IRGI4056DPBF [INFINEON]
Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO- 220, FULL PACK-3;
| 型号： | IRGI4056DPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 18A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO- 220, FULL PACK-3 局域网 栅 功率控制 晶体管 |
| 文件： | 总10页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97153
IRGI4060DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
C
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
Features
IC = 7.5A, TC = 100°C
tsc > 5µs, Tjmax = 150°C
VCE(on) typ. = 1.50V
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• 5μs SCSOA
G
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
E
n-channel
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
E
C
G
TO-220AB
Full-Pak
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Units
V
Max.
600
14
VCES
Collector-to-Emitter Breakdown Voltage
IC@ TC = 25°C
IC@ TC = 100°C
ICM
Continuous Collector Current
7.5
Continuous Collector Current
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
23
30
ILM
A
IF@TC=25°C
IF@TC=100°C
IFM
14
7.5
30
± 20
± 30
37
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
W
°C
VGE
PD @ TC =25°C
PD @ TC =100°C
15
TJ
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Min.
—
Typ.
—
Max.
3.40
6.10
—
Units
°C/W
g
RθJC
Rθ
—
—
JC
RθCS
Case-to-Sink, flat, greased surface
0.5
—
—
Junction-to-Ambient, typical socket mount
Rθ
65
—
JA
Wt
Weight
2.0
—
—
1
www.irf.com
4/17/09
IRGI4060DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V,Ic =100 μA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, Ic = 250 μA ( -55 -150 oC )
ΔV(BR)CES/ΔTJ
Temperature Coeff. of Breakdown Voltage
—
—
—
0.66
1.50
1.75
—
1.72
—
V/°C
IC = 7.5A, VGE = 15V, TJ = 25°C
VCE(on)
I
C = 7.5A, VGE = 15V, TJ = 125°C
IC = 7.5A, VGE = 15V, TJ = 150°C
CE = VGE, IC = 250 μA
Collector-to-Emitter Saturation Voltage
V
—
1.81
—
VGE(th)
V
Gate Threshold Voltage
4.0
6.5
V
VCE = VGE, IC = 1.0mA ( -55 -150 oC )
-12
ΔVGE(th)/ΔTJ
Threshold Voltage temp. coefficient
Forward Transconductance
—
—
—
—
—
25
mV/°C
S
μ
gfe
5
VCE = 50V, IC = 7.5A, PW =80 s
ICES
VGE = 0V,VCE = 600V
1.0
μA
Collector-to-Emitter Leakage Current
VGE = 0v, VCE = 600V, TJ =150°C
IF = 7.5A
400
2.18
—
—
—
μA
VFM
3.00
V
Diode Forward Voltage Drop
—
—
1.60
—
—
IF = 7.5A, TJ = 150°C
IGES
VGE = ± 20 V
Gate-to-Emitter Leakage Current
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 7.5A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
19
4.3
8.3
47
29
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
V
CC = 400V
GE = 15V
6
nC
μJ
ns
V
12
89
248
337
38
25
112
37
—
I
C = 7.5A, VCC = 400V, VGE = 15V
Ω
G = 47 , L=1mH, LS= 150nH, TJ = 25°C
R
141
188
29
Energy losses include tail and diode reverse recovery
I
C = 7.5A, VCC = 400V
Ω
G = 47 , L=1mH, LS= 150nH
16
R
td(off)
tf
101
28
TJ = 25°C
Turn-Off delay time
Fall time
Eon
Eoff
Etotal
td(on)
tr
I
C = 7.5A, VCC = 400V, VGE = 15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
107
196
304
28
Ω
G = 47 , L=1mH, LS= 150nH, TJ = 150°C
R
—
μJ
Energy losses include tail and diode reverse recovery
—
I
C = 7.5A, VCC = 400V
—
Ω
G = 47 , L=1mH, LS= 150nH
17
R
—
ns
td(off)
tf
118
53
TJ = 150°C
Turn-Off delay time
Fall time
—
—
Cies
Coes
Cres
VGE = 0V
Input Capacitance
537
47
—
pF
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
16
—
f = 1Mhz
TJ = 150°C, IC = 30A
VCC = 480V, Vp =600V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Ω
Rg = 47 , VGE = +20V to 0V
V
CC = 400V, Vp =600V
SCSOA
Erec
Short Circuit Safe Operating Area
5
—
—
—
μs
Ω
R
G = 47 , VGE = +15V to 0V
Reverse recovery energy of the diode
Diode Reverse recovery time
102
73
μJ
ns
A
TJ = 150oC
—
VCC = 400V, IF = 7.5A
trr
Irr
—
—
—
—
Ω
VGE = 15V, Rg = 47 , L=1mH, LS=150nH
Peak Reverse Recovery Current
11
Notes:
VCC = 80% (VCES), VGE = 20V, L = 28 μH, RG = 47 Ω
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C
Refer to AN-1086 for guidelines for measuring V(BR)CES safely
2
www.irf.com
IRGI4060DPbF
16
14
12
10
8
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10
1
10 μs
100 μs
1ms
DC
0.1
0.01
0
1
10
100
1000
10
100
(V)
1000
V
(V)
CE
V
CE
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VCE = 15V
Fig. 3 - Forward SOA,
TC = 25°C; TJ ≤ 150°C
28
24
20
16
12
8
28
24
20
16
12
8
V
V
V
V
V
= 18V
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
= 15V
= 12V
= 10V
= 8.0V
4
4
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp <60μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp < 60μs
www.irf.com
3
IRGI4060DPbF
28
24
20
16
12
8
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
-40°C
25°C
150°C
4
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
(V)
4.0
5.0
V
(V)
V
CE
F
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp < 60μs
Fig. 8 - Typ. Diode Forward Characteristics
tp < 60μs
14
14
12
10
8
12
10
8
I
I
I
= 3.8A
= 7.5A
= 15A
CE
CE
CE
I
I
I
= 3.8A
= 7.5A
= 15A
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
28
24
20
16
12
8
14
12
10
8
T = -40°C
J
T = 25°C
J
T
= 150°C
J
I
I
I
= 3.8A
= 7.5A
= 15A
CE
CE
CE
6
4
2
4
0
0
5
10
15
20
2
4
6
8
10
12
14
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp < 60μs
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
4
www.irf.com
IRGI4060DPbF
1000
100
10
400
300
200
100
0
E
OFF
td
OFF
t
F
E
ON
td
ON
t
R
1
0
4
8
12
16
0
4
8
12
16
I
(A)
C
I
(A)
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
240
1000
100
10
E
OFF
200
160
120
80
E
ON
td
OFF
t
F
td
t
ON
40
R
0
0
25
50
75
100
125
0
25
50
75
100
125
R
( )
Ω
R
(Ω)
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1mH; VCE = 400V, ICE = 7.5A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L=1mH; VCE= 400V
ICE= 7.5A; VGE= 15V
20
16
12
8
Ω
R
10
G =
16
12
8
Ω
Ω
R
R
22
G =
47
G =
Ω
100
R
G =
4
0
4
0
4
8
12
16
0
25
50
75
100
125
I
(A)
R
(
Ω)
F
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C
TJ = 150°C; IF = 7.5A
www.irf.com
5
IRGI4060DPbF
16
700
600
500
400
300
200
10
Ω
22
Ω
15A
47
Ω
100Ω
12
7.5A
8
3.8A
4
0
500
1000
0
500
di /dt (A/μs)
1000
di /dt (A/μs)
F
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 7.5A; TJ = 150°C
300
20
80
I
sc
15
10
5
T
200
100
0
sc
60
40
20
Ω
10
22 Ω
Ω
47
100Ω
0
0
4
8
12
16
8
9
10
11
12
(V)
13
14
15
16
V
GE
I
(A)
F
Fig. 22- Typ. VGE vs Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 150°C
1000
100
10
16
Cies
300V
400V
14
12
10
8
Coes
Cres
6
4
2
0
1
0
4
8
12
16
20
0
100
200
300
(V)
400
500
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 7.5A, L=600μH
VGE= 0V; f = 1MHz
6
www.irf.com
IRGI4060DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
τι
Ri (°C/W)
(sec)
τ
J τJ
τ
τ
Cτ
0.1
0.813883 0.000438
0.907622 0.044572
1.679598 2.1542
0.02
0.01
τ
1 τ1
τ
2 τ2
3 τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
τι
Ri (°C/W)
(sec)
0.02
0.01
τJ
0.433397 0.000095
τC
0.1
τJ
τ1
τ
1.635087 0.001553
τ
τ
3 τ3
τ4
2 τ2
τ1
τ4
1.4856
2.547074
0.05426
2.646
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
www.irf.com
7
IRGI4060DPbF
L
L
VCC
80 V
+
-
DUT
DUT
0
V
CC
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
VCC
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C fo rce
100K
D1
22K
C sen se
E sense
0.0075μ
G force
DUT
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
8
www.irf.com
IRGI4060DPbF
400
350
300
250
200
150
100
50
16
550
500
450
400
350
300
250
200
150
100
50
10
9
14
8
TEST CURRENT
12
7
tr
10
8
6
5
4
6
3
90% test current
90% ICE
2
4
10% test current
1
5% VCE
90% VCE
5% ICE
2
0
0
0
0
-1
-2
Eon Loss
-2
Eoff Loss
-50
-50
-0.2
0
0.2
0.4
0.6
-0.1
0
0.1
time(μs)
time (μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
500
120
100
80
60
40
20
0
50
0
10
450
400
350
300
250
200
150
100
50
VCE
-50
5
-100
-150
-200
-250
-300
-350
-400
-450
t
0
ICE
-5
Peak
IRR
10%
Peak
IRR
-10
-15
0
-20
-10
-5
0
5
-0.10 0.00 0.10 0.20 0.30
Time (µs)
time (μS)
WF.3- Typ. Reverse Recovery Waveform
@ TJ = 150°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
www.irf.com
9
IRGI4060DPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAMPLE: THIS IS AN IRFI840G
WIT H AS S E MB LY
PART NUMBER
LOT CODE 3432
ASSEMBLED ON WW 24, 2001
IN THE ASSEMBLY LINE "K"
INTERNATIONAL
RECTIFIER
LOGO
IRFI840G
124K
34
32
DATE CODE
YEAR 1 = 2001
WEE K 24
AS S E MB LY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-F ree"
LINE K
TO-220 Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 4/09
10
www.irf.com
相关型号：
IRGI4061DPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INFINEON
©2020 ICPDF网 联系我们和版权申明