IRGI4064DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGI4064DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97397A
IRGI4064DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• 5 µS short circuit SOA
• SquareRBSOA
VCES = 600V
IC = 8.0A, TC = 100°C
• 100% of the parts tested for ILM
G
tSC ≥ 5µs, TJ(max) = 150°C
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tightparameterdistribution
E
VCE(on) typ. = 1.51V
n-channel
• LeadFreePackage
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
E
C
G
TO-220
Full-Pak
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
600
V
VCES
Continuous Collector Current
15
8.0
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
ICM
ILM
24
32
A
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
15
IF @ TC = 25°C
8.0
IF @ TC = 100°C
32
IFM
±20
±30
38
V
VGE
W
PD @ TC = 25°C
Maximum Power Dissipation
15
PD @ TC = 100°C
Operating Junction and
-55 to +150
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
Max.
3.29
6.1
Units
Rθ (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
°C/W
JC
Rθ (Diode)
JC
–––
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
0.50
–––
–––
65
CS
Rθ
JA
1
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10/01/09
IRGI4064DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
GE = 0V, IC = 100µA
V(BR)CES
V
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.52
1.51
1.73
1.80
—
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 100µA (-55°C-150°C)
IC = 8.0A, VGE = 15V, TJ = 25°C
IC = 8.0A, VGE = 15V, TJ = 125°C
IC = 8.0A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 275µA
CT6
Temperature Coeff. of Breakdown Voltage
—
V/°C
5,6,7
1.80
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
9,10,11
—
Gate Threshold Voltage
6.5
—
V
mV/°C
S
9, 10,
∆
∆
VGE(th)/ TJ
V
CE = VGE, IC = 1.0mA (-55°C - 150°C)
VCE = 50V, IC = 8.0A, PW = 60µs
VGE = 0V, VCE = 600V
11, 12
Threshold Voltage temp. coefficient
Forward Transconductance
-12
6.5
gfe
—
ICES
Collector-to-Emitter Leakage Current
—
20
µA
VGE = 0V, VCE = 600V, TJ = 150°C
IF = 8.0A
—
250
3.1
—
VFM
IGES
8
Diode Forward Voltage Drop
2.23
1.64
—
V
IF = 8.0A, TJ = 150°C
V
GE = ±20V
Gate-to-Emitter Leakage Current
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
24
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 8.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
21
4.8
8.6
20
32
7.2
13
25
137
162
38
17
90
23
—
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
CT1
nC
µJ
ns
V
CC = 400V
IC = 8.0A, VCC = 400V, VGE = 15V
CT4
CT4
Ω
RG = 22 , L = 1.0mH, TJ = 25°C
125
145
29
Energy losses include tail & diode reverse recovery
IC = 8.0A, VCC = 400V, VGE = 15V
R
G = 22Ω, L = 1.0mH, TJ = 25°C
12
td(off)
tf
Turn-Off delay time
Fall time
84
18
Eon
Eoff
Etotal
td(on)
tr
IC = 8.0A, VCC = 400V, VGE=15V
RG=22Ω, L=1.0mH, TJ = 150°C
13, 15
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
51
205
256
28
—
µJ
ns
pF
Energy losses include tail & diode reverse recovery
WF1, WF2
14, 16
CT4
—
IC = 8.0A, VCC = 400V, VGE = 15V
—
Ω
RG = 22 , L = 1.0mH
12
—
td(off)
tf
TJ = 150°C
WF1
Turn-Off delay time
Fall time
101
27
—
WF2
—
Cies
Coes
Cres
VGE = 0V
23
Input Capacitance
600
45
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
16
—
f = 1.0Mhz
TJ = 150°C, IC = 32A
4
V
CC = 480V, Vp =600V
CT2
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Ω
Rg = 90 , VGE = +20V to 0V
V
CC = 400V, Vp =600V
22, CT3
WF4
5
—
—
µs
Ω
Rg = 90 , VGE = +15V to 0V
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
147
48
—
—
—
µJ
ns
A
17, 18, 19
20, 21
WF3
V
CC = 400V, IF = 8.0A
Ω
VGE = 15V, Rg = 22 , L = 1.0mH
Irr
Peak Reverse Recovery Current
14
Notes:
VCC = 80% (VCES), VGE = 20V, L = 28µH, RG = 90Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGI4064DPbF
16
14
12
10
8
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
T
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10µsec
100µsec
10
10
1msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
1
10
100
1000
10
100
(V)
1000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGI4064DPbF
60
70
60
50
40
30
20
10
0
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
50
40
30
20
10
0
-40°c
25°C
150°C
0
1
2
3
4
5
6
7
8
9
10
0.0
1.0
2.0
3.0
(V)
4.0
5.0
V
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs
tp = 80µs
18
16
14
12
18
16
14
12
I
I
I
= 3.7A
= 8.0A
= 15A
I
I
I
= 3.7A
= 8.0A
= 15A
CE
CE
CE
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
18
16
14
12
10
8
50
40
30
20
10
0
T
= -40°C
= 25°C
J
T
J
T
= 150°C
I
I
I
= 3.7A
J
CE
CE
CE
= 8.0A
= 15A
6
4
2
0
5
10
15
20
2
4
6
8
10
(V)
12
14
16
V
(V)
V
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 10µs
TJ = 150°C
V
4
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IRGI4064DPbF
400
350
300
250
200
150
100
50
1000
100
10
E
OFF
td
OFF
t
F
td
ON
E
ON
t
R
0
1
2
4
6
8
I
10
(A)
12
14
16
2
4
6
8
10
(A)
12
14
16
I
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 400V, RG = 22Ω; VGE = 15V
TJ = 150°C; L = 1.0mH; VCE = 400V, RG = 22Ω; VGE = 15V
300
1000
250
200
150
100
50
E
OFF
td
OFF
100
td
ON
E
ON
t
F
t
R
0
10
0
20
40
60
80
100
0
20
40
60
(Ω)
80
100
R
G
Ω
Rg (
)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1.0mH; VCE = 400V, ICE = 8.0A; VGE = 15V
TJ = 150°C; L = 1.0mH; VCE = 400V, ICE = 8.0A; VGE = 15V
20
16
R
10Ω
G =
18
16
14
12
10
8
14
12
10
8
R
22Ω
G =
R
47Ω
G =
Ω
R
100
G =
6
4
6
2
4
6
8
10
(A)
12
14
16
0
25
50
(
75
100
I
Ω)
R
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
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5
IRGI4064DPbF
16
600
500
400
300
200
14
12
10
8
15A
10Ω
22Ω
47Ω
7.8A
100Ω
3.8A
600
6
0
200
400
800 1000 1200
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode QRR vs. diF/dt
Fig. 19 - Typ. Diode IRR vs. diF/dt
V
CC = 400V; VGE = 15V; TJ = 150°C
VCC = 400V; VGE = 15V; IF = 8.0A; TJ = 150°C
100
80
60
40
20
0
18
16
14
12
10
8
250
Ω
R
= 10
G
T
200
150
100
50
sc
I
sc
Ω
R
= 22
G
Ω
R
= 47
G
G
Ω
R
= 100
12
6
4
0
8
10
12
14
(V)
16
18
2
4
6
8
10
(A)
14
16
I
V
GE
F
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 150°C
1000
100
10
16
14
12
10
8
Cies
V
V
= 300V
= 480V
CES
CES
Coes
Cres
6
4
2
1
0
0
50 100 150 200 250 300 350 400
(V)
0
2
4
6
8
10 12 14 16 18 20 22
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 8.0A; L = 1900µH
VGE= 0V; f = 1MHz
6
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IRGI4064DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.02
0.01
0.3188
0.5528
1.0389
1.3807
0.000064
0.000607
0.032948
0.9865
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.1
0.4072
1.9745
1.7918
1.9280
0.000069
0.001087
0.021611
1.5076
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGI4064DPbF
L
L
80 V
VCC
DUT
DUT
480V
0
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4x
- 5V
DC
400V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
C fo rce
100K
D1
22K
C sen se
E sense
DUT
VCC
0.0075µ
G force
Rg
DUT
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
8
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IRGI4064DPbF
500
400
300
200
100
0
25
500
400
300
200
100
0
25
20
15
10
5
tf
tr
20
TEST CURRENT
15
90% test current
10% test current
10
90% ICE
5%
VCE
5
5% VCE
5% ICE
0
0
Eon Loss
-5
Eof f Loss
-100
-100
-5
-0.1
0.1
-0.2
0
0.2
0.4
0.6
0.8
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
600
100
100
0
20
15
10
5
QRR
ICE
500
400
300
200
100
0
80
60
40
20
0
tRR
VCE
-100
-200
-300
-400
-500
-600
10%
Peak IRR
0
-5
Peak
IRR
-10
-15
-20
-5
0
5
10
-0.05
0.00
0.05
0.10
0.15
Time (uS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 150°C using Fig. CT.4
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9
IRGI4064DPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
TO-220 Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/09
10
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相关型号：
IRGIB15B60KD1PPBF
Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3
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