IRGI4061DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 超快软恢复DIODEINSULATED栅双极晶体管绝缘栅双极晶体管超快软恢复二极管
| 型号： | IRGI4061DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总10页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97114
IRGI4061DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
C
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
IC = 11A, TC = 100°C
tsc > 5µs, Tjmax = 150°C
VCE(on) typ. = 1.35V
G
E
n-channel
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
E
C
G
TO-220AB
Full-Pak
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
600
20
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC@ TC = 25°C
IC@ TC = 100°C
ICM
11
40
Clamped Inductive Load Current c
ILM
40
A
IF@TC=25°C
IF@TC=100°C
IFM
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
20
11
40
± 20
± 30
43
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
VGE
PD @ TC =25°C
W
°C
PD @ TC =100°C
17
TJ
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Min.
—
Typ.
—
Max.
2.90
4.60
—
Units
°C/W
g
RθJC
RθJC
RθCS
RθJA
Wt
—
—
Case-to-Sink, flat, greased surface
—
0.5
—
Junction-to-Ambient, typical socket mount e
—
65
Weight
—
2.0
—
1
www.irf.com
2/14/07
IRGI4061DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
600
—
Typ. Max. Units
Conditions
GE = 0V,Ic =100 µA
GE = 0V, Ic = 250 µA ( -55 -150 oC )
V
V
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
—
—
—
V
∆V(BR)CES/∆TJ
0.75
1.35
1.53
1.58
V/°C
I
I
I
C = 11A, VGE = 15V, TJ = 25°C
C = 11A, VGE = 15V, TJ = 125°C
C = 11A, VGE = 15V, TJ = 150°C
—
1.59
—
VCE(on)
V
Collector-to-Emitter Saturation Voltage
—
—
—
VGE(th)
VCE = VGE, IC = 500 µA
VCE = VGE, IC = 1.0mA ( 25 -150 oC )
Gate Threshold Voltage
4.0
—
6.5
—
V
mV/°C
S
-15
11
∆VGE(th)/∆TJ
gfe
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 11A, PW =80µs
—
—
ICES
VGE = 0V,VCE = 600V
—
2.0
25
µA
Collector-to-Emitter Leakage Current
VGE = 0v, VCE = 600V, TJ =150°C
IF = 11A
550
1.84
1.33
—
—
—
µA
VFM
—
2.05
—
V
Diode Forward Voltage Drop
IF = 11A, TJ = 150°C
—
IGES
VGE = ± 20 V
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
Qg
35
8.0
13
53
12
23
95
340
435
46
26
129
41
—
IC = 11A
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
nC
µJ
ns
VCC = 400V
VGE = 15V
52
IC = 11A, VCC = 400V, VGE = 15V
RG = 22Ω, L=1mH, LS= 150nH, TJ = 25°C
Energy losses include tail and diode reverse recovery
IC = 11A, VCC = 400V
231
283
37
18
RG = 22Ω, L=1mH, LS= 150nH
TJ = 25°C
111
30
td(off)
tf
Turn-Off delay time
Fall time
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
143
316
459
35
IC = 11A, VCC = 400V, VGE = 15V
RG = 22Ω, L=1mH, LS= 150nH, TJ = 150°C
Energy losses include tail and diode reverse recovery
IC = 11A, VCC = 400V
—
µJ
ns
—
—
19
—
RG = 22Ω, L=1mH, LS= 150nH
TJ = 150°C
134
45
td(off)
tf
Turn-Off delay time
Fall time
—
—
Cies
Coes
Cres
Input Capacitance
1050
89
—
VGE = 0V
pF
Output Capacitance
Reverse Transfer Capacitance
—
VCC = 30V
30
—
f = 1Mhz
TJ = 150°C, IC = 40A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
CC = 480V, Vp =600V
Rg = 22Ω, VGE = +15V to 0V
CC = 400V, Vp =600V
G = 22Ω, VGE = +15V to 0V
TJ = 150oC
CC = 400V, IF = 11A
VGE = 15V, Rg = 22Ω, L=1mH, LS=150nH
V
SCSOA
Short Circuit Safe Operating Area
5
—
—
µs
R
Erec
trr
Reverse recovery energy of the diode
Diode Reverse recovery time
211
60
µJ
ns
A
—
—
—
—
—
—
V
Irr
Peak Reverse Recovery Current
18
Notes:
VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C
Refer to AN-1086 for guidelines for measuring V(BR)CES safely
2
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IRGI4061DPbF
24
20
16
12
8
50
40
30
20
10
0
4
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10 µs
100 µs
10
1ms
1
DC
0.1
0.01
0
1
10
100
1000
10
100
(V)
1000
V
(V)
CE
V
CE
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VCE = 15V
Fig. 3 - Forward SOA,
TC = 25°C; TJ ≤ 150°C
40
30
20
10
0
40
30
20
10
0
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
0
2
4
6
8
0
2
4
6
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp <60µs
TJ = 25°C; tp < 60µs
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3
IRGI4061DPbF
60
50
40
30
20
10
0
40
-40°C
25°C
150°C
30
20
10
0
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0
1.0
2.0
(V)
3.0
4.0
0
2
4
6
8
V
V
(V)
F
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp < 60µs
tp < 60µs
14
14
12
10
8
12
10
8
I
I
I
= 5.5A
= 11A
= 22A
I
I
I
= 5.5A
= 11A
= 22A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
40
30
20
10
0
14
12
10
8
I
I
I
= 5.5A
= 11A
= 22A
CE
CE
CE
6
T
= -40°C
= 25°C
J
4
T
J
T
= 150°C
J
2
0
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp < 60µs
TJ = 150°C
4
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IRGI4061DPbF
1000
100
10
700
600
500
400
300
200
100
0
td
td
OFF
E
OFF
t
F
ON
t
R
E
ON
1
0
4
8
12
(A)
16
20
24
0
4
8
12
(A)
16
20
24
I
C
I
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1mH; VCE= 400V
RG= 22Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1mH; VCE = 400V, RG = 22Ω; VGE = 15V.
500
1000
100
10
E
OFF
400
td
OFF
E
ON
300
200
100
0
td
t
ON
R
t
F
0
25
50
75
100
125
0
25
50
75
100
125
R
(Ω)
R
(Ω)
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1mH; VCE = 400V, ICE = 11A; VGE = 15V
Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L=1mH; VCE= 400V
ICE= 11A; VGE= 15V
24
24
20
16
12
8
R
10 Ω
G =
20
16
12
8
R
22 Ω
G =
R
47 Ω
G =
R
100Ω
G =
4
0
4
0
4
8
12
(A)
16
20
24
0
25
50
75
100
125
I
F
R
(
Ω)
G
Fig. 17 - Typical Diode IRR vs. IF
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C
TJ = 150°C; IF = 11A
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5
IRGI4061DPbF
1100
1000
900
800
700
600
500
400
300
24
10Ω
22Ω
22A
20
16
12
8
47 Ω
11A
100Ω
5.5A
0
600
di /dt (A/µs)
1200
0
500
1000
F
di /dt (A/µs)
Fig. 19- Typical DFiode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 150°C
ICE= 11A; TJ = 150°C
400
18
160
16
14
12
10
8
140
120
100
80
300
200
100
0
10 Ω
22 Ω
47 Ω
100 Ω
60
6
4
40
0
4
8
12
(A)
16
20
24
8
10
12
14
(V)
16
18
V
GE
I
F
Fig. 22- Typ. VGE vs Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 150°C
10000
1000
100
10
16
14
300V
400V
Cies
12
10
8
6
Coes
Cres
4
2
0
1
0
10
20
30
40
0
100
200
300
(V)
400
500
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 11A, L=600µH
6
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IRGI4061DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τι (sec)
0.203729 0.000093
0.311882 0.000764
1.09536 0.051077
0.1
τJ
τC
τJ
τ1
0.02
0.01
τ
τ
τ
3 τ3
τ4
2τ2
τ1
τ4
Ci= τi/Ri
1.289029
0.996
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τι (sec)
0.265329 0.000056
1.150721 0.001322
1.326646 0.031959
1.857304 1.6697
0.1
τJ
τC
τJ
τ1
τ
τ
τ
3τ3
τ4
2τ2
τ1
τ4
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGI4061DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
8
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IRGI4061DPbF
500
400
300
200
100
0
50
600
500
400
300
200
100
0
30
25
20
15
10
5
tf
40
TEST
tr
90% test current
10% test current
30
90% ICE
20
5% VCE
10% ICE
10
5% VCE
0
0
Eon Loss
Eoff Loss
-100
-5
-100
-10
-0.15
0.05
0.25
0.45
-0.1
-0.05
0
0.05
0.1
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
100
0
20
500
250
200
150
100
50
15
10
5
VCE
QRR
400
300
200
100
0
-100
-200
-300
-400
-500
-600
-700
-800
-900
tRR
IC
0
-5
Peak
IRR
-10
-15
-20
-25
-30
10%
Peak
IRR
0
-100
-50
-4 -2
0
2
4
6
8
10
-0.10
0.00
0.10
0.20
Time (uS)
time (µS)
WF.3- Typ. Reverse Recovery Waveform
@ TJ = 150°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
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9
IRGI4061DPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAMPLE: THIS IS AN IRFI840G
WITH ASSEMBLY
PART NUMBER
LOT CODE 3432
ASSEMBLED ON WW 24, 2001
IN THE ASSEMBLY LINE "K"
INTERNATIONAL
RECTIFIER
LOGO
IRFI840G
124K
34
32
DATE CODE
YEAR 1 = 2001
WEEK 24
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-F ree"
LINE K
TO-220 Full-Pak package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/07
10
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相关型号：
IRGIB15B60KD1PPBF
Insulated Gate Bipolar Transistor, 19A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, FULL PACK-3
INFINEON
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