -40 -20
0
20 40
60 80 100 120 140 160
T
J
, Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Fig 16. Typical On-Resistance Vs. Drain
Vs.Temperature
Current
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5
IRF7509PbF
P - Channel
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
= 25 C
T
C
°
= 150 C
T
J
Single Pulse
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
Fig 17. Typical On-Resistance Vs. Gate
Fig 18. Maximum Safe Operating Area
Voltage
400
20
V
C
C
C
= 0V,
f = 1MHz
I
= -1.2A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
gd
V
= -24V
= -15V
DS
= C + C
ds
16
12
8
V
DS
300
200
100
0
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
0
2
4
6
8
10
12
1
10
100
-V , Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 20. Typical Gate Charge Vs.
Fig 19. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
N-P - Channel
1000
100
D = 0.50
0.20
0.10
10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2. Peak T =P
J
x
Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRF7509PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
INCHES
MILLIMETERS
DIM
A
D
MIN
.036
MAX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
MAX
1.11
0.20
0.36
0.18
3.05
3
- B -
D
8
D
D
D
D1 D1 D2 D2
A1 .004
8
1
7
6
5
4
7
6
5
B
C
D
e
.010
.005
.116
8
1
7
2
6
3
5
4
3
SINGLE
DUAL
H
E
0.25 (.010)
M
A
M
- A -
2
3
1
2
3
4
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
e1
E
H
L
S1 G1 S2 G2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
5.03
0.66
6°
e
θ
6X
e 1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
0.38
8X
A
( .015 )
- C -
B
0.10 (.004)
A 1
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B S
3.20
( .126 )
4.24
( .167 ) ( .208 )
5.28
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
E XAMPL E : T HIS IS AN IRF 7501
LOT CODE (XX)
PART NUMBER
DAT E CODE (YW) - S ee table below
Y = YEAR
W = WEE K
P = DE S IGNAT E S L E AD - F RE E
PRODUCT (OPTIONAL)
WW= (27-52) IF PRECEDED BY A LETTER
WORK
WW= (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
WE EK
W
YEAR
Y
WEEK
W
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
27
28
29
30
A
B
C
D
F
G
H
J
24
25
26
X
Y
Z
K
50
51
52
X
Y
Z
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7
IRF7509PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
8
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