IRGI4065PBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT
| 型号： | IRGI4065PBF |
| 厂家： | 
Infineon |
| 描述： | PDP TRENCH IGBT |
| 文件： | 总7页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97187
IRGI4065PbF
Key Parameters
PDP TRENCH IGBT
Features
VCE min
300
1.25
170
150
V
V
A
°C
l
Advanced Trench IGBT Technology
VCE(ON) typ. @ IC = 28A
IRP max @ TC= 25°C
TJ max
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
l
l
High repetitive peak current capability
Lead Free package
C
E
C
G
G
TO-220AB
Full-Pak
E
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
28
A
14
170
39
W
16
Power Dissipation
0.31
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
d
Typ.
–––
Max.
3.20
Units
°C/W
RθJC
Junction-to-Case
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1
02/17/06
IRGI4065PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1 mA
Parameter
Min. Typ. Max. Units
BVCES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltagee
Breakdown Voltage Temp. Coefficient
300
–––
–––
–––
–––
–––
V
VGE = 0V, ICE = 1 A
V(BR)ECS
18
–––
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 15A e
VGE = 15V, ICE = 28A e
∆ΒVCES/∆TJ
–––
–––
–––
–––
–––
–––
2.6
0.23
1.05
V/°C
V
1.25 1.45
V
VCE(on)
VGE = 15V, ICE = 70A e
Static Collector-to-Emitter Voltage
1.75
2.25
2.75
–––
-12
2.0
50
–––
–––
–––
5.0
V
VGE = 15V, ICE = 110A e
VGE = 15V, ICE = 110A, TJ = 150°C e
VCE = VGE, ICE = 0.5mA
V
V
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
100
––– mV/°C
VCE = 300V, VGE = 0V
25
–––
100
-100
–––
–––
–––
–––
µA
VCE = 300V, VGE = 0V, TJ = 150°C
VGE = 30V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
–––
–––
26
nA
VGE = -30V
VCE = 25V, ICE = 25A
gfe
Qg
Qgc
tst
S
VCE = 200V, IC = 25A, VGE = 15Ve
62
nC
Gate-to-Collector Charge
20
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40µF, VGE = 15V
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
875
975
–––
–––
EPULSE
Energy per Pulse
V
CC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
CE = 30V
Ciss
Coss
Crss
LC
Input Capacitance
––– 2200 –––
V
Output Capacitance
–––
–––
–––
110
55
–––
–––
–––
pF
ƒ = 1.0MHz,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
5.0
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13
–––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.10, ton=2µsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRGI4065PbF
280
240
200
160
120
80
280
240
200
160
120
80
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
BOTTOM
V
BOTTOM
V
GE
GE
40
40
0
0
0
2
4
6
8
10 12 14 16
(V)
0
2
4
6
8
10 12 14 16
(V)
V
V
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
360
280
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
TOP
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
V
V
320
280
240
200
160
120
80
GE
GE
240
200
160
120
80
V
V
GE
GE
V
V
GE
GE
V
V
GE
GE
BOTTOM
V
BOTTOM
V
GE
GE
40
40
0
0
0
2
4
6
8
10 12 14 16
(V)
0
2
4
6
8
10 12 14 16
(V)
V
V
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
600
500
20
I
= 25A
C
15
10
5
400
300
200
100
0
T
= 25°C
J
T
T
= 25°C
T
= 125°C
J
J
J
= 150°C
0
0
5
10
15
20
0
5
10
15
20
V
, Gate-to-Emitter Voltage (V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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IRGI4065PbF
30
180
160
140
120
100
80
ton= 2µs
Duty cycle <= 0.10
Half Sine Wave
25
20
15
10
5
60
40
20
0
0
0
25
50
75
100
125
150
25
50
75
100
125
150
Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1000
1000
V
= 240V
L = 220nH
C = 0.4µF
CC
900
800
700
600
500
400
300
200
L = 220nH
C = variable
900
800
700
600
500
400
100°C
100°C
25°C
25°C
160 170 180 190 200 210 220 230
150 160 170 180 190 200 210 220 230 240
Collector-to-Emitter Voltage (V)
I , Peak Collector Current (A)
C
V
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1400
1000
V
= 240V
CC
OPERATION IN THIS AREA
L = 220nH
t = 1µs half sine
1200
1000
800
LIMITED BY V (on)
CE
C= 0.4µF
100
10µsec
C= 0.3µF
C= 0.2µF
100µsec
600
10
400
200
1
25
50
75
100
125
150
1
10
100
1000
T , Temperature (ºC)
V
(V)
J
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRGI4065PbF
100000
10000
1000
100
25
20
15
10
5
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
I
= 25A
C
C
C
C
SHORTED
ies
res
oes
ge
gd
ce
= C
gc
= C + C
ce
gc
V
V
V
= 240V
CE
CE
CE
= 200V
= 150V
Cies
Coes
Cres
0
10
0
10 20 30 40 50 60 70 80
, Total Gate Charge (nC)
0
50
100
150
200
250
300
Q
G
V
, Collector-toEmitter-Voltage(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
0.02
0.01
Ri (°C/W) τi (sec)
τ
JτJ
τ
Cτ
0.533
1.163
1.504
0.000938
0.140118
2.477
τ
τ
1τ1
τ
2 τ2
3τ3
0.01
0.001
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGI4065PbF
A
RG
C
PULSEA
PULSEB
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRGI4065PbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification to
all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational performance
or safety. Please contact your IR representative if you have
specific design or use requirements or for further information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/06
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INFINEON
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